DE69209319T2 - Kollimator mit langer lebensdauer - Google Patents

Kollimator mit langer lebensdauer

Info

Publication number
DE69209319T2
DE69209319T2 DE69209319T DE69209319T DE69209319T2 DE 69209319 T2 DE69209319 T2 DE 69209319T2 DE 69209319 T DE69209319 T DE 69209319T DE 69209319 T DE69209319 T DE 69209319T DE 69209319 T2 DE69209319 T2 DE 69209319T2
Authority
DE
Germany
Prior art keywords
collimator
long life
life
long
life collimator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69209319T
Other languages
English (en)
Other versions
DE69209319D1 (de
Inventor
Steven Hurwitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Publication of DE69209319D1 publication Critical patent/DE69209319D1/de
Application granted granted Critical
Publication of DE69209319T2 publication Critical patent/DE69209319T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69209319T 1991-12-30 1992-12-29 Kollimator mit langer lebensdauer Expired - Fee Related DE69209319T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/816,030 US5223108A (en) 1991-12-30 1991-12-30 Extended lifetime collimator
PCT/US1992/011272 WO1993013542A1 (en) 1991-12-30 1992-12-29 Extended lifetime collimator

Publications (2)

Publication Number Publication Date
DE69209319D1 DE69209319D1 (de) 1996-04-25
DE69209319T2 true DE69209319T2 (de) 1996-11-07

Family

ID=25219508

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69209319T Expired - Fee Related DE69209319T2 (de) 1991-12-30 1992-12-29 Kollimator mit langer lebensdauer

Country Status (10)

Country Link
US (1) US5223108A (de)
EP (1) EP0619916B1 (de)
JP (1) JP3469239B2 (de)
KR (1) KR100260663B1 (de)
AU (1) AU3335993A (de)
CA (1) CA2125180A1 (de)
DE (1) DE69209319T2 (de)
SG (1) SG49698A1 (de)
TW (1) TW221064B (de)
WO (1) WO1993013542A1 (de)

Families Citing this family (64)

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US6521106B1 (en) 1990-01-29 2003-02-18 Novellus Systems, Inc. Collimated deposition apparatus
IL102120A (en) * 1992-06-05 1994-08-26 Persys Technology Ltd Mask, assembly and method that enable quality control of equipment for the production of semiconductor slice chips
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US5346601A (en) * 1993-05-11 1994-09-13 Andrew Barada Sputter coating collimator with integral reactive gas distribution
US5403459A (en) * 1993-05-17 1995-04-04 Applied Materials, Inc. Cleaning of a PVD chamber containing a collimator
US5362372A (en) * 1993-06-11 1994-11-08 Applied Materials, Inc. Self cleaning collimator
KR960005377Y1 (ko) * 1993-06-24 1996-06-28 현대전자산업 주식회사 반도체 소자 제조용 스퍼터링 장치
JPH0718423A (ja) * 1993-07-06 1995-01-20 Japan Energy Corp 薄膜形成装置
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
DE4325051C1 (de) * 1993-07-26 1994-07-07 Siemens Ag Anordnung zur Abscheidung einer Schicht auf einer Substratscheibe durch Kathodenstrahlzerstäuben und Verfahren zu deren Betrieb
US5382339A (en) * 1993-09-17 1995-01-17 Applied Materials, Inc. Shield and collimator pasting deposition chamber with a side pocket for pasting the bottom of the collimator
US5478455A (en) * 1993-09-17 1995-12-26 Varian Associates, Inc. Method for controlling a collimated sputtering source
US5958193A (en) * 1994-02-01 1999-09-28 Vlsi Technology, Inc. Sputter deposition with mobile collimator
US5484640A (en) * 1994-02-16 1996-01-16 Eldim, Inc. Honeycomb structure having stiffening ribs and method and apparatus for making same
KR970009828B1 (en) * 1994-02-23 1997-06-18 Sansung Electronics Co Ltd Fabrication method of collimator
US5711858A (en) * 1994-04-12 1998-01-27 International Business Machines Corporation Process for depositing a conductive thin film upon an integrated circuit substrate
EP0682125A1 (de) * 1994-05-11 1995-11-15 Applied Materials, Inc. Kontrolle eines Materials, welches von einem Target zerstäubt wird
KR960002532A (ko) * 1994-06-29 1996-01-26 김광호 스퍼터링 장치
US5616218A (en) * 1994-09-12 1997-04-01 Matereials Research Corporation Modification and selection of the magnetic properties of magnetic recording media through selective control of the crystal texture of the recording layer
US5516403A (en) * 1994-12-16 1996-05-14 Applied Materials Reversing orientation of sputtering screen to avoid contamination
US5527438A (en) * 1994-12-16 1996-06-18 Applied Materials, Inc. Cylindrical sputtering shield
US5643428A (en) * 1995-02-01 1997-07-01 Advanced Micro Devices, Inc. Multiple tier collimator system for enhanced step coverage and uniformity
US5885425A (en) * 1995-06-06 1999-03-23 International Business Machines Corporation Method for selective material deposition on one side of raised or recessed features
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US5705042A (en) * 1996-01-29 1998-01-06 Micron Technology, Inc. Electrically isolated collimator and method
US5985102A (en) * 1996-01-29 1999-11-16 Micron Technology, Inc. Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using
US5863396A (en) * 1996-10-25 1999-01-26 Applied Materials, Inc. Method and apparatus for fabricating a wafer spacing mask on a substrate support chuck
GB9701114D0 (en) * 1997-01-20 1997-03-12 Coherent Optics Europ Ltd Three-dimensional masking method for control of optical coating thickness
US6168832B1 (en) 1997-01-20 2001-01-02 Coherent, Inc. Three-dimensional masking method for control of coating thickness
EP0860513A3 (de) * 1997-02-19 2000-01-12 Canon Kabushiki Kaisha Vorrichtung und Verfahren zum Herstellen von Dünnschichten
US6000270A (en) * 1997-06-03 1999-12-14 Sjm Engineering, Inc. Collimator having tapered edges and method of making the same
US6030513A (en) * 1997-12-05 2000-02-29 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
US6096404A (en) * 1997-12-05 2000-08-01 Applied Materials, Inc. Full face mask for capacitance-voltage measurements
US6036821A (en) * 1998-01-29 2000-03-14 International Business Machines Corporation Enhanced collimated sputtering apparatus and its method of use
US6269765B1 (en) * 1998-02-11 2001-08-07 Silicon Genesis Corporation Collection devices for plasma immersion ion implantation
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6287436B1 (en) 1998-02-27 2001-09-11 Innovent, Inc. Brazed honeycomb collimator
US6482301B1 (en) 1998-06-04 2002-11-19 Seagate Technology, Inc. Target shields for improved magnetic properties of a recording medium
US6592728B1 (en) * 1998-08-04 2003-07-15 Veeco-Cvc, Inc. Dual collimated deposition apparatus and method of use
US6261406B1 (en) * 1999-01-11 2001-07-17 Lsi Logic Corporation Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface
US6458723B1 (en) 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
JP3529676B2 (ja) * 1999-09-16 2004-05-24 株式会社東芝 半導体製造装置および半導体装置の製造方法
DE10340147B4 (de) * 2002-08-27 2014-04-10 Kyocera Corp. Trockenätzverfahren und Trockenätzvorrichtung
US7556741B2 (en) * 2002-08-28 2009-07-07 Kyocera Corporation Method for producing a solar cell
US7459098B2 (en) * 2002-08-28 2008-12-02 Kyocera Corporation Dry etching apparatus, dry etching method, and plate and tray used therein
US20040086639A1 (en) * 2002-09-24 2004-05-06 Grantham Daniel Harrison Patterned thin-film deposition using collimating heated mask asembly
JP4200290B2 (ja) * 2003-05-21 2008-12-24 パナソニック株式会社 マスクユニット
JP4923450B2 (ja) * 2005-07-01 2012-04-25 富士ゼロックス株式会社 バッチ処理支援装置および方法、プログラム
US20070084720A1 (en) * 2005-07-13 2007-04-19 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070012559A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Method of improving magnetron sputtering of large-area substrates using a removable anode
US20070012663A1 (en) * 2005-07-13 2007-01-18 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070012558A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Magnetron sputtering system for large-area substrates
US20070051616A1 (en) * 2005-09-07 2007-03-08 Le Hienminh H Multizone magnetron assembly
US7588668B2 (en) 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
US20070056843A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070056850A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Large-area magnetron sputtering chamber with individually controlled sputtering zones
TW201213572A (en) * 2010-09-29 2012-04-01 Hon Hai Prec Ind Co Ltd Sputtering apparatus
JP5985581B2 (ja) * 2014-11-05 2016-09-06 株式会社東芝 処理装置及びコリメータ
US9543126B2 (en) * 2014-11-26 2017-01-10 Applied Materials, Inc. Collimator for use in substrate processing chambers
US9887073B2 (en) * 2015-02-13 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition system and physical vapor depositing method using the same
JP7034912B2 (ja) * 2015-10-27 2022-03-14 アプライド マテリアルズ インコーポレイテッド Ｐｖｄスパッタチャンバ向けのバイアス可能なフラックスオプティマイザ／コリメータ
JP6088083B1 (ja) * 2016-03-14 2017-03-01 株式会社東芝 処理装置及びコリメータ
KR102056735B1 (ko) * 2016-03-14 2019-12-17 가부시끼가이샤 도시바 처리 장치 및 콜리메이터
US11424112B2 (en) * 2017-11-03 2022-08-23 Varian Semiconductor Equipment Associates, Inc. Transparent halo assembly for reduced particle generation

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CA738393A (en) * 1966-07-12 W. Gow Gordon Sputtering mask
US3483114A (en) * 1967-05-01 1969-12-09 Victory Eng Corp Rf sputtering apparatus including a wave reflector positioned behind the target
GB1314040A (en) * 1970-10-29 1973-04-18 Howorth Air Conditioning Ltd Textile yarn processing machines
US3864239A (en) * 1974-04-22 1975-02-04 Nasa Multitarget sequential sputtering apparatus
US3932232A (en) * 1974-11-29 1976-01-13 Bell Telephone Laboratories, Incorporated Suppression of X-ray radiation during sputter-etching
DE2739058C3 (de) * 1977-08-30 1980-04-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Mehrlagige Maske für Sputter-Lochmaskensysteme
US4322277A (en) * 1980-11-17 1982-03-30 Rca Corporation Step mask for substrate sputtering
JPS5867016A (ja) * 1981-10-19 1983-04-21 Nippon Telegr & Teleph Corp <Ntt> 薄膜の製造方法
JPS59220912A (ja) * 1983-05-31 1984-12-12 Fujitsu Ltd スパツタリング装置
US4508612A (en) * 1984-03-07 1985-04-02 International Business Machines Corporation Shield for improved magnetron sputter deposition into surface recesses
JPS6175514A (ja) * 1984-09-21 1986-04-17 Hitachi Ltd 処理装置
KR900001825B1 (ko) * 1984-11-14 1990-03-24 가부시끼가이샤 히다찌세이사꾸쇼 성막 지향성을 고려한 스퍼터링장치
JPH0348204Y2 (de) * 1985-03-20 1991-10-15
JPS61243167A (ja) * 1985-04-17 1986-10-29 Anelva Corp スパツタ装置
US4661203A (en) * 1985-06-28 1987-04-28 Control Data Corporation Low defect etching of patterns using plasma-stencil mask
JPS627855A (ja) * 1985-07-05 1987-01-14 Hitachi Ltd スパツタリング装置
JPS6217173A (ja) * 1985-07-15 1987-01-26 Ulvac Corp 平板マグネトロンスパツタ装置
JPS63176470A (ja) * 1987-01-14 1988-07-20 Fujitsu Ltd スパツタ装置
JPH0660391B2 (ja) * 1987-06-11 1994-08-10 日電アネルバ株式会社 スパッタリング装置
US4824544A (en) * 1987-10-29 1989-04-25 International Business Machines Corporation Large area cathode lift-off sputter deposition device
US4830723A (en) * 1988-06-22 1989-05-16 Avx Corporation Method of encapsulating conductors
DE69129081T2 (de) * 1990-01-29 1998-07-02 Varian Associates Gerät und Verfahren zur Niederschlagung durch einen Kollimator

Also Published As

Publication number Publication date
DE69209319D1 (de) 1996-04-25
JPH07502786A (ja) 1995-03-23
US5223108A (en) 1993-06-29
EP0619916B1 (de) 1996-03-20
SG49698A1 (en) 1998-06-15
TW221064B (de) 1994-02-11
KR940704051A (ko) 1994-12-12
KR100260663B1 (ko) 2000-07-01
EP0619916A1 (de) 1994-10-19
JP3469239B2 (ja) 2003-11-25
CA2125180A1 (en) 1993-07-08
WO1993013542A1 (en) 1993-07-08
AU3335993A (en) 1993-07-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TOKYO ELECTRON LTD., TOKIO/TOKYO, JP

8339 Ceased/non-payment of the annual fee