DE3583401D1 - Fotovoltaisches element. - Google Patents

Fotovoltaisches element.

Info

Publication number
DE3583401D1
DE3583401D1 DE8585301241T DE3583401T DE3583401D1 DE 3583401 D1 DE3583401 D1 DE 3583401D1 DE 8585301241 T DE8585301241 T DE 8585301241T DE 3583401 T DE3583401 T DE 3583401T DE 3583401 D1 DE3583401 D1 DE 3583401D1
Authority
DE
Germany
Prior art keywords
photovoltaic element
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585301241T
Other languages
English (en)
Inventor
Ryoji Fujiwara
Minori Yamaguchi
Isamu Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Canon Inc
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc, Kanegafuchi Chemical Industry Co Ltd filed Critical Canon Inc
Application granted granted Critical
Publication of DE3583401D1 publication Critical patent/DE3583401D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the metal-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
DE8585301241T 1984-02-23 1985-02-25 Fotovoltaisches element. Expired - Lifetime DE3583401D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59033003A JPH0658971B2 (ja) 1984-02-23 1984-02-23 光起電力素子の製造方法

Publications (1)

Publication Number Publication Date
DE3583401D1 true DE3583401D1 (de) 1991-08-14

Family

ID=12374661

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585301241T Expired - Lifetime DE3583401D1 (de) 1984-02-23 1985-02-25 Fotovoltaisches element.

Country Status (4)

Country Link
US (1) US4892594A (de)
EP (1) EP0155106B1 (de)
JP (1) JPH0658971B2 (de)
DE (1) DE3583401D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0658971B2 (ja) * 1984-02-23 1994-08-03 キヤノン株式会社 光起電力素子の製造方法
JPH01128477A (ja) * 1987-11-12 1989-05-22 Ricoh Co Ltd アモルファスシリコン光センサー
JP2846651B2 (ja) * 1989-03-31 1999-01-13 三洋電機株式会社 光起電力装置
FR2737045B1 (fr) * 1995-07-21 1997-08-29 Commissariat Energie Atomique Structure photosensible durcie aux rayonnements electromagnetiques durs et son application aux cameras video
JP2001189478A (ja) * 1999-12-28 2001-07-10 Sanyo Electric Co Ltd 半導体素子及びその製造方法
JP2002134772A (ja) * 2000-10-24 2002-05-10 Canon Inc シリコン系薄膜及び光起電力素子
GB2450324B (en) * 2007-06-19 2011-12-07 Jeffery Boardman A method of producing daylight reactive transition metal oxide photovoltaic diodes
CN103534814A (zh) * 2011-01-14 2014-01-22 庐光股份有限公司 光伏电池
US9112086B2 (en) * 2011-11-10 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US20130319515A1 (en) * 2012-06-01 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL46896A (en) * 1974-03-27 1977-07-31 Innotech Corp Semiconductive device
DE3049226A1 (de) * 1975-05-20 1982-03-11 Pao Hsien Dr. 02178 Belmont Mass. Fang "solarzelle"
US4109271A (en) 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
US4173497A (en) * 1977-08-26 1979-11-06 Ametek, Inc. Amorphous lead dioxide photovoltaic generator
JPS5548978A (en) * 1978-10-04 1980-04-08 Asahi Chem Ind Co Ltd Photo-electromotive element
JPS5658628A (en) * 1979-10-20 1981-05-21 Yamatake Honeywell Co Ltd Flame detecting device
JPS5690399A (en) * 1979-12-24 1981-07-22 Matsushita Electric Ind Co Ltd Fire detector
JPS5693376A (en) * 1979-12-26 1981-07-28 Asahi Chem Ind Co Ltd Semiconductor device
US4358782A (en) * 1980-01-17 1982-11-09 Asahi Kasei Kogyo Kabushiki Kaisha Semiconductor device
JPS5785271A (en) * 1980-11-10 1982-05-27 Atlantic Richfield Co Photovoltaic device and method of producing same
JPS5917287A (ja) * 1982-07-21 1984-01-28 Hitachi Ltd 光起電力装置
US4485265A (en) * 1982-11-22 1984-11-27 President And Fellows Of Harvard College Photovoltaic cell
JPS59132174A (ja) * 1983-01-19 1984-07-30 Futaba Corp 光起電力素子
JPH0658971B2 (ja) * 1984-02-23 1994-08-03 キヤノン株式会社 光起電力素子の製造方法
JPS60258975A (ja) * 1984-06-05 1985-12-20 Sanyo Electric Co Ltd 光起電力装置
US4689438A (en) * 1984-10-17 1987-08-25 Sanyo Electric Co., Ltd. Photovoltaic device
JPH06205073A (ja) * 1991-06-20 1994-07-22 Futaba Corp 通信速度の自動検出装置

Also Published As

Publication number Publication date
US4892594A (en) 1990-01-09
EP0155106A2 (de) 1985-09-18
JPS60180175A (ja) 1985-09-13
EP0155106A3 (en) 1986-10-08
JPH0658971B2 (ja) 1994-08-03
EP0155106B1 (de) 1991-07-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee