DE3780239D1 - Licht emittierende diode mit doppelter heterostruktur. - Google Patents

Licht emittierende diode mit doppelter heterostruktur.

Info

Publication number
DE3780239D1
DE3780239D1 DE8787307928T DE3780239T DE3780239D1 DE 3780239 D1 DE3780239 D1 DE 3780239D1 DE 8787307928 T DE8787307928 T DE 8787307928T DE 3780239 T DE3780239 T DE 3780239T DE 3780239 D1 DE3780239 D1 DE 3780239D1
Authority
DE
Germany
Prior art keywords
light
emitting diode
double heterostructure
heterostructure
double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787307928T
Other languages
English (en)
Other versions
DE3780239T2 (de
Inventor
Toshio C O Nec Corporation Uji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3780239D1 publication Critical patent/DE3780239D1/de
Application granted granted Critical
Publication of DE3780239T2 publication Critical patent/DE3780239T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/305—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table characterised by the doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE8787307928T 1986-09-12 1987-09-08 Licht emittierende diode mit doppelter heterostruktur. Expired - Lifetime DE3780239T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21650586A JPH071798B2 (ja) 1986-09-12 1986-09-12 発光ダイオ−ド

Publications (2)

Publication Number Publication Date
DE3780239D1 true DE3780239D1 (de) 1992-08-13
DE3780239T2 DE3780239T2 (de) 1993-02-25

Family

ID=16689479

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787307928T Expired - Lifetime DE3780239T2 (de) 1986-09-12 1987-09-08 Licht emittierende diode mit doppelter heterostruktur.

Country Status (4)

Country Link
US (1) US4862230A (de)
EP (1) EP0260110B1 (de)
JP (1) JPH071798B2 (de)
DE (1) DE3780239T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0832110A (ja) * 1994-07-19 1996-02-02 Oki Electric Ind Co Ltd 端面発光型ｌｅｄ、端面発光型発光素子の製造方法、端面発光型発光素子の発光特性測定方法
GB9415528D0 (en) * 1994-08-01 1994-09-21 Secr Defence Mid infrared emitting diode
WO2000019545A1 (de) * 1998-09-30 2000-04-06 Osram Opto Semiconductors Gmbh & Co. Ohg Oberflächenemittierende diodenstrahlungsquelle
CN100334745C (zh) * 1999-11-05 2007-08-29 洲磊科技股份有限公司 发光半导体装置及其制作方法
KR101506264B1 (ko) * 2008-06-13 2015-03-30 삼성전자주식회사 발광 소자, 발광 장치 및 상기 발광 소자의 제조 방법
US8618575B2 (en) 2010-09-21 2013-12-31 Quantum Electro Opto Systems Sdn. Bhd. Light emitting and lasing semiconductor methods and devices
US9768345B2 (en) 2013-12-20 2017-09-19 Apple Inc. LED with current injection confinement trench
JP6454443B2 (ja) * 2015-09-11 2019-01-16 アーベーベー・シュバイツ・アーゲー フラットゲート転流型サイリスタ
JP6662092B2 (ja) 2016-02-23 2020-03-11 株式会社デンソー 化合物半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3419742A (en) * 1965-11-24 1968-12-31 Monsanto Co Injection-luminescent gaas diodes having a graded p-n junction
DK123503B (da) * 1970-01-19 1972-07-03 H Bertelsen Bordudtræk.
US3977016A (en) * 1972-07-12 1976-08-24 U.S. Philips Corporation Electroluminescent device and method of manufacturing same
US4184170A (en) * 1977-02-11 1980-01-15 Xerox Corporation Light emitting diode
JPS543483A (en) * 1977-06-10 1979-01-11 Hitachi Ltd Liminous semiconductor device
JPS5890789A (ja) * 1981-11-25 1983-05-30 Nec Corp 半導体発光ダイオ−ド
JPS58142583A (ja) * 1982-02-19 1983-08-24 Hitachi Ltd 発光素子
JPS58197784A (ja) * 1982-05-12 1983-11-17 Nec Corp 発光ダイオ−ド
JPS6086879A (ja) * 1983-10-19 1985-05-16 Sumitomo Electric Ind Ltd 半導体発光素子の製造方法
US4608694A (en) * 1983-12-27 1986-08-26 General Motors Corporation Lead-europium selenide-telluride heterojunction semiconductor laser
CA1251549A (en) * 1984-07-24 1989-03-21 Akira Suzuki Semiconductor light emitting device

Also Published As

Publication number Publication date
EP0260110A2 (de) 1988-03-16
JPS6370580A (ja) 1988-03-30
EP0260110A3 (en) 1989-04-05
US4862230A (en) 1989-08-29
JPH071798B2 (ja) 1995-01-11
DE3780239T2 (de) 1993-02-25
EP0260110B1 (de) 1992-07-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition