DE69111587D1 - Verfahren zur CVD von Kupfer. - Google Patents

Verfahren zur CVD von Kupfer.

Info

Publication number
DE69111587D1
DE69111587D1 DE69111587T DE69111587T DE69111587D1 DE 69111587 D1 DE69111587 D1 DE 69111587D1 DE 69111587 T DE69111587 T DE 69111587T DE 69111587 T DE69111587 T DE 69111587T DE 69111587 D1 DE69111587 D1 DE 69111587D1
Authority
DE
Germany
Prior art keywords
cvd
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69111587T
Other languages
English (en)
Other versions
DE69111587T2 (de
Inventor
John Anthony Thomas Norman
Paul Nigel Dyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Application granted granted Critical
Publication of DE69111587D1 publication Critical patent/DE69111587D1/de
Publication of DE69111587T2 publication Critical patent/DE69111587T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
DE69111587T 1990-12-31 1991-12-20 Verfahren zur CVD von Kupfer. Expired - Fee Related DE69111587T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/636,316 US5098516A (en) 1990-12-31 1990-12-31 Processes for the chemical vapor deposition of copper and etching of copper

Publications (2)

Publication Number Publication Date
DE69111587D1 true DE69111587D1 (de) 1995-08-31
DE69111587T2 DE69111587T2 (de) 1996-01-11

Family

ID=24551364

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69111587T Expired - Fee Related DE69111587T2 (de) 1990-12-31 1991-12-20 Verfahren zur CVD von Kupfer.

Country Status (7)

Country Link
US (1) US5098516A (de)
EP (1) EP0493754B1 (de)
JP (2) JPH0649942B2 (de)
KR (1) KR940005327B1 (de)
CA (1) CA2058483C (de)
DE (1) DE69111587T2 (de)
IE (1) IE73257B1 (de)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5316796A (en) * 1990-03-09 1994-05-31 Nippon Telegraph And Telephone Corporation Process for growing a thin metallic film
US5273775A (en) * 1990-09-12 1993-12-28 Air Products And Chemicals, Inc. Process for selectively depositing copper aluminum alloy onto a substrate
WO1993025063A1 (en) * 1992-06-01 1993-12-09 Martin Marietta Energy Systems, Inc. Ultralight electromagnetic interference shielding and method for making same
US5264248A (en) * 1992-08-03 1993-11-23 General Electric Company Adhesion of metal coatings of polypyromellitimides
US5387315A (en) * 1992-10-27 1995-02-07 Micron Technology, Inc. Process for deposition and etching of copper in multi-layer structures
US5358743A (en) * 1992-11-24 1994-10-25 University Of New Mexico Selective and blanket chemical vapor deposition of Cu from (β-diketonate)Cu(L)n by silica surface modification
US5368687A (en) * 1993-03-15 1994-11-29 Micron Technology, Inc. Semiconductor processing method of etching insulating inorganic metal oxide materials and method of cleaning metals from the surface of semiconductor wafers
US5322712A (en) * 1993-05-18 1994-06-21 Air Products And Chemicals, Inc. Process for improved quality of CVD copper films
US5431774A (en) * 1993-11-30 1995-07-11 Texas Instruments Incorporated Copper etching
KR0147682B1 (ko) * 1994-05-24 1998-11-02 구본준 반도체 소자의 금속배선 제조방법
US5412129A (en) * 1994-06-17 1995-05-02 Dicarolis; Stephen A. Stabilization of precursors for thin film deposition
US5464666A (en) * 1995-02-06 1995-11-07 Air Products And Chemicals, Inc. Process for chemical vapor codeposition of copper and aluminum alloys
JP2622671B2 (ja) * 1995-03-07 1997-06-18 株式会社トリケミカル研究所 銅のβ−ジケトネート錯体の製造方法
US5814238A (en) * 1995-10-12 1998-09-29 Sandia Corporation Method for dry etching of transition metals
KR0179797B1 (ko) * 1995-12-29 1999-04-15 문정환 바이어스 전압이 인가된 Cu 박막 형성방법
DE19637194C2 (de) * 1996-09-12 2003-10-02 Mattson Thermal Products Gmbh Gasgemisch und Verfahren zum Trockenätzen von Metallen, insbesondere Kupfer, bei niedrigen Temperaturen
US6090960A (en) * 1997-01-07 2000-07-18 Sharp Laboratories Of America, Inc. Precursor with (methoxy) (methyl) silylolefin ligand to deposit copper and method same
US5767301A (en) * 1997-01-21 1998-06-16 Sharp Microelectronics Technology, Inc. Precursor with (alkyloxy)(alkyl)-silylolefin ligand to deposit copper
FR2760743B1 (fr) 1997-03-13 1999-07-23 Centre Nat Rech Scient Nouveaux precurseurs de cuivre(i) pour depot chimique en phase gazeuse de cuivre metallique
US5939334A (en) * 1997-05-22 1999-08-17 Sharp Laboratories Of America, Inc. System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides
KR100256669B1 (ko) * 1997-12-23 2000-05-15 정선종 화학기상증착 장치 및 그를 이용한 구리 박막 형성 방법
KR100296959B1 (ko) * 1998-01-19 2001-09-22 정명식 구리의 화학 증착에 유용한 유기 구리 전구체
KR100259357B1 (ko) * 1998-02-07 2000-06-15 김영환 반도체 소자의 배선형성방법
JP3334605B2 (ja) * 1998-05-07 2002-10-15 三菱電機株式会社 電極形成用ｃｖｄ原料、およびそれを用いて形成されたキャパシタ用電極、配線膜
US6461675B2 (en) * 1998-07-10 2002-10-08 Cvc Products, Inc. Method for forming a copper film on a substrate
JP2002530520A (ja) * 1998-08-03 2002-09-17 アドバンスド．テクノロジー．マテリアルズ．インコーポレイテッド ミクロ電子工学素子構造体の製造のための銅前駆組成物及びその形成プロセス
KR20000013302A (ko) * 1998-08-06 2000-03-06 최형수 화학 증착법을 위한 유기 구리 전구체
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
US6037001A (en) * 1998-09-18 2000-03-14 Gelest, Inc. Method for the chemical vapor deposition of copper-based films
US6066196A (en) * 1998-09-18 2000-05-23 Gelest, Inc. Method for the chemical vapor deposition of copper-based films and copper source precursors for the same
US6245261B1 (en) * 1998-12-11 2001-06-12 Sharp Laboratories Of America, Inc. Substituted phenylethylene precursor and synthesis method
US6204176B1 (en) * 1998-11-10 2001-03-20 Sharp Laboratories Of America, Inc. Substituted phenylethylene precursor deposition method
US7012292B1 (en) * 1998-11-25 2006-03-14 Advanced Technology Materials, Inc Oxidative top electrode deposition process, and microelectronic device structure
US6046364A (en) * 1998-12-07 2000-04-04 Air Products And Chemicals, Inc. Regeneration of metal CVD precursors
US6294836B1 (en) 1998-12-22 2001-09-25 Cvc Products Inc. Semiconductor chip interconnect barrier material and fabrication method
US6436305B1 (en) * 1999-01-21 2002-08-20 Midwest Research Institute Passivating etchants for metallic particles
US6245655B1 (en) 1999-04-01 2001-06-12 Cvc Products, Inc. Method for planarized deposition of a material
US6337148B1 (en) 1999-05-25 2002-01-08 Advanced Technology Materials, Inc. Copper source reagent compositions, and method of making and using same for microelectronic device structures
US6110530A (en) * 1999-06-25 2000-08-29 Applied Materials, Inc. CVD method of depositing copper films by using improved organocopper precursor blend
WO2001045149A1 (en) * 1999-12-15 2001-06-21 Genitech Co., Ltd. Method of forming copper interconnections and thin films using chemical vapor deposition with catalyst
US6627995B2 (en) 2000-03-03 2003-09-30 Cvc Products, Inc. Microelectronic interconnect material with adhesion promotion layer and fabrication method
US6589329B1 (en) 2000-03-09 2003-07-08 Advanced Technology Materials, Inc. Composition and process for production of copper circuitry in microelectronic device structures
US6417369B1 (en) 2000-03-13 2002-07-09 Advanced Technology Materials, Inc. Pyrazolate copper complexes, and MOCVD of copper using same
EP1264817A1 (de) 2000-03-14 2002-12-11 Nissan Chemical Industries, Ltd. Beta-diketonatokupfer-komplexe mit allenverbindungen als liganden und verfahren zu deren herstellung
US6444263B1 (en) 2000-09-15 2002-09-03 Cvc Products, Inc. Method of chemical-vapor deposition of a material
KR100382533B1 (ko) * 2000-12-13 2003-05-09 삼성전자주식회사 리간드 및 그를 이용한 유기금속 전구체
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
US6509266B1 (en) 2001-04-02 2003-01-21 Air Products And Chemicals, Inc. Halogen addition for improved adhesion of CVD copper to barrier
EP1387898A4 (de) * 2001-04-16 2008-08-13 Sharp Kk Substituiertes cylcoalken enthaltende neue kupfervorläufer für die cvd-abscheidung von dünnen filmen aus metallischem kupfer
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6534666B1 (en) 2001-12-27 2003-03-18 Air Products And Chemicals, Inc. Use of water and acidic water to purify liquid MOCVD precursors
US6911391B2 (en) * 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
FR2839982B1 (fr) 2002-05-22 2005-04-15 Centre Nat Rech Scient Composition de precurseur pour le depot de cuivre sur un support
US20040009665A1 (en) * 2002-06-04 2004-01-15 Applied Materials, Inc. Deposition of copper films
EP1563117B1 (de) * 2002-11-15 2010-01-06 President And Fellows Of Harvard College Atomlagenabscheidung (ald) mit hilfe von metallamidinaten
US7140374B2 (en) * 2003-03-14 2006-11-28 Lam Research Corporation System, method and apparatus for self-cleaning dry etch
US7009281B2 (en) * 2003-03-14 2006-03-07 Lam Corporation Small volume process chamber with hot inner surfaces
US6939796B2 (en) * 2003-03-14 2005-09-06 Lam Research Corporation System, method and apparatus for improved global dual-damascene planarization
US7217649B2 (en) * 2003-03-14 2007-05-15 Lam Research Corporation System and method for stress free conductor removal
US7540935B2 (en) * 2003-03-14 2009-06-02 Lam Research Corporation Plasma oxidation and removal of oxidized material
US7078344B2 (en) * 2003-03-14 2006-07-18 Lam Research Corporation Stress free etch processing in combination with a dynamic liquid meniscus
US6821899B2 (en) * 2003-03-14 2004-11-23 Lam Research Corporation System, method and apparatus for improved local dual-damascene planarization
US7129167B1 (en) 2003-03-14 2006-10-31 Lam Research Corporation Methods and systems for a stress-free cleaning a surface of a substrate
US7232766B2 (en) * 2003-03-14 2007-06-19 Lam Research Corporation System and method for surface reduction, passivation, corrosion prevention and activation of copper surface
DE10319454A1 (de) * 2003-04-29 2004-11-18 Merck Patent Gmbh Dikupfer(I)oxalat-Komplexe als Precursor zur metallischen Kupferabscheidung
US7311946B2 (en) * 2003-05-02 2007-12-25 Air Products And Chemicals, Inc. Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes
WO2009105668A1 (en) * 2008-02-20 2009-08-27 President And Fellows Of Harvard College Bicyclic guanidines, metal complexes thereof and their use in vapor deposition
US6838573B1 (en) 2004-01-30 2005-01-04 Air Products And Chemicals, Inc. Copper CVD precursors with enhanced adhesion properties
US7166732B2 (en) * 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
US20060102895A1 (en) * 2004-11-16 2006-05-18 Hendrix Bryan C Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures
US7034169B1 (en) 2004-12-30 2006-04-25 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate complexes
US7205422B2 (en) * 2004-12-30 2007-04-17 Air Products And Chemicals, Inc. Volatile metal β-ketoiminate and metal β-diiminate complexes
US9312557B2 (en) * 2005-05-11 2016-04-12 Schlumberger Technology Corporation Fuel cell apparatus and method for downhole power systems
US7713907B2 (en) * 2006-03-06 2010-05-11 Uchicago Argonne, Llc Method of preparing size-selected metal clusters
US20080206445A1 (en) * 2007-02-22 2008-08-28 John Peck Selective separation processes
KR100683030B1 (ko) * 2006-11-23 2007-02-16 주식회사 이정이앤씨 건축물용 방수 전선관
TW200825200A (en) * 2006-12-05 2008-06-16 Advanced Tech Materials Metal aminotroponiminates, bis-oxazolinates and guanidinates
US7750173B2 (en) * 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
US7951711B2 (en) * 2007-05-21 2011-05-31 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Metal precursors for semiconductor applications
CN101680085B (zh) * 2007-05-21 2012-12-05 乔治洛德方法研究和开发液化空气有限公司 用于半导体领域的钴前体
TW200925314A (en) * 2007-09-17 2009-06-16 Air Liquide Neutral ligand containing precursors and methods for deposition of a metal containing film
US8263795B2 (en) * 2007-11-05 2012-09-11 Air Products And Chemicals, Inc. Copper precursors for thin film deposition
US20090130466A1 (en) * 2007-11-16 2009-05-21 Air Products And Chemicals, Inc. Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor
US9705124B2 (en) * 2012-02-27 2017-07-11 The Johns Hopkins University High energy density Li-ion battery electrode materials and cells

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356527A (en) * 1964-04-23 1967-12-05 Ross W Moshier Vapor-plating metals from fluorocarbon keto metal compounds
US3594216A (en) * 1969-06-19 1971-07-20 Westinghouse Electric Corp Vapor phase deposition of metal from a metal-organic beta-ketoamine chelate
IT1083401B (it) * 1977-05-27 1985-05-21 Alfachimici Spa Soluzione acida per l'attacco selettivo del rame
US4321073A (en) * 1980-10-15 1982-03-23 Hughes Aircraft Company Method and apparatus for forming metal coating on glass fiber
US4425281A (en) * 1981-07-13 1984-01-10 Exxon Research And Engineering Co. Copper or silver complexes with fluorinated diketones and unsaturated ligands
CA1178290A (en) * 1981-07-13 1984-11-20 Gerald Doyle Copper or silver complexes with fluorinated diketonates and unsaturated hydrocarbons
US4622095A (en) * 1985-10-18 1986-11-11 Ibm Corporation Laser stimulated halogen gas etching of metal substrates
US4948623A (en) * 1987-06-30 1990-08-14 International Business Machines Corporation Method of chemical vapor deposition of copper, silver, and gold using a cyclopentadienyl/metal complex
JP2811004B2 (ja) * 1988-05-23 1998-10-15 日本電信電話株式会社 金属薄膜成長方法および装置
US4904340A (en) * 1988-10-31 1990-02-27 Microelectronics And Computer Technology Corporation Laser-assisted liquid-phase etching of copper conductors

Also Published As

Publication number Publication date
JPH0649942B2 (ja) 1994-06-29
CA2058483A1 (en) 1992-07-01
DE69111587T2 (de) 1996-01-11
CA2058483C (en) 1999-01-05
IE914565A1 (en) 1992-07-01
EP0493754B1 (de) 1995-07-26
US5098516A (en) 1992-03-24
IE73257B1 (en) 1997-05-21
KR920012515A (ko) 1992-07-27
JP3262271B2 (ja) 2002-03-04
EP0493754A1 (de) 1992-07-08
JPH04318170A (ja) 1992-11-09
KR940005327B1 (ko) 1994-06-16
JPH10245678A (ja) 1998-09-14

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