DE69203737T2 - Verfahren und Vorrichtung zur Kristallzüchtung. - Google Patents
Verfahren und Vorrichtung zur Kristallzüchtung.Info
- Publication number
- DE69203737T2 DE69203737T2 DE69203737T DE69203737T DE69203737T2 DE 69203737 T2 DE69203737 T2 DE 69203737T2 DE 69203737 T DE69203737 T DE 69203737T DE 69203737 T DE69203737 T DE 69203737T DE 69203737 T2 DE69203737 T2 DE 69203737T2
- Authority
- DE
- Germany
- Prior art keywords
- seed crystal
- crucible
- central axis
- ingot
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 title claims description 92
- 238000000034 method Methods 0.000 title claims description 34
- 235000012431 wafers Nutrition 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 16
- 239000002994 raw material Substances 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000007710 freezing Methods 0.000 claims description 6
- 230000008014 freezing Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 239000012768 molten material Substances 0.000 claims 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- ZUGYBSSWYZCQSV-UHFFFAOYSA-N indium(3+);phosphite Chemical compound [In+3].[O-]P([O-])[O-] ZUGYBSSWYZCQSV-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/646,125 US5123996A (en) | 1991-01-28 | 1991-01-28 | Crystal growth method and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69203737D1 DE69203737D1 (de) | 1995-09-07 |
| DE69203737T2 true DE69203737T2 (de) | 1996-04-04 |
Family
ID=24591858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69203737T Expired - Lifetime DE69203737T2 (de) | 1991-01-28 | 1992-01-17 | Verfahren und Vorrichtung zur Kristallzüchtung. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5123996A (enExample) |
| EP (1) | EP0497482B1 (enExample) |
| JP (1) | JPH04362084A (enExample) |
| KR (1) | KR100190771B1 (enExample) |
| DE (1) | DE69203737T2 (enExample) |
| HK (1) | HK78196A (enExample) |
| TW (1) | TW288155B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69934643T2 (de) * | 1998-03-31 | 2007-10-25 | Nippon Mining & Metals Co., Ltd. | Verfahren zur herstellung eines einkristalls mit halbleitender zusammensetzung |
| WO2011050170A2 (en) * | 2009-10-22 | 2011-04-28 | Advanced Renewable Energy Company Llc | Crystal growth methods and systems |
| KR101198163B1 (ko) | 2011-01-26 | 2012-11-12 | 디케이아즈텍 주식회사 | 타원형 도가니를 이용한 카이로플러스법에 의한 사파이어 단결정 제조 장치 |
| JP2012212851A (ja) | 2011-03-18 | 2012-11-01 | Ricoh Co Ltd | プリント基板、画像形成装置及びプリント基板の再利用回数の認識方法 |
| JP7155968B2 (ja) * | 2018-12-04 | 2022-10-19 | Tdk株式会社 | 単結晶育成用ルツボ及び単結晶製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2116916A5 (fr) * | 1970-12-11 | 1972-07-21 | Radiotechnique Compelec | Procede de fabrication de monocristaux de composes semiconducteurs |
| FR2175594B1 (enExample) * | 1972-03-15 | 1974-09-13 | Radiotechnique Compelec | |
| US3944393A (en) * | 1973-11-21 | 1976-03-16 | Monsanto Company | Apparatus for horizontal production of single crystal structure |
| US4404172A (en) * | 1981-01-05 | 1983-09-13 | Western Electric Company, Inc. | Method and apparatus for forming and growing a single crystal of a semiconductor compound |
| US4343662A (en) * | 1981-03-31 | 1982-08-10 | Atlantic Richfield Company | Manufacturing semiconductor wafer devices by simultaneous slicing and etching |
| US4714101A (en) * | 1981-04-02 | 1987-12-22 | United Technologies Corporation | Method and apparatus for epitaxial solidification |
| JPS6221786A (ja) * | 1985-07-18 | 1987-01-30 | Hitachi Cable Ltd | 横型ボ−ト法による３−ｖ族化合物半導体単結晶製造装置のボ−ト及びこれに収容される種結晶 |
| JPS63182288A (ja) * | 1987-01-22 | 1988-07-27 | Mitsubishi Metal Corp | ３−５族化合物単結晶の製造方法 |
| JP2723249B2 (ja) * | 1988-04-28 | 1998-03-09 | 日本電信電話株式会社 | 結晶育成方法および結晶育成用るつぼ |
| US4946542A (en) * | 1988-12-05 | 1990-08-07 | At&T Bell Laboratories | Crystal growth method in crucible with step portion |
| US4966645A (en) * | 1989-12-04 | 1990-10-30 | At&T Bell Laboratories | Crystal growth method and apparatus |
-
1991
- 1991-01-28 US US07/646,125 patent/US5123996A/en not_active Expired - Lifetime
- 1991-12-03 TW TW080109509A patent/TW288155B/zh active
-
1992
- 1992-01-17 EP EP92300442A patent/EP0497482B1/en not_active Expired - Lifetime
- 1992-01-17 JP JP4025906A patent/JPH04362084A/ja active Pending
- 1992-01-17 DE DE69203737T patent/DE69203737T2/de not_active Expired - Lifetime
- 1992-01-27 KR KR1019920001104A patent/KR100190771B1/ko not_active Expired - Lifetime
-
1996
- 1996-05-02 HK HK78196A patent/HK78196A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0497482A1 (en) | 1992-08-05 |
| EP0497482B1 (en) | 1995-08-02 |
| TW288155B (enExample) | 1996-10-11 |
| KR920014956A (ko) | 1992-08-26 |
| HK78196A (en) | 1996-05-10 |
| KR100190771B1 (ko) | 1999-06-01 |
| DE69203737D1 (de) | 1995-09-07 |
| JPH04362084A (ja) | 1992-12-15 |
| US5123996A (en) | 1992-06-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |