DE69216021D1 - Flüchtige Vorläufer zur chemischen Dampfphasenabscheidung von Kupfer - Google Patents
Flüchtige Vorläufer zur chemischen Dampfphasenabscheidung von KupferInfo
- Publication number
- DE69216021D1 DE69216021D1 DE69216021T DE69216021T DE69216021D1 DE 69216021 D1 DE69216021 D1 DE 69216021D1 DE 69216021 T DE69216021 T DE 69216021T DE 69216021 T DE69216021 T DE 69216021T DE 69216021 D1 DE69216021 D1 DE 69216021D1
- Authority
- DE
- Germany
- Prior art keywords
- copper
- vapor deposition
- chemical vapor
- volatile precursors
- precursors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title 1
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 229910052802 copper Inorganic materials 0.000 title 1
- 239000010949 copper Substances 0.000 title 1
- 239000002243 precursor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/08—Copper compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0803—Compounds with Si-C or Si-Si linkages
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/764,566 US5187300A (en) | 1991-02-04 | 1991-09-20 | Volatile precursors for copper CVD |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69216021D1 true DE69216021D1 (de) | 1997-01-30 |
DE69216021T2 DE69216021T2 (de) | 1997-04-10 |
Family
ID=25071089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69216021T Expired - Fee Related DE69216021T2 (de) | 1991-09-20 | 1992-09-11 | Flüchtige Vorläufer zur chemischen Dampfphasenabscheidung von Kupfer |
Country Status (5)
Country | Link |
---|---|
US (1) | US5187300A (de) |
EP (1) | EP0533070B1 (de) |
JP (1) | JPH0649944B2 (de) |
KR (1) | KR950004895B1 (de) |
DE (1) | DE69216021T2 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5442235A (en) * | 1993-12-23 | 1995-08-15 | Motorola Inc. | Semiconductor device having an improved metal interconnect structure |
JP2622671B2 (ja) * | 1995-03-07 | 1997-06-18 | 株式会社トリケミカル研究所 | 銅のβ−ジケトネート錯体の製造方法 |
KR100225686B1 (ko) * | 1995-03-20 | 1999-10-15 | 모리시다 요이치치 | 막형성용 재료 및 배선형성방법 |
AT402932B (de) * | 1995-12-22 | 1997-09-25 | Chemiefaser Lenzing Ag | Celluloseschwamm und verfahren zu dessen herstellung |
US6090960A (en) * | 1997-01-07 | 2000-07-18 | Sharp Laboratories Of America, Inc. | Precursor with (methoxy) (methyl) silylolefin ligand to deposit copper and method same |
US5767301A (en) * | 1997-01-21 | 1998-06-16 | Sharp Microelectronics Technology, Inc. | Precursor with (alkyloxy)(alkyl)-silylolefin ligand to deposit copper |
FR2760743B1 (fr) | 1997-03-13 | 1999-07-23 | Centre Nat Rech Scient | Nouveaux precurseurs de cuivre(i) pour depot chimique en phase gazeuse de cuivre metallique |
US6130161A (en) | 1997-05-30 | 2000-10-10 | International Business Machines Corporation | Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity |
US6069068A (en) * | 1997-05-30 | 2000-05-30 | International Business Machines Corporation | Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity |
JP3334605B2 (ja) * | 1998-05-07 | 2002-10-15 | 三菱電機株式会社 | 電極形成用cvd原料、およびそれを用いて形成されたキャパシタ用電極、配線膜 |
US6102993A (en) * | 1998-08-03 | 2000-08-15 | Advanced Technology Materials, Inc. | Copper precursor composition and process for manufacture of microelectronic device structures |
US6037001A (en) * | 1998-09-18 | 2000-03-14 | Gelest, Inc. | Method for the chemical vapor deposition of copper-based films |
US6066196A (en) * | 1998-09-18 | 2000-05-23 | Gelest, Inc. | Method for the chemical vapor deposition of copper-based films and copper source precursors for the same |
US6204176B1 (en) * | 1998-11-10 | 2001-03-20 | Sharp Laboratories Of America, Inc. | Substituted phenylethylene precursor deposition method |
US7012292B1 (en) * | 1998-11-25 | 2006-03-14 | Advanced Technology Materials, Inc | Oxidative top electrode deposition process, and microelectronic device structure |
US6046364A (en) * | 1998-12-07 | 2000-04-04 | Air Products And Chemicals, Inc. | Regeneration of metal CVD precursors |
DE10080457T1 (de) * | 1999-02-12 | 2001-04-26 | Gelest Inc | CVD-Abscheidung von Wolframnitrid |
KR100298125B1 (ko) * | 1999-04-15 | 2001-09-13 | 정명식 | 구리의 화학 증착에 유용한 유기 구리 전구체 |
US6184403B1 (en) * | 1999-05-19 | 2001-02-06 | Research Foundation Of State University Of New York | MOCVD precursors based on organometalloid ligands |
JP2002128787A (ja) * | 1999-12-15 | 2002-05-09 | Mitsubishi Materials Corp | 有機銅化合物及び該化合物を含む混合液並びにそれを用いて作製された銅薄膜 |
US6589329B1 (en) | 2000-03-09 | 2003-07-08 | Advanced Technology Materials, Inc. | Composition and process for production of copper circuitry in microelectronic device structures |
US6642401B2 (en) | 2000-03-14 | 2003-11-04 | Nissan Chemical Industries, Ltd. | β-diketonatocopper(I) complex containing allene compounds as ligand and process for producing the same |
KR100382533B1 (ko) * | 2000-12-13 | 2003-05-09 | 삼성전자주식회사 | 리간드 및 그를 이용한 유기금속 전구체 |
KR100382534B1 (ko) * | 2000-12-13 | 2003-05-09 | 삼성전자주식회사 | 리간드 및 그에 의한 유기금속 전구체 |
US7084080B2 (en) * | 2001-03-30 | 2006-08-01 | Advanced Technology Materials, Inc. | Silicon source reagent compositions, and method of making and using same for microelectronic device structure |
US6534666B1 (en) | 2001-12-27 | 2003-03-18 | Air Products And Chemicals, Inc. | Use of water and acidic water to purify liquid MOCVD precursors |
US6838573B1 (en) | 2004-01-30 | 2005-01-04 | Air Products And Chemicals, Inc. | Copper CVD precursors with enhanced adhesion properties |
US7166732B2 (en) * | 2004-06-16 | 2007-01-23 | Advanced Technology Materials, Inc. | Copper (I) compounds useful as deposition precursors of copper thin films |
US9312557B2 (en) * | 2005-05-11 | 2016-04-12 | Schlumberger Technology Corporation | Fuel cell apparatus and method for downhole power systems |
WO2007142700A1 (en) * | 2006-06-02 | 2007-12-13 | Advanced Technology Materials, Inc. | Copper (i) amidinates and guanidinates for forming copper thin films |
WO2008069821A1 (en) * | 2006-12-05 | 2008-06-12 | Advanced Technology Materials, Inc. | Metal aminotroponiminates, bis-oxazolinates and guanidinates |
US7750173B2 (en) * | 2007-01-18 | 2010-07-06 | Advanced Technology Materials, Inc. | Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films |
KR20100063797A (ko) | 2007-09-17 | 2010-06-11 | 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 금속 함유 필름의 증착을 위한 중성 리간드 함유 전구체 및 방법 |
US20100047988A1 (en) * | 2008-08-19 | 2010-02-25 | Youn-Joung Cho | Methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor |
US8563085B2 (en) | 2009-08-18 | 2013-10-22 | Samsung Electronics Co., Ltd. | Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor |
US20110045183A1 (en) * | 2009-08-18 | 2011-02-24 | Youn-Joung Cho | Methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3356527A (en) * | 1964-04-23 | 1967-12-05 | Ross W Moshier | Vapor-plating metals from fluorocarbon keto metal compounds |
US3594216A (en) * | 1969-06-19 | 1971-07-20 | Westinghouse Electric Corp | Vapor phase deposition of metal from a metal-organic beta-ketoamine chelate |
US4425281A (en) * | 1981-07-13 | 1984-01-10 | Exxon Research And Engineering Co. | Copper or silver complexes with fluorinated diketones and unsaturated ligands |
CA1178290A (en) * | 1981-07-13 | 1984-11-20 | Gerald Doyle | Copper or silver complexes with fluorinated diketonates and unsaturated hydrocarbons |
US5085731A (en) * | 1991-02-04 | 1992-02-04 | Air Products And Chemicals, Inc. | Volatile liquid precursors for the chemical vapor deposition of copper |
-
1991
- 1991-09-20 US US07/764,566 patent/US5187300A/en not_active Expired - Lifetime
-
1992
- 1992-09-11 EP EP92115593A patent/EP0533070B1/de not_active Expired - Lifetime
- 1992-09-11 DE DE69216021T patent/DE69216021T2/de not_active Expired - Fee Related
- 1992-09-18 KR KR1019920016973A patent/KR950004895B1/ko not_active IP Right Cessation
- 1992-09-18 JP JP4275200A patent/JPH0649944B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5187300A (en) | 1993-02-16 |
KR950004895B1 (ko) | 1995-05-15 |
EP0533070A2 (de) | 1993-03-24 |
JPH0649944B2 (ja) | 1994-06-29 |
DE69216021T2 (de) | 1997-04-10 |
KR930006038A (ko) | 1993-04-20 |
JPH05202476A (ja) | 1993-08-10 |
EP0533070A3 (en) | 1994-11-02 |
EP0533070B1 (de) | 1996-12-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |