KR960002532A - 스퍼터링 장치 - Google Patents

스퍼터링 장치 Download PDF

Info

Publication number
KR960002532A
KR960002532A KR1019940015228A KR19940015228A KR960002532A KR 960002532 A KR960002532 A KR 960002532A KR 1019940015228 A KR1019940015228 A KR 1019940015228A KR 19940015228 A KR19940015228 A KR 19940015228A KR 960002532 A KR960002532 A KR 960002532A
Authority
KR
South Korea
Prior art keywords
electrode
manure
sputtered
substrate
shield
Prior art date
Application number
KR1019940015228A
Other languages
English (en)
Inventor
이재호
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019940015228A priority Critical patent/KR960002532A/ko
Priority to US08/359,658 priority patent/US5536381A/en
Priority to JP6336374A priority patent/JPH0813145A/ja
Priority to DE4446414A priority patent/DE4446414A1/de
Publication of KR960002532A publication Critical patent/KR960002532A/ko

Links

Classifications

    • H01L21/203—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

쉴드부에 거름격자부를 도입하여 증착되는 막의 접착력을 향상시키는 스퍼터링 장치에 관하여 개시한다. 본 발명은 기판을 지지하고 전극으로 사용되는 제1전극과, 상기 제1전극에 대향하여 스퍼터되는 소스물질로 된 타겟과, 상기 타겟에 접착된 제2전극과, 상기 제2전극에 절연되어 하부방향으로 부착된 쉴드부 및 상기 쉴드부에 부착되어 스퍼터되는 입자의 이동궤적을 변경시키는 거름겨자부를 구비하는 스퍼터링 챔버를 포함한다. 본 발명에 의하면, 스퍼터링시 쉴드부 근처에서 이동하는 입자, 예컨대 스퍼터되는 입자 또는 중성화된 플라즈마 이온들은 거름격자부를 통해 이동궤적을 기판에 수직방향으로 전환되어 기판의 전표면에 걸쳐 형성되는 막이 압축응력을 갖게 되어 접착성이 향상된다.

Description

스퍼터링 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 의한 스퍼터링 장치를 ㅐ략적으로 도시한 도면이다,
제3도는 상기 제2도에 도시한 거름격자부를 확대하여 도시한 도면이다.

Claims (4)

  1. 기판을 지지하고 전극으로 사용되는 제1전극; 상기 제1전극에 대향하여 스퍼터되는 소스물질로 된 타겟; 상기 타겟에 접착된 제2전극; 상기 제2전극에 절연되어 하부방향으로 부착된 쉴드부; 및 상기 쉴드부에 부착되어 스퍼터되는 입자의 이동궤적을 변경시키는 거름격자부를 구비하는 스퍼터링 챔버를 포함하는 것을 특징으로 하는 스퍼터링 장치.
  2. 제1항에 있어서, 상기 거름격자부는 스퍼터되는 입자의 진행영역을 에워싸는 복수개의 링을 갖는 제1거름 격자와 상기 입자의 진행영역의 중앙을 향하도록 방사상으로 배치되는 제2거름격자로 구성되어 결합된 것을 특징으로 하는 스퍼터링 장치.
  3. 제2하 상기 거름격자부는 금속재질로 되어 있는 것을 특징으로 하는 스퍼터링 장치.
  4. 제2항에 있어서, 상기 제1거름격자와 제2거름격자가 결합되면 그 교차각의 각도가 30~90도인 그레이팅 패턴이 되는 것을 특징으로 하는 스퍼터링 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940015228A 1994-06-29 1994-06-29 스퍼터링 장치 KR960002532A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019940015228A KR960002532A (ko) 1994-06-29 1994-06-29 스퍼터링 장치
US08/359,658 US5536381A (en) 1994-06-29 1994-12-20 Sputtering device
JP6336374A JPH0813145A (ja) 1994-06-29 1994-12-22 スパッタリング装置
DE4446414A DE4446414A1 (de) 1994-06-29 1994-12-23 Sputter-Vorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940015228A KR960002532A (ko) 1994-06-29 1994-06-29 스퍼터링 장치

Publications (1)

Publication Number Publication Date
KR960002532A true KR960002532A (ko) 1996-01-26

Family

ID=19386684

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940015228A KR960002532A (ko) 1994-06-29 1994-06-29 스퍼터링 장치

Country Status (4)

Country Link
US (1) US5536381A (ko)
JP (1) JPH0813145A (ko)
KR (1) KR960002532A (ko)
DE (1) DE4446414A1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100234076B1 (ko) * 1996-06-25 1999-12-15 서성기 박막 형성용 스퍼터링 장치
KR100461696B1 (ko) * 2001-11-22 2004-12-14 도레이새한 주식회사 투명성이 우수한 폴리에스테르 필름

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPO712097A0 (en) * 1997-05-30 1997-06-26 Lintek Pty Ltd Vacuum deposition system
DE19734633C2 (de) * 1997-08-11 1999-08-26 Forschungszentrum Juelich Gmbh Hochdruck-Magnetron-Kathode
US20060278520A1 (en) * 2005-06-13 2006-12-14 Lee Eal H Use of DC magnetron sputtering systems

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61577A (ja) * 1984-06-13 1986-01-06 Matsushita Electric Ind Co Ltd スパツタリング装置
JPH0660391B2 (ja) * 1987-06-11 1994-08-10 日電アネルバ株式会社 スパッタリング装置
JPH04371578A (ja) * 1991-06-19 1992-12-24 Sony Corp マグネトロンスパッタリング装置
US5223108A (en) * 1991-12-30 1993-06-29 Materials Research Corporation Extended lifetime collimator
JPH05311419A (ja) * 1992-04-01 1993-11-22 Nec Corp マグネトロン型スパッタ装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100234076B1 (ko) * 1996-06-25 1999-12-15 서성기 박막 형성용 스퍼터링 장치
KR100461696B1 (ko) * 2001-11-22 2004-12-14 도레이새한 주식회사 투명성이 우수한 폴리에스테르 필름

Also Published As

Publication number Publication date
JPH0813145A (ja) 1996-01-16
DE4446414A1 (de) 1996-01-04
US5536381A (en) 1996-07-16

Similar Documents

Publication Publication Date Title
WO1997001653A3 (en) Sputtering shield
DE69833432D1 (de) Verfahren zur reduzierung der einbrennzeit eines sputters, minimierung der sputterpartikel und targetvorrichtung dafür
WO2000020274A3 (en) Ion doping apparatus and method for aerodynamic flow control
EP0947603A3 (en) Film depositing method and apparatus
MY121934A (en) Removal of material by polarized radiation and backside application of radiation
BR9710764A (pt) Remo-Æo de material por radia-Æo aplicada a um ngulo obliquo
SE8200697L (sv) Forfarande och anordning for beskiktning av formdelar genom katodforstoftning
EP0365249A3 (en) Method and apparatus for sputtering
TW263613B (en) Uniform film thickness deposition of sputtered materials
AU2933189A (en) Procedure and apparatus for the coating of materials by means of a pulsating plasma beam
ES8307536A1 (es) "una instalacion de pulverizacion ionica".
WO2004059027A3 (en) Ionic plasma deposition of anti-microbial surfaces and the anti-microbial surfaces resulting therefrom
TW200710248A (en) Low voltage sputtering for large area substrates
WO2002075747A3 (en) Electron beam irradiation apparatus
EP0853330A3 (en) Ionized PVD source to produce uniform low-particle deposition
KR960002532A (ko) 스퍼터링 장치
DE3880135D1 (de) Zerstaeubungsverfahren mittels eines bandfoermigen plasmaflusses und geraet zur handhabung dieses verfahrens.
AU8124382A (en) Fixing lining panels
BR9506288A (pt) Processo de produzir uma cobertura protetora sobre um tubo e mais especificamente em um oleoduto e aparelho e conjunto para sua realização
WO2004018349A3 (fr) Microstructure a surface fonctionnalisee par depot localise d'une couche mince et procede de fabrication associe
EP0034654A1 (en) An apparatus for coating substrates
EP1221495A3 (en) Magnetron sputtering system and photomask blank production method based on the same
FR2565677B1 (fr) Lithium enrobe, procede d'enrobage de lithium metallique et source d'energie utilisant du lithium enrobe.
KR960012308A (ko) 스퍼터된 물질을 균일한 두께의 박막으로 증착하는 장치 및 방법
WO2001093291A3 (en) Dual-layer metal for flat panel display

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid