EP0151004A3 - Schottky barrier diodes - Google Patents

Schottky barrier diodes Download PDF

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Publication number
EP0151004A3
EP0151004A3 EP85300516A EP85300516A EP0151004A3 EP 0151004 A3 EP0151004 A3 EP 0151004A3 EP 85300516 A EP85300516 A EP 85300516A EP 85300516 A EP85300516 A EP 85300516A EP 0151004 A3 EP0151004 A3 EP 0151004A3
Authority
EP
European Patent Office
Prior art keywords
schottky barrier
barrier diodes
diodes
schottky
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP85300516A
Other versions
EP0151004A2 (en
EP0151004B1 (en
Inventor
Vladimir F. Drobny
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Maxim Integrated Products Inc
Original Assignee
Tektronix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tektronix Inc filed Critical Tektronix Inc
Publication of EP0151004A2 publication Critical patent/EP0151004A2/en
Publication of EP0151004A3 publication Critical patent/EP0151004A3/en
Application granted granted Critical
Publication of EP0151004B1 publication Critical patent/EP0151004B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28537—Deposition of Schottky electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/019—Contacts of silicides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/147—Silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
EP85300516A 1984-01-30 1985-01-25 Schottky barrier diodes Expired - Lifetime EP0151004B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US575235 1984-01-30
US06/575,235 US4622736A (en) 1984-01-30 1984-01-30 Schottky barrier diodes

Publications (3)

Publication Number Publication Date
EP0151004A2 EP0151004A2 (en) 1985-08-07
EP0151004A3 true EP0151004A3 (en) 1987-12-02
EP0151004B1 EP0151004B1 (en) 1994-03-23

Family

ID=24299475

Family Applications (1)

Application Number Title Priority Date Filing Date
EP85300516A Expired - Lifetime EP0151004B1 (en) 1984-01-30 1985-01-25 Schottky barrier diodes

Country Status (4)

Country Link
US (1) US4622736A (en)
EP (1) EP0151004B1 (en)
JP (1) JPS60176281A (en)
DE (1) DE3587782T2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229323A (en) * 1987-08-21 1993-07-20 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device with Schottky electrodes
US4954864A (en) * 1988-12-13 1990-09-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Millimeter-wave monolithic diode-grid frequency multiplier
US6027954A (en) * 1998-05-29 2000-02-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Gas sensing diode and method of manufacturing
US6690037B1 (en) 2000-08-31 2004-02-10 Agere Systems Inc. Field plated Schottky diode
US20060022291A1 (en) * 2004-07-28 2006-02-02 Vladimir Drobny Unguarded schottky diodes with sidewall spacer at the perimeter of the diode
US8435873B2 (en) 2006-06-08 2013-05-07 Texas Instruments Incorporated Unguarded Schottky barrier diodes with dielectric underetch at silicide interface

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560809A (en) * 1968-03-04 1971-02-02 Hitachi Ltd Variable capacitance rectifying junction diode
US4119446A (en) * 1977-08-11 1978-10-10 Motorola Inc. Method for forming a guarded Schottky barrier diode by ion-implantation
EP0021869A1 (en) * 1979-06-22 1981-01-07 Thomson-Csf Method of making a Schottky diode with improved voltage properties
FR2480035A1 (en) * 1980-04-04 1981-10-09 Thomson Csf 50 Amp silicon titanium junction Schottky power diode - is heat treated during fabrication to freely grow cpds. in boundary layer and make device stable to 650 degrees C
EP0048849A2 (en) * 1980-09-29 1982-04-07 International Business Machines Corporation Methods of producing Schottky barrier silicide contacts on silicon subtrates and silicon semiconductor devices provided with Schottky barrier silicide contacts

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3891479A (en) * 1971-10-19 1975-06-24 Motorola Inc Method of making a high current Schottky barrier device
JPS5136878A (en) * 1974-09-14 1976-03-27 Tokyo Shibaura Electric Co Handotaisochi no seizohoho
JPS5749277A (en) * 1980-09-09 1982-03-23 Mitsubishi Electric Corp Manufacture for schottky barrier diode
US4395813A (en) * 1980-10-22 1983-08-02 Hughes Aircraft Company Process for forming improved superconductor/semiconductor junction structures
JPS58107685A (en) * 1981-12-21 1983-06-27 Fuji Electric Corp Res & Dev Ltd Manufacture of schottky barrier diode
JPS593978A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor device
JPS59232457A (en) * 1983-06-15 1984-12-27 Hitachi Ltd Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560809A (en) * 1968-03-04 1971-02-02 Hitachi Ltd Variable capacitance rectifying junction diode
US4119446A (en) * 1977-08-11 1978-10-10 Motorola Inc. Method for forming a guarded Schottky barrier diode by ion-implantation
EP0021869A1 (en) * 1979-06-22 1981-01-07 Thomson-Csf Method of making a Schottky diode with improved voltage properties
FR2480035A1 (en) * 1980-04-04 1981-10-09 Thomson Csf 50 Amp silicon titanium junction Schottky power diode - is heat treated during fabrication to freely grow cpds. in boundary layer and make device stable to 650 degrees C
EP0048849A2 (en) * 1980-09-29 1982-04-07 International Business Machines Corporation Methods of producing Schottky barrier silicide contacts on silicon subtrates and silicon semiconductor devices provided with Schottky barrier silicide contacts

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF APPLIED PHYSICS, vol. 53, no. 10, October 1982, pages 6885-6890, New York, US; M. EIZENBERG et al.: "Formation and Schottky behavior of manganese silicides on eta-type silicon" *
JOURNAL OF APPLIED PHYSICS, vol. 53, no. 10, October 1982, pages 6891-6897, New York, US; M. EIZENBERG et al.: "A study of vanadium as diffusion barrier between aluminium and gadolinium silicide contacts" *
THIN SOLID FILMS, vol. 75, no. 3, 16th January 1981, pages 247-252, Lausanne, CH; H. KOTAKE et al.: "The diffusion barrier effect of a vanadium layer in the formation of nickel silicides" *

Also Published As

Publication number Publication date
JPH0573067B2 (en) 1993-10-13
EP0151004A2 (en) 1985-08-07
EP0151004B1 (en) 1994-03-23
US4622736A (en) 1986-11-18
JPS60176281A (en) 1985-09-10
DE3587782T2 (en) 1994-11-03
DE3587782D1 (en) 1994-04-28

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