DE68908102D1 - Methode zur bewertung der uebergangszone einer epitaktischen siliziumscheibe. - Google Patents

Methode zur bewertung der uebergangszone einer epitaktischen siliziumscheibe.

Info

Publication number
DE68908102D1
DE68908102D1 DE8989403272T DE68908102T DE68908102D1 DE 68908102 D1 DE68908102 D1 DE 68908102D1 DE 8989403272 T DE8989403272 T DE 8989403272T DE 68908102 T DE68908102 T DE 68908102T DE 68908102 D1 DE68908102 D1 DE 68908102D1
Authority
DE
Germany
Prior art keywords
epitactic
evaluating
transition zone
silicone disc
silicone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989403272T
Other languages
English (en)
Other versions
DE68908102T2 (de
Inventor
Katsuhiko Miki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE68908102D1 publication Critical patent/DE68908102D1/de
Publication of DE68908102T2 publication Critical patent/DE68908102T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE89403272T 1988-11-25 1989-11-27 Methode zur Bewertung der Übergangszone einer epitaktischen Siliziumscheibe. Expired - Fee Related DE68908102T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63296321A JPH071780B2 (ja) 1988-11-25 1988-11-25 エピタキシャルウエーハの遷移領域の評価方法

Publications (2)

Publication Number Publication Date
DE68908102D1 true DE68908102D1 (de) 1993-09-09
DE68908102T2 DE68908102T2 (de) 1993-11-18

Family

ID=17832031

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89403272T Expired - Fee Related DE68908102T2 (de) 1988-11-25 1989-11-27 Methode zur Bewertung der Übergangszone einer epitaktischen Siliziumscheibe.

Country Status (4)

Country Link
US (1) US5099122A (de)
EP (1) EP0370919B1 (de)
JP (1) JPH071780B2 (de)
DE (1) DE68908102T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5386119A (en) * 1993-03-25 1995-01-31 Hughes Aircraft Company Apparatus and method for thick wafer measurement
US6284986B1 (en) 1999-03-15 2001-09-04 Seh America, Inc. Method of determining the thickness of a layer on a silicon substrate
US6286685B1 (en) 1999-03-15 2001-09-11 Seh America, Inc. System and method for wafer thickness sorting
JP6123150B2 (ja) * 2011-08-30 2017-05-10 株式会社Sumco シリコンウェーハ加工量の評価方法およびシリコンウェーハの製造方法
FR2985812B1 (fr) * 2012-01-16 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de test de substrats semi-conducteurs pour applications radiofrequences

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4203799A (en) * 1975-05-30 1980-05-20 Hitachi, Ltd. Method for monitoring thickness of epitaxial growth layer on substrate
US4555767A (en) * 1982-05-27 1985-11-26 International Business Machines Corporation Method and apparatus for measuring thickness of epitaxial layer by infrared reflectance
US4522510A (en) * 1982-07-26 1985-06-11 Therma-Wave, Inc. Thin film thickness measurement with thermal waves
US4625114A (en) * 1985-07-15 1986-11-25 At&T Technologies, Inc. Method and apparatus for nondestructively determining the characteristics of a multilayer thin film structure

Also Published As

Publication number Publication date
JPH02143543A (ja) 1990-06-01
DE68908102T2 (de) 1993-11-18
EP0370919B1 (de) 1993-08-04
EP0370919A3 (en) 1990-11-28
EP0370919A2 (de) 1990-05-30
US5099122A (en) 1992-03-24
JPH071780B2 (ja) 1995-01-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee