DE69206187T2 - Gerät für Plasmaverfahren. - Google Patents

Gerät für Plasmaverfahren.

Info

Publication number
DE69206187T2
DE69206187T2 DE69206187T DE69206187T DE69206187T2 DE 69206187 T2 DE69206187 T2 DE 69206187T2 DE 69206187 T DE69206187 T DE 69206187T DE 69206187 T DE69206187 T DE 69206187T DE 69206187 T2 DE69206187 T2 DE 69206187T2
Authority
DE
Germany
Prior art keywords
processing chamber
electron
electron supply
generating
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69206187T
Other languages
German (de)
English (en)
Other versions
DE69206187D1 (de
Inventor
Shuuji Mochizuki
Kazuya Nagaseki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE69206187D1 publication Critical patent/DE69206187D1/de
Publication of DE69206187T2 publication Critical patent/DE69206187T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE69206187T 1991-04-26 1992-04-02 Gerät für Plasmaverfahren. Expired - Lifetime DE69206187T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3122878A JPH04326725A (ja) 1991-04-26 1991-04-26 プラズマ装置

Publications (2)

Publication Number Publication Date
DE69206187D1 DE69206187D1 (de) 1996-01-04
DE69206187T2 true DE69206187T2 (de) 1996-05-02

Family

ID=14846876

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69206187T Expired - Lifetime DE69206187T2 (de) 1991-04-26 1992-04-02 Gerät für Plasmaverfahren.

Country Status (6)

Country Link
US (1) US5368676A (enExample)
EP (1) EP0510401B1 (enExample)
JP (1) JPH04326725A (enExample)
KR (1) KR0177590B1 (enExample)
DE (1) DE69206187T2 (enExample)
TW (1) TW201854B (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5122431A (en) * 1988-09-14 1992-06-16 Fujitsu Limited Thin film formation apparatus
US5565036A (en) * 1994-01-19 1996-10-15 Tel America, Inc. Apparatus and method for igniting plasma in a process module
WO1997001655A1 (en) * 1995-06-29 1997-01-16 Lam Research Corporation A scalable helicon wave plasma processing device with a non-cylindrical source chamber
US6027663A (en) * 1995-08-28 2000-02-22 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates
AU6863696A (en) * 1995-08-28 1997-03-19 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates
US5882538A (en) * 1995-08-28 1999-03-16 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates
EP0783174B1 (de) * 1995-10-27 2006-12-13 Applied Materials GmbH & Co. KG Vorrichtung zum Beschichten eines Substrats
DE19540543A1 (de) * 1995-10-31 1997-05-07 Leybold Ag Vorrichtung zum Beschichten eines Substrats mit Hilfe des Chemical-Vapor-Deposition-Verfahrens
US5917285A (en) * 1996-07-24 1999-06-29 Georgia Tech Research Corporation Apparatus and method for reducing operating voltage in gas discharge devices
US6258287B1 (en) 1996-08-28 2001-07-10 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment
US6033587A (en) * 1996-09-20 2000-03-07 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching and cleaning of substrates in the positive column of a plasma
KR100496809B1 (ko) * 1997-08-26 2005-09-06 인천광역시 플라즈마방전에의한배가스처리장치
JP4287936B2 (ja) * 1999-02-01 2009-07-01 中外炉工業株式会社 真空成膜装置
US7129694B2 (en) * 2002-05-23 2006-10-31 Applied Materials, Inc. Large substrate test system
DE10227332A1 (de) * 2002-06-19 2004-01-15 Akt Electron Beam Technology Gmbh Ansteuervorrichtung mit verbesserten Testeneigenschaften
US7032536B2 (en) * 2002-10-11 2006-04-25 Sharp Kabushiki Kaisha Thin film formation apparatus including engagement members for support during thermal expansion
US6833717B1 (en) * 2004-02-12 2004-12-21 Applied Materials, Inc. Electron beam test system with integrated substrate transfer module
US20060038554A1 (en) * 2004-02-12 2006-02-23 Applied Materials, Inc. Electron beam test system stage
US7355418B2 (en) * 2004-02-12 2008-04-08 Applied Materials, Inc. Configurable prober for TFT LCD array test
US7319335B2 (en) * 2004-02-12 2008-01-15 Applied Materials, Inc. Configurable prober for TFT LCD array testing
US7075323B2 (en) * 2004-07-29 2006-07-11 Applied Materials, Inc. Large substrate test system
US7535238B2 (en) * 2005-04-29 2009-05-19 Applied Materials, Inc. In-line electron beam test system
CN100358098C (zh) * 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 半导体工艺件处理装置
US7569818B2 (en) * 2006-03-14 2009-08-04 Applied Materials, Inc. Method to reduce cross talk in a multi column e-beam test system
US7786742B2 (en) 2006-05-31 2010-08-31 Applied Materials, Inc. Prober for electronic device testing on large area substrates
US7602199B2 (en) 2006-05-31 2009-10-13 Applied Materials, Inc. Mini-prober for TFT-LCD testing
US9111728B2 (en) 2011-04-11 2015-08-18 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US9177756B2 (en) * 2011-04-11 2015-11-03 Lam Research Corporation E-beam enhanced decoupled source for semiconductor processing
US8900403B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8951384B2 (en) 2011-10-20 2015-02-10 Applied Materials, Inc. Electron beam plasma source with segmented beam dump for uniform plasma generation
US20130098555A1 (en) * 2011-10-20 2013-04-25 Applied Materials, Inc. Electron beam plasma source with profiled conductive fins for uniform plasma generation
US9129777B2 (en) 2011-10-20 2015-09-08 Applied Materials, Inc. Electron beam plasma source with arrayed plasma sources for uniform plasma generation
US9443700B2 (en) 2013-03-12 2016-09-13 Applied Materials, Inc. Electron beam plasma source with segmented suppression electrode for uniform plasma generation
TWI573700B (zh) * 2015-02-13 2017-03-11 rong-gui Deng Assembly equipment for loading equipment and its applications

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2438531C3 (de) * 1974-08-10 1982-04-08 Fa. Carl Freudenberg, 6940 Weinheim Separatorenmaterial
US4175029A (en) * 1978-03-16 1979-11-20 Dmitriev Jury A Apparatus for ion plasma coating of articles
US4269137A (en) * 1979-03-19 1981-05-26 Xerox Corporation Pretreatment of substrates prior to thin film deposition
US4333814A (en) * 1979-12-26 1982-06-08 Western Electric Company, Inc. Methods and apparatus for improving an RF excited reactive gas plasma
DE61906T1 (de) * 1981-03-26 1983-05-26 Inoue-Japax Research Inc., Yokohama, Kanagawa Verfahren und vorrichtung zur bearbeitung eines werkstueckes mit energiereichen teilchen und ein auf diese weise bearbeitetes produkt.
JPS6010731A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd プラズマエツチング装置
CH664768A5 (de) * 1985-06-20 1988-03-31 Balzers Hochvakuum Verfahren zur beschichtung von substraten in einer vakuumkammer.
DE3614398A1 (de) * 1985-07-01 1987-01-08 Balzers Hochvakuum Anordnung zum behandeln von werkstuecken mit einer evakuierbaren kammer
YU46728B (sh) * 1986-10-23 1994-04-05 VUJO dr. MILJEVIĆ Jonsko-elektronski izvor sa šupljom anodom
US4878995A (en) * 1987-07-02 1989-11-07 Kabushiki Kaisha Toshiba Method of dry etching and apparatus for use in such method
EP0306612B2 (de) * 1987-08-26 1996-02-28 Balzers Aktiengesellschaft Verfahren zur Aufbringung von Schichten auf Substraten
JPH01270320A (ja) * 1988-04-22 1989-10-27 Seiko Epson Corp 絶縁薄膜堆積装置
JPH0752635B2 (ja) * 1988-10-18 1995-06-05 日新電機株式会社 イオン源装置
DE69111758T2 (de) * 1990-03-02 1995-12-07 Varian Associates Gerät zur aufladungsneutralisierung in einem ionenimplantierungssystem.
JP2892787B2 (ja) * 1990-07-20 1999-05-17 東京エレクトロン株式会社 電気信号の抽出方法

Also Published As

Publication number Publication date
US5368676A (en) 1994-11-29
KR0177590B1 (ko) 1999-04-15
TW201854B (enExample) 1993-03-11
KR920020614A (ko) 1992-11-21
EP0510401A1 (en) 1992-10-28
DE69206187D1 (de) 1996-01-04
JPH04326725A (ja) 1992-11-16
EP0510401B1 (en) 1995-11-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition