DE69212042D1 - Lichtemittierende Vorrichtung mit einer stufenförmigen Nichtnukleierungsschicht - Google Patents

Lichtemittierende Vorrichtung mit einer stufenförmigen Nichtnukleierungsschicht

Info

Publication number
DE69212042D1
DE69212042D1 DE69212042T DE69212042T DE69212042D1 DE 69212042 D1 DE69212042 D1 DE 69212042D1 DE 69212042 T DE69212042 T DE 69212042T DE 69212042 T DE69212042 T DE 69212042T DE 69212042 D1 DE69212042 D1 DE 69212042D1
Authority
DE
Germany
Prior art keywords
nucleation layer
emitting device
light
electrodes
shaped non
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69212042T
Other languages
English (en)
Other versions
DE69212042T2 (de
Inventor
Hideji Kawasaki
Hiroyuki Tokunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69212042D1 publication Critical patent/DE69212042D1/de
Publication of DE69212042T2 publication Critical patent/DE69212042T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE69212042T 1991-04-15 1992-04-14 Lichtemittierende Vorrichtung mit einer stufenförmigen Nichtnukleierungsschicht Expired - Fee Related DE69212042T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10812491A JP2753153B2 (ja) 1991-04-15 1991-04-15 発光素子

Publications (2)

Publication Number Publication Date
DE69212042D1 true DE69212042D1 (de) 1996-08-14
DE69212042T2 DE69212042T2 (de) 1997-01-02

Family

ID=14476543

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69212042T Expired - Fee Related DE69212042T2 (de) 1991-04-15 1992-04-14 Lichtemittierende Vorrichtung mit einer stufenförmigen Nichtnukleierungsschicht

Country Status (5)

Country Link
US (1) US5250819A (de)
EP (1) EP0509452B1 (de)
JP (1) JP2753153B2 (de)
AT (1) ATE140343T1 (de)
DE (1) DE69212042T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0531957A (ja) * 1991-05-23 1993-02-09 Canon Inc 発光装置、これを用いた光書き込みプリンターヘツド並びに該光書き込みプリンターヘツドによる光プリンター装置
US6489637B1 (en) * 1999-06-09 2002-12-03 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5429239B2 (de) * 1974-12-04 1979-09-21
JPS59168671A (ja) * 1983-03-15 1984-09-22 Nec Corp 半導体装置の製造方法
JPS608384A (ja) * 1983-06-28 1985-01-17 Isao Miyake アルカリハライドの螢光を窒素により活性化する方法
US4768070A (en) * 1986-03-20 1988-08-30 Hitachi, Ltd Optoelectronics device
CA1329756C (en) * 1986-04-11 1994-05-24 Yutaka Hirai Method for forming crystalline deposited film
CA1321121C (en) * 1987-03-27 1993-08-10 Hiroyuki Tokunaga Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
JPS63239920A (ja) * 1987-03-27 1988-10-05 Canon Inc 半導体素子用基板の製造方法
DE3727488C2 (de) * 1987-08-18 1994-05-26 Telefunken Microelectron Optoelektronisches Bauelement
EP0339793B1 (de) * 1988-03-27 1994-01-26 Canon Kabushiki Kaisha Verfahren zur Herstellung einer Kristallschicht auf einem Substrat
JPH02125765A (ja) * 1988-11-04 1990-05-14 Mitsubishi Electric Corp Ｌｅｄアレイ・ヘッド
JPH02201975A (ja) * 1989-01-31 1990-08-10 Canon Inc 発光装置
JPH036858A (ja) * 1989-06-02 1991-01-14 Mitsubishi Electric Corp マスタスライス方式半導体集積回路装置
JPH036856A (ja) * 1989-06-05 1991-01-14 Canon Inc 絶縁ゲート型半導体装置及びその形成方法

Also Published As

Publication number Publication date
ATE140343T1 (de) 1996-07-15
DE69212042T2 (de) 1997-01-02
EP0509452A1 (de) 1992-10-21
US5250819A (en) 1993-10-05
JPH04316375A (ja) 1992-11-06
JP2753153B2 (ja) 1998-05-18
EP0509452B1 (de) 1996-07-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee