DE3587782T2 - Dioden mit Schottky-Übergang. - Google Patents

Dioden mit Schottky-Übergang.

Info

Publication number
DE3587782T2
DE3587782T2 DE3587782T DE3587782T DE3587782T2 DE 3587782 T2 DE3587782 T2 DE 3587782T2 DE 3587782 T DE3587782 T DE 3587782T DE 3587782 T DE3587782 T DE 3587782T DE 3587782 T2 DE3587782 T2 DE 3587782T2
Authority
DE
Germany
Prior art keywords
schottky junction
junction diodes
diodes
schottky
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3587782T
Other languages
English (en)
Other versions
DE3587782D1 (de
Inventor
Vladimir F Drobny
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Maxim Integrated Products Inc
Original Assignee
Tektronix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tektronix Inc filed Critical Tektronix Inc
Application granted granted Critical
Publication of DE3587782D1 publication Critical patent/DE3587782D1/de
Publication of DE3587782T2 publication Critical patent/DE3587782T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28537—Deposition of Schottky electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/019—Contacts of silicides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
DE3587782T 1984-01-30 1985-01-25 Dioden mit Schottky-Übergang. Expired - Lifetime DE3587782T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/575,235 US4622736A (en) 1984-01-30 1984-01-30 Schottky barrier diodes

Publications (2)

Publication Number Publication Date
DE3587782D1 DE3587782D1 (de) 1994-04-28
DE3587782T2 true DE3587782T2 (de) 1994-11-03

Family

ID=24299475

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3587782T Expired - Lifetime DE3587782T2 (de) 1984-01-30 1985-01-25 Dioden mit Schottky-Übergang.

Country Status (4)

Country Link
US (1) US4622736A (de)
EP (1) EP0151004B1 (de)
JP (1) JPS60176281A (de)
DE (1) DE3587782T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229323A (en) * 1987-08-21 1993-07-20 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device with Schottky electrodes
US4954864A (en) * 1988-12-13 1990-09-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Millimeter-wave monolithic diode-grid frequency multiplier
US6027954A (en) 1998-05-29 2000-02-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Gas sensing diode and method of manufacturing
US6690037B1 (en) 2000-08-31 2004-02-10 Agere Systems Inc. Field plated Schottky diode
US20060022291A1 (en) * 2004-07-28 2006-02-02 Vladimir Drobny Unguarded schottky diodes with sidewall spacer at the perimeter of the diode
US8435873B2 (en) 2006-06-08 2013-05-07 Texas Instruments Incorporated Unguarded Schottky barrier diodes with dielectric underetch at silicide interface

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560809A (en) * 1968-03-04 1971-02-02 Hitachi Ltd Variable capacitance rectifying junction diode
US3891479A (en) * 1971-10-19 1975-06-24 Motorola Inc Method of making a high current Schottky barrier device
JPS5136878A (en) * 1974-09-14 1976-03-27 Tokyo Shibaura Electric Co Handotaisochi no seizohoho
US4119446A (en) * 1977-08-11 1978-10-10 Motorola Inc. Method for forming a guarded Schottky barrier diode by ion-implantation
FR2460040A1 (fr) * 1979-06-22 1981-01-16 Thomson Csf Procede pour realiser une diode schottky a tenue en tension amelioree
FR2480035A1 (fr) * 1980-04-04 1981-10-09 Thomson Csf Diode schottky de puissance et son procede de fabrication
JPS5749277A (en) * 1980-09-09 1982-03-23 Mitsubishi Electric Corp Manufacture for schottky barrier diode
US4394673A (en) * 1980-09-29 1983-07-19 International Business Machines Corporation Rare earth silicide Schottky barriers
US4395813A (en) * 1980-10-22 1983-08-02 Hughes Aircraft Company Process for forming improved superconductor/semiconductor junction structures
JPS58107685A (ja) * 1981-12-21 1983-06-27 Fuji Electric Corp Res & Dev Ltd シヨツトキバリアダイオ−ドの製造方法
JPS593978A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置
JPS59232457A (ja) * 1983-06-15 1984-12-27 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
JPS60176281A (ja) 1985-09-10
EP0151004A3 (en) 1987-12-02
EP0151004B1 (de) 1994-03-23
US4622736A (en) 1986-11-18
JPH0573067B2 (de) 1993-10-13
DE3587782D1 (de) 1994-04-28
EP0151004A2 (de) 1985-08-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MAXIM INTEGRATED PRODUCTS, INC.(N.D.GES.D.STAATES

8328 Change in the person/name/address of the agent

Free format text: ZENZ, HELBER, HOSBACH & PARTNER, 45128 ESSEN