SE9101395D0 - Ytlysande lysdiod - Google Patents

Ytlysande lysdiod

Info

Publication number
SE9101395D0
SE9101395D0 SE9101395A SE9101395A SE9101395D0 SE 9101395 D0 SE9101395 D0 SE 9101395D0 SE 9101395 A SE9101395 A SE 9101395A SE 9101395 A SE9101395 A SE 9101395A SE 9101395 D0 SE9101395 D0 SE 9101395D0
Authority
SE
Sweden
Prior art keywords
led
explanatory
layer
active layer
diode
Prior art date
Application number
SE9101395A
Other languages
English (en)
Other versions
SE9101395L (sv
SE468410B (sv
Inventor
H Nettelbladt
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Priority to SE9101395A priority Critical patent/SE468410B/sv
Publication of SE9101395D0 publication Critical patent/SE9101395D0/sv
Priority to US07/731,776 priority patent/US5151756A/en
Priority to DE69215534T priority patent/DE69215534T2/de
Priority to PCT/SE1992/000210 priority patent/WO1992020106A1/en
Priority to JP4509304A priority patent/JPH06502281A/ja
Priority to EP92909801A priority patent/EP0616730B1/en
Publication of SE9101395L publication Critical patent/SE9101395L/sv
Publication of SE468410B publication Critical patent/SE468410B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
SE9101395A 1991-05-08 1991-05-08 Ytlysande lysdiod SE468410B (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9101395A SE468410B (sv) 1991-05-08 1991-05-08 Ytlysande lysdiod
US07/731,776 US5151756A (en) 1991-05-08 1991-07-18 Surface emitting heterojunction light emitting diode
DE69215534T DE69215534T2 (de) 1991-05-08 1992-04-02 Elektrolumineszenzdiode, die sicht aus der oberfläche emittiert
PCT/SE1992/000210 WO1992020106A1 (en) 1991-05-08 1992-04-02 Surface emitting light emitting diode___________________________
JP4509304A JPH06502281A (ja) 1991-05-08 1992-04-02 表面発射発光ダイオード
EP92909801A EP0616730B1 (en) 1991-05-08 1992-04-02 Surface emitting light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9101395A SE468410B (sv) 1991-05-08 1991-05-08 Ytlysande lysdiod

Publications (3)

Publication Number Publication Date
SE9101395D0 true SE9101395D0 (sv) 1991-05-08
SE9101395L SE9101395L (sv) 1992-11-09
SE468410B SE468410B (sv) 1993-01-11

Family

ID=20382680

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9101395A SE468410B (sv) 1991-05-08 1991-05-08 Ytlysande lysdiod

Country Status (6)

Country Link
US (1) US5151756A (sv)
EP (1) EP0616730B1 (sv)
JP (1) JPH06502281A (sv)
DE (1) DE69215534T2 (sv)
SE (1) SE468410B (sv)
WO (1) WO1992020106A1 (sv)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE509809C2 (sv) 1995-11-03 1999-03-08 Mitel Semiconductor Ab Lysdiod med uppdelat ljusemitterande område
US6633120B2 (en) 1998-11-19 2003-10-14 Unisplay S.A. LED lamps
US8587020B2 (en) 1997-11-19 2013-11-19 Epistar Corporation LED lamps
DE19902750A1 (de) 1999-01-25 2000-08-03 Osram Opto Semiconductors Gmbh Halbleiterbauelement zur Erzeugung von mischfarbiger elektromagnetischer Strahlung
EP1927024A1 (en) * 2005-08-29 2008-06-04 Koninklijke Philips Electronics N.V. Light source and method of providing a bundle of light
DE102018101089A1 (de) * 2018-01-18 2019-07-18 Osram Opto Semiconductors Gmbh Epitaktisches konversionselement, verfahren zur herstellung eines epitaktischen konversionselements, strahlungsemittierender halbleiterchip und verfahren zur herstellung eines strahlungsemittierenden halbleiterchips

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2730273A1 (de) * 1977-07-05 1979-01-25 Bayer Ag N,n-dialkyl-o-pyrimidinyl-carbaminsaeureester, verfahren zu ihrer herstellung und ihre verwendung als insektizide
JPS54146984A (en) * 1978-05-10 1979-11-16 Matsushita Electric Ind Co Ltd Luminous element
JPS567485A (en) * 1979-06-29 1981-01-26 Sharp Corp Manufacturing of luminous element
JPS5640287A (en) * 1979-09-11 1981-04-16 Matsushita Electric Ind Co Ltd Semiconductor light-emitting device
US4374390A (en) * 1980-09-10 1983-02-15 Bell Telephone Laboratories, Incorporated Dual-wavelength light-emitting diode
JPS59978A (ja) * 1982-06-25 1984-01-06 Sumitomo Electric Ind Ltd 多重活性層半導体発光素子
FR2538171B1 (fr) * 1982-12-21 1986-02-28 Thomson Csf Diode electroluminescente a emission de surface
JPS617674A (ja) * 1984-06-22 1986-01-14 Nec Corp ３／５族化合物半導体発光素子
US4706101A (en) * 1984-10-27 1987-11-10 Kabushiki Kaisha Toshiba Light emitting diode formed of a compound semiconductor material
JPH0738457B2 (ja) * 1986-07-18 1995-04-26 株式会社東芝 光・電子双安定素子
JP2681352B2 (ja) * 1987-07-31 1997-11-26 信越半導体 株式会社 発光半導体素子
US4864369A (en) * 1988-07-05 1989-09-05 Hewlett-Packard Company P-side up double heterojunction AlGaAs light-emitting diode
US5077588A (en) * 1989-09-29 1991-12-31 Shin-Etsu Handotai Co., Ltd. Multiple wavelength light emitting device

Also Published As

Publication number Publication date
DE69215534T2 (de) 1997-06-12
SE9101395L (sv) 1992-11-09
JPH06502281A (ja) 1994-03-10
DE69215534D1 (de) 1997-01-09
EP0616730A1 (en) 1994-09-28
WO1992020106A1 (en) 1992-11-12
SE468410B (sv) 1993-01-11
EP0616730B1 (en) 1996-11-27
US5151756A (en) 1992-09-29

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