AU6863696A - Method and apparatus for low energy electron enhanced etching of substrates - Google Patents

Method and apparatus for low energy electron enhanced etching of substrates

Info

Publication number
AU6863696A
AU6863696A AU68636/96A AU6863696A AU6863696A AU 6863696 A AU6863696 A AU 6863696A AU 68636/96 A AU68636/96 A AU 68636/96A AU 6863696 A AU6863696 A AU 6863696A AU 6863696 A AU6863696 A AU 6863696A
Authority
AU
Australia
Prior art keywords
substrates
low energy
energy electron
enhanced etching
electron enhanced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU68636/96A
Inventor
Dmitri A. Choutov
Harry P. Gillis
Kevin P. Martin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Georgia Tech Research Corp
Original Assignee
Georgia Tech Research Institute
Georgia Tech Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Georgia Tech Research Institute, Georgia Tech Research Corp filed Critical Georgia Tech Research Institute
Publication of AU6863696A publication Critical patent/AU6863696A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
AU68636/96A 1995-08-28 1996-08-28 Method and apparatus for low energy electron enhanced etching of substrates Abandoned AU6863696A (en)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US283795P 1995-08-28 1995-08-28
US286295P 1995-08-28 1995-08-28
US286195P 1995-08-28 1995-08-28
US002837 1995-08-28
US002862 1995-08-28
US002861 1995-08-28
US2062996P 1996-06-27 1996-06-27
US020629 1996-06-27
US2236496P 1996-07-24 1996-07-24
US022364 1996-07-24
PCT/US1996/013915 WO1997008362A1 (en) 1995-08-28 1996-08-28 Method and apparatus for low energy electron enhanced etching of substrates

Publications (1)

Publication Number Publication Date
AU6863696A true AU6863696A (en) 1997-03-19

Family

ID=27532981

Family Applications (1)

Application Number Title Priority Date Filing Date
AU68636/96A Abandoned AU6863696A (en) 1995-08-28 1996-08-28 Method and apparatus for low energy electron enhanced etching of substrates

Country Status (2)

Country Link
AU (1) AU6863696A (en)
WO (1) WO1997008362A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5917285A (en) * 1996-07-24 1999-06-29 Georgia Tech Research Corporation Apparatus and method for reducing operating voltage in gas discharge devices
US6033587A (en) 1996-09-20 2000-03-07 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching and cleaning of substrates in the positive column of a plasma
MXPA01005602A (en) * 1998-12-03 2002-04-24 Georgia Tech Res Inst Method and apparatus for low energy electron enhanced etching and cleaning of substrates.

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4450787A (en) * 1982-06-03 1984-05-29 Rca Corporation Glow discharge plasma deposition of thin films
US4496881A (en) * 1982-09-29 1985-01-29 Tetra Pak Developpement Sa Method of cold cathode replenishment in electron beam apparatus and replenishable cold cathode assembly
US4874459A (en) * 1988-10-17 1989-10-17 The Regents Of The University Of California Low damage-producing, anisotropic, chemically enhanced etching method and apparatus
US5039376A (en) * 1989-09-19 1991-08-13 Stefan Zukotynski Method and apparatus for the plasma etching, substrate cleaning, or deposition of materials by D.C. glow discharge
JPH04326725A (en) * 1991-04-26 1992-11-16 Tokyo Electron Ltd Plasma apparatus
US5457298A (en) * 1993-07-27 1995-10-10 Tulip Memory Systems, Inc. Coldwall hollow-cathode plasma device for support of gas discharges

Also Published As

Publication number Publication date
WO1997008362A1 (en) 1997-03-06

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