DE69216021D1 - Flüchtige Vorläufer zur chemischen Dampfphasenabscheidung von Kupfer - Google Patents

Flüchtige Vorläufer zur chemischen Dampfphasenabscheidung von Kupfer

Info

Publication number
DE69216021D1
DE69216021D1 DE69216021T DE69216021T DE69216021D1 DE 69216021 D1 DE69216021 D1 DE 69216021D1 DE 69216021 T DE69216021 T DE 69216021T DE 69216021 T DE69216021 T DE 69216021T DE 69216021 D1 DE69216021 D1 DE 69216021D1
Authority
DE
Germany
Prior art keywords
copper
vapor deposition
chemical vapor
volatile precursors
precursors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69216021T
Other languages
English (en)
Other versions
DE69216021T2 (de
Inventor
John Anthony Thomas Norman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Publication of DE69216021D1 publication Critical patent/DE69216021D1/de
Application granted granted Critical
Publication of DE69216021T2 publication Critical patent/DE69216021T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0803—Compounds with Si-C or Si-Si linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE69216021T 1991-09-20 1992-09-11 Flüchtige Vorläufer zur chemischen Dampfphasenabscheidung von Kupfer Expired - Fee Related DE69216021T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/764,566 US5187300A (en) 1991-02-04 1991-09-20 Volatile precursors for copper CVD

Publications (2)

Publication Number Publication Date
DE69216021D1 true DE69216021D1 (de) 1997-01-30
DE69216021T2 DE69216021T2 (de) 1997-04-10

Family

ID=25071089

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69216021T Expired - Fee Related DE69216021T2 (de) 1991-09-20 1992-09-11 Flüchtige Vorläufer zur chemischen Dampfphasenabscheidung von Kupfer

Country Status (5)

Country Link
US (1) US5187300A (de)
EP (1) EP0533070B1 (de)
JP (1) JPH0649944B2 (de)
KR (1) KR950004895B1 (de)
DE (1) DE69216021T2 (de)

Families Citing this family (36)

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Publication number Priority date Publication date Assignee Title
US5442235A (en) * 1993-12-23 1995-08-15 Motorola Inc. Semiconductor device having an improved metal interconnect structure
JP2622671B2 (ja) * 1995-03-07 1997-06-18 株式会社トリケミカル研究所 銅のβ−ジケトネート錯体の製造方法
KR100225686B1 (ko) * 1995-03-20 1999-10-15 모리시다 요이치치 막형성용 재료 및 배선형성방법
AT402932B (de) * 1995-12-22 1997-09-25 Chemiefaser Lenzing Ag Celluloseschwamm und verfahren zu dessen herstellung
US6090960A (en) * 1997-01-07 2000-07-18 Sharp Laboratories Of America, Inc. Precursor with (methoxy) (methyl) silylolefin ligand to deposit copper and method same
US5767301A (en) * 1997-01-21 1998-06-16 Sharp Microelectronics Technology, Inc. Precursor with (alkyloxy)(alkyl)-silylolefin ligand to deposit copper
FR2760743B1 (fr) 1997-03-13 1999-07-23 Centre Nat Rech Scient Nouveaux precurseurs de cuivre(i) pour depot chimique en phase gazeuse de cuivre metallique
US6130161A (en) * 1997-05-30 2000-10-10 International Business Machines Corporation Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity
US6069068A (en) 1997-05-30 2000-05-30 International Business Machines Corporation Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity
JP3334605B2 (ja) * 1998-05-07 2002-10-15 三菱電機株式会社 電極形成用ｃｖｄ原料、およびそれを用いて形成されたキャパシタ用電極、配線膜
JP2002530520A (ja) * 1998-08-03 2002-09-17 アドバンスド．テクノロジー．マテリアルズ．インコーポレイテッド ミクロ電子工学素子構造体の製造のための銅前駆組成物及びその形成プロセス
US6066196A (en) * 1998-09-18 2000-05-23 Gelest, Inc. Method for the chemical vapor deposition of copper-based films and copper source precursors for the same
US6037001A (en) * 1998-09-18 2000-03-14 Gelest, Inc. Method for the chemical vapor deposition of copper-based films
US6204176B1 (en) * 1998-11-10 2001-03-20 Sharp Laboratories Of America, Inc. Substituted phenylethylene precursor deposition method
US7012292B1 (en) * 1998-11-25 2006-03-14 Advanced Technology Materials, Inc Oxidative top electrode deposition process, and microelectronic device structure
US6046364A (en) * 1998-12-07 2000-04-04 Air Products And Chemicals, Inc. Regeneration of metal CVD precursors
DE10080457T1 (de) * 1999-02-12 2001-04-26 Gelest Inc CVD-Abscheidung von Wolframnitrid
KR100298125B1 (ko) * 1999-04-15 2001-09-13 정명식 구리의 화학 증착에 유용한 유기 구리 전구체
US6184403B1 (en) * 1999-05-19 2001-02-06 Research Foundation Of State University Of New York MOCVD precursors based on organometalloid ligands
JP2002128787A (ja) * 1999-12-15 2002-05-09 Mitsubishi Materials Corp 有機銅化合物及び該化合物を含む混合液並びにそれを用いて作製された銅薄膜
US6589329B1 (en) 2000-03-09 2003-07-08 Advanced Technology Materials, Inc. Composition and process for production of copper circuitry in microelectronic device structures
EP1264817A1 (de) 2000-03-14 2002-12-11 Nissan Chemical Industries, Ltd. Beta-diketonatokupfer-komplexe mit allenverbindungen als liganden und verfahren zu deren herstellung
KR100382534B1 (ko) * 2000-12-13 2003-05-09 삼성전자주식회사 리간드 및 그에 의한 유기금속 전구체
KR100382533B1 (ko) * 2000-12-13 2003-05-09 삼성전자주식회사 리간드 및 그를 이용한 유기금속 전구체
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
US6534666B1 (en) 2001-12-27 2003-03-18 Air Products And Chemicals, Inc. Use of water and acidic water to purify liquid MOCVD precursors
US6838573B1 (en) 2004-01-30 2005-01-04 Air Products And Chemicals, Inc. Copper CVD precursors with enhanced adhesion properties
US7166732B2 (en) * 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
US9312557B2 (en) * 2005-05-11 2016-04-12 Schlumberger Technology Corporation Fuel cell apparatus and method for downhole power systems
WO2007142700A1 (en) * 2006-06-02 2007-12-13 Advanced Technology Materials, Inc. Copper (i) amidinates and guanidinates for forming copper thin films
TW200825200A (en) * 2006-12-05 2008-06-16 Advanced Tech Materials Metal aminotroponiminates, bis-oxazolinates and guanidinates
US7750173B2 (en) * 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
WO2009039216A1 (en) * 2007-09-17 2009-03-26 L'air Liquide - Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Neutral ligand containing precursors and methods for deposition of a metal containing film
US20100047988A1 (en) * 2008-08-19 2010-02-25 Youn-Joung Cho Methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor
US20110045183A1 (en) * 2009-08-18 2011-02-24 Youn-Joung Cho Methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor
US8563085B2 (en) 2009-08-18 2013-10-22 Samsung Electronics Co., Ltd. Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356527A (en) * 1964-04-23 1967-12-05 Ross W Moshier Vapor-plating metals from fluorocarbon keto metal compounds
US3594216A (en) * 1969-06-19 1971-07-20 Westinghouse Electric Corp Vapor phase deposition of metal from a metal-organic beta-ketoamine chelate
CA1178290A (en) * 1981-07-13 1984-11-20 Gerald Doyle Copper or silver complexes with fluorinated diketonates and unsaturated hydrocarbons
US4425281A (en) * 1981-07-13 1984-01-10 Exxon Research And Engineering Co. Copper or silver complexes with fluorinated diketones and unsaturated ligands
US5085731A (en) * 1991-02-04 1992-02-04 Air Products And Chemicals, Inc. Volatile liquid precursors for the chemical vapor deposition of copper

Also Published As

Publication number Publication date
US5187300A (en) 1993-02-16
EP0533070B1 (de) 1996-12-18
JPH0649944B2 (ja) 1994-06-29
EP0533070A2 (de) 1993-03-24
EP0533070A3 (en) 1994-11-02
DE69216021T2 (de) 1997-04-10
KR930006038A (ko) 1993-04-20
KR950004895B1 (ko) 1995-05-15
JPH05202476A (ja) 1993-08-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee