DE69207303D1 - Fluessiges reinigungsmittel fuer halbleitersubstrat - Google Patents

Fluessiges reinigungsmittel fuer halbleitersubstrat

Info

Publication number
DE69207303D1
DE69207303D1 DE69207303T DE69207303T DE69207303D1 DE 69207303 D1 DE69207303 D1 DE 69207303D1 DE 69207303 T DE69207303 T DE 69207303T DE 69207303 T DE69207303 T DE 69207303T DE 69207303 D1 DE69207303 D1 DE 69207303D1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
liquid cleaner
cleaner
liquid
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69207303T
Other languages
English (en)
Other versions
DE69207303T2 (de
Inventor
Y Sugihara
K Tanaka
M Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Publication of DE69207303D1 publication Critical patent/DE69207303D1/de
Application granted granted Critical
Publication of DE69207303T2 publication Critical patent/DE69207303T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/01—Hydrogen peroxide
    • C01B15/037—Stabilisation by additives

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
DE69207303T 1991-02-28 1992-02-28 Fluessiges reinigungsmittel fuer halbleitersubstrat Expired - Fee Related DE69207303T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP03055736A JP3075290B2 (ja) 1991-02-28 1991-02-28 半導体基板の洗浄液
PCT/JP1992/000219 WO1992016017A1 (en) 1991-02-28 1992-02-28 Cleaning liquid for semiconductor substrate

Publications (2)

Publication Number Publication Date
DE69207303D1 true DE69207303D1 (de) 1996-02-15
DE69207303T2 DE69207303T2 (de) 1996-05-15

Family

ID=13007140

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69207303T Expired - Fee Related DE69207303T2 (de) 1991-02-28 1992-02-28 Fluessiges reinigungsmittel fuer halbleitersubstrat

Country Status (6)

Country Link
US (1) US5302311A (de)
EP (1) EP0528053B1 (de)
JP (1) JP3075290B2 (de)
KR (1) KR100199687B1 (de)
DE (1) DE69207303T2 (de)
WO (1) WO1992016017A1 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW263531B (de) * 1992-03-11 1995-11-21 Mitsubishi Gas Chemical Co
JP3074366B2 (ja) * 1993-02-22 2000-08-07 東京エレクトロン株式会社 処理装置
US5950645A (en) 1993-10-20 1999-09-14 Verteq, Inc. Semiconductor wafer cleaning system
US5656097A (en) * 1993-10-20 1997-08-12 Verteq, Inc. Semiconductor wafer cleaning system
TW274630B (de) * 1994-01-28 1996-04-21 Wako Zunyaku Kogyo Kk
US5637151A (en) * 1994-06-27 1997-06-10 Siemens Components, Inc. Method for reducing metal contamination of silicon wafers during semiconductor manufacturing
JPH08162425A (ja) * 1994-12-06 1996-06-21 Mitsubishi Electric Corp 半導体集積回路装置の製造方法および製造装置
US5712168A (en) * 1995-02-03 1998-01-27 Imec Method for evaluating, monitoring or controlling the efficiency, stability, or exhaustion of a complexing or chelating agent present in a chemical solution used for oxidizing, dissolving, etching or stripping a semiconductor wafer
US5725678A (en) * 1995-03-06 1998-03-10 The Penn State Research Foundation Aqueous-based cleaner for the removal of residue
US5885362A (en) * 1995-07-27 1999-03-23 Mitsubishi Chemical Corporation Method for treating surface of substrate
US6884557B2 (en) * 1995-12-14 2005-04-26 Fuji Photo Film Co., Ltd. Desensitizing treatment liquid for lithographic printing
US5674826A (en) * 1996-01-02 1997-10-07 Mcmullen; Robert W. Cleaning composition
US6905550B2 (en) * 1996-05-06 2005-06-14 Princeton Trade & Technology, Inc. Method of removing organic materials using aqueous cleaning solutions
US6410494B2 (en) * 1996-06-05 2002-06-25 Wako Pure Chemical Industries, Ltd. Cleaning agent
DE19631363C1 (de) * 1996-08-02 1998-02-12 Siemens Ag Wässrige Reinigungslösung für ein Halbleitersubstrat
KR100497835B1 (ko) 1997-01-27 2005-09-08 미쓰비시 가가꾸 가부시키가이샤 표면처리조성물및이를이용한기판의표면처리방법
US6066609A (en) * 1997-07-31 2000-05-23 Siemens Aktiengesellschaft Aqueous solution for cleaning a semiconductor substrate
US5962384A (en) * 1997-10-28 1999-10-05 International Business Machines Corporation Method for cleaning semiconductor devices
US6063205A (en) * 1998-01-28 2000-05-16 Cooper; Steven P. Use of H2 O2 solution as a method of post lap cleaning
JP3111979B2 (ja) 1998-05-20 2000-11-27 日本電気株式会社 ウエハの洗浄方法
TW467953B (en) * 1998-11-12 2001-12-11 Mitsubishi Gas Chemical Co New detergent and cleaning method of using it
SG73683A1 (en) 1998-11-24 2000-06-20 Texas Instruments Inc Stabilized slurry compositions
EP1018759A3 (de) * 1999-01-08 2000-08-30 Interuniversitair Micro-Elektronica Centrum Vzw Chemische Lösung und Verfahren zur Verminderung der Metallkontamination auf der Oberfläche eines Halbleitersubstrats
US6592676B1 (en) 1999-01-08 2003-07-15 Interuniversitair Micro-Elektronica Centrum Chemical solution and method for reducing the metal contamination on the surface of a semiconductor substrate
EP1039518A1 (de) * 1999-03-24 2000-09-27 Interuniversitair Micro-Elektronica Centrum Vzw Chemische Lösung und Verfahren zur Verminderung der Metallkontamination auf der Oberfläche eines Halbleitersubstrats
EP1091395A1 (de) * 1999-09-30 2001-04-11 Interuniversitair Microelektronica Centrum Vzw Reinigungslösung für Behandlung von Halbleitersubstraten
US7456113B2 (en) * 2000-06-26 2008-11-25 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
US6927176B2 (en) 2000-06-26 2005-08-09 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
WO2002051961A2 (en) * 2000-12-22 2002-07-04 Interuniversitair Microelektronica Centrum (Imec) Composition comprising an oxidizing and complexing compound
US20040002430A1 (en) * 2002-07-01 2004-01-01 Applied Materials, Inc. Using a time critical wafer cleaning solution by combining a chelating agent with an oxidizer at point-of-use
EP1562225A4 (de) * 2002-11-08 2007-04-18 Wako Pure Chem Ind Ltd Reinigungszusammensetzung und verfahren zum reinigen damit
US7459005B2 (en) * 2002-11-22 2008-12-02 Akzo Nobel N.V. Chemical composition and method
DE602004009584T2 (de) * 2003-06-27 2008-08-07 Interuniversitair Microelektronica Centrum (Imec) Halbleiterreinigungslösung
US7432233B2 (en) * 2003-12-18 2008-10-07 Interuniversitair Microelektronica Centrum (Imec) Composition and method for treating a semiconductor substrate
US7431775B2 (en) * 2004-04-08 2008-10-07 Arkema Inc. Liquid detergent formulation with hydrogen peroxide
US7169237B2 (en) * 2004-04-08 2007-01-30 Arkema Inc. Stabilization of alkaline hydrogen peroxide
US7323421B2 (en) * 2004-06-16 2008-01-29 Memc Electronic Materials, Inc. Silicon wafer etching process and composition
US7045493B2 (en) * 2004-07-09 2006-05-16 Arkema Inc. Stabilized thickened hydrogen peroxide containing compositions
JP4431461B2 (ja) * 2004-08-09 2010-03-17 オプトレックス株式会社 表示装置の製造方法
US7776713B2 (en) * 2007-05-30 2010-08-17 Macronix International Co., Ltd. Etching solution, method of surface modification of semiconductor substrate and method of forming shallow trench isolation
SI2225175T1 (sl) 2007-12-12 2013-04-30 Akzo Nobel N.V. Stabilizirane raztopine vodikovega peroksida
JP5278492B2 (ja) * 2010-06-16 2013-09-04 株式会社デンソー 半導体装置の製造方法
US10935896B2 (en) * 2016-07-25 2021-03-02 Applied Materials, Inc. Cleaning solution mixing system with ultra-dilute cleaning solution and method of operation thereof

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL130828C (de) * 1959-06-03
US3234140A (en) * 1964-06-05 1966-02-08 Monsanto Co Stabilization of peroxy solutions
US3701825A (en) * 1970-10-23 1972-10-31 Fmc Corp Stabilization of hydrogen peroxide with ethylenediamine tetra (methylenephosphonic acid)
JPS5634637B2 (de) * 1973-07-02 1981-08-11
JPS5921994B2 (ja) * 1977-09-03 1984-05-23 貴和子 佐藤 飯と墨とで布地を染める方法
US4304762A (en) * 1978-09-27 1981-12-08 Lever Brothers Company Stabilization of hydrogen peroxide
US4497725A (en) * 1980-04-01 1985-02-05 Interox Chemicals Ltd. Aqueous bleach compositions
US4614646A (en) * 1984-12-24 1986-09-30 The Dow Chemical Company Stabilization of peroxide systems in the presence of alkaline earth metal ions
JPS61294824A (ja) * 1985-06-21 1986-12-25 Nec Corp 半導体集積回路の製造装置
GB8701759D0 (en) * 1987-01-27 1987-03-04 Laporte Industries Ltd Processing of semi-conductor materials
JPH01154523A (ja) * 1987-12-11 1989-06-16 Fujitsu Ltd シリコン層用洗浄液
US4808259A (en) * 1988-01-25 1989-02-28 Intel Corporation Plasma etching process for MOS circuit pregate etching utiliizing a multi-step power reduction recipe
JPH024991A (ja) * 1988-06-23 1990-01-09 Kao Corp 金属洗浄用薬剤
DE3822350A1 (de) * 1988-07-01 1990-01-04 Siemens Ag Verfahren zum entfernen von metall-verunreinigungen auf halbleiterkristalloberflaechen
JPH02225684A (ja) * 1989-02-27 1990-09-07 C Uyemura & Co Ltd 銅又は銅合金のスマット除去剤及び除去方法
JP2850395B2 (ja) * 1989-08-31 1999-01-27 三菱瓦斯化学株式会社 過酸化水素組成物
JP3060499B2 (ja) * 1989-09-01 2000-07-10 三菱瓦斯化学株式会社 過酸化水素の製造方法
CA2059841A1 (en) * 1991-01-24 1992-07-25 Ichiro Hayashida Surface treating solutions and cleaning method

Also Published As

Publication number Publication date
KR100199687B1 (ko) 1999-06-15
JPH06116770A (ja) 1994-04-26
US5302311A (en) 1994-04-12
EP0528053A4 (en) 1993-06-30
DE69207303T2 (de) 1996-05-15
EP0528053B1 (de) 1996-01-03
JP3075290B2 (ja) 2000-08-14
EP0528053A1 (de) 1993-02-24
WO1992016017A1 (en) 1992-09-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee