DE69014799D1 - Methode zur Verhinderung einer Partikel-Verunreinigung. - Google Patents

Methode zur Verhinderung einer Partikel-Verunreinigung.

Info

Publication number
DE69014799D1
DE69014799D1 DE69014799T DE69014799T DE69014799D1 DE 69014799 D1 DE69014799 D1 DE 69014799D1 DE 69014799 T DE69014799 T DE 69014799T DE 69014799 T DE69014799 T DE 69014799T DE 69014799 D1 DE69014799 D1 DE 69014799D1
Authority
DE
Germany
Prior art keywords
particle contamination
preventing particle
preventing
contamination
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69014799T
Other languages
English (en)
Other versions
DE69014799T2 (de
Inventor
Stephen E Savas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69014799D1 publication Critical patent/DE69014799D1/de
Publication of DE69014799T2 publication Critical patent/DE69014799T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
DE69014799T 1989-09-26 1990-09-11 Methode zur Verhinderung einer Partikel-Verunreinigung. Expired - Fee Related DE69014799T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41272889A 1989-09-26 1989-09-26

Publications (2)

Publication Number Publication Date
DE69014799D1 true DE69014799D1 (de) 1995-01-19
DE69014799T2 DE69014799T2 (de) 1995-08-03

Family

ID=23634218

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69014799T Expired - Fee Related DE69014799T2 (de) 1989-09-26 1990-09-11 Methode zur Verhinderung einer Partikel-Verunreinigung.

Country Status (4)

Country Link
EP (1) EP0419930B1 (de)
JP (1) JPH03153885A (de)
KR (1) KR910007165A (de)
DE (1) DE69014799T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH687987A5 (de) * 1993-05-03 1997-04-15 Balzers Hochvakuum Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer.
KR0141659B1 (ko) * 1993-07-19 1998-07-15 가나이 쓰토무 이물제거 방법 및 장치
US5423918A (en) * 1993-09-21 1995-06-13 Applied Materials, Inc. Method for reducing particulate contamination during plasma processing of semiconductor devices
JP4133333B2 (ja) * 2001-02-15 2008-08-13 東京エレクトロン株式会社 被処理体の処理方法及びその処理装置
JP3836797B2 (ja) * 2003-02-18 2006-10-25 株式会社東芝 粒子堆積層形成装置及び粒子堆積層形成方法
DE102005055093A1 (de) * 2005-11-18 2007-05-24 Aixtron Ag CVD-Vorrichtung mit elektrostatischem Substratschutz
JP4865352B2 (ja) 2006-02-17 2012-02-01 三菱重工業株式会社 プラズマ処理装置及びプラズマ処理方法
JP5523436B2 (ja) 2011-12-19 2014-06-18 三菱電機株式会社 半導体清浄装置および半導体清浄方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5916837B2 (ja) * 1980-07-26 1984-04-18 住友電気工業株式会社 アルミめつき鋼に樹脂を被覆する方法
JPH0732147B2 (ja) * 1981-07-17 1995-04-10 富士通株式会社 ウエハの清浄方法
JPS6167919A (ja) * 1984-09-12 1986-04-08 Hitachi Ltd 基板後処理装置
JPS6179230A (ja) * 1984-09-27 1986-04-22 Agency Of Ind Science & Technol 半導体基板の処理方法
US4728389A (en) * 1985-05-20 1988-03-01 Applied Materials, Inc. Particulate-free epitaxial process
US4785962A (en) * 1987-04-20 1988-11-22 Applied Materials, Inc. Vacuum chamber slit valve

Also Published As

Publication number Publication date
EP0419930B1 (de) 1994-12-07
DE69014799T2 (de) 1995-08-03
JPH03153885A (ja) 1991-07-01
EP0419930A2 (de) 1991-04-03
EP0419930A3 (en) 1991-10-23
KR910007165A (ko) 1991-04-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee