KR100190771B1 - 결정 성장 방법 및 장치 - Google Patents

결정 성장 방법 및 장치 Download PDF

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Publication number
KR100190771B1
KR100190771B1 KR1019920001104A KR920001104A KR100190771B1 KR 100190771 B1 KR100190771 B1 KR 100190771B1 KR 1019920001104 A KR1019920001104 A KR 1019920001104A KR 920001104 A KR920001104 A KR 920001104A KR 100190771 B1 KR100190771 B1 KR 100190771B1
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KR
South Korea
Prior art keywords
crystal
ingot
crucible
seed
seed crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019920001104A
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English (en)
Korean (ko)
Other versions
KR920014956A (ko
Inventor
무하메드아프잘샤히드
Original Assignee
에이 티 앤드 티 코포레이션
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Publication of KR920014956A publication Critical patent/KR920014956A/ko
Application granted granted Critical
Publication of KR100190771B1 publication Critical patent/KR100190771B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1019920001104A 1991-01-28 1992-01-27 결정 성장 방법 및 장치 Expired - Lifetime KR100190771B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/646,125 US5123996A (en) 1991-01-28 1991-01-28 Crystal growth method and apparatus
US646,125 1991-01-28

Publications (2)

Publication Number Publication Date
KR920014956A KR920014956A (ko) 1992-08-26
KR100190771B1 true KR100190771B1 (ko) 1999-06-01

Family

ID=24591858

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920001104A Expired - Lifetime KR100190771B1 (ko) 1991-01-28 1992-01-27 결정 성장 방법 및 장치

Country Status (7)

Country Link
US (1) US5123996A (enExample)
EP (1) EP0497482B1 (enExample)
JP (1) JPH04362084A (enExample)
KR (1) KR100190771B1 (enExample)
DE (1) DE69203737T2 (enExample)
HK (1) HK78196A (enExample)
TW (1) TW288155B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101198163B1 (ko) 2011-01-26 2012-11-12 디케이아즈텍 주식회사 타원형 도가니를 이용한 카이로플러스법에 의한 사파이어 단결정 제조 장치

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1571240B1 (en) * 1998-03-31 2010-11-03 Nippon Mining & Metals Co., Ltd. Method for producing compound semiconductor single crystal
WO2011050170A2 (en) * 2009-10-22 2011-04-28 Advanced Renewable Energy Company Llc Crystal growth methods and systems
JP2012212851A (ja) 2011-03-18 2012-11-01 Ricoh Co Ltd プリント基板、画像形成装置及びプリント基板の再利用回数の認識方法
JP7155968B2 (ja) * 2018-12-04 2022-10-19 Tdk株式会社 単結晶育成用ルツボ及び単結晶製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2116916A5 (fr) * 1970-12-11 1972-07-21 Radiotechnique Compelec Procede de fabrication de monocristaux de composes semiconducteurs
FR2175594B1 (enExample) * 1972-03-15 1974-09-13 Radiotechnique Compelec
US3944393A (en) * 1973-11-21 1976-03-16 Monsanto Company Apparatus for horizontal production of single crystal structure
US4404172A (en) * 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
US4343662A (en) * 1981-03-31 1982-08-10 Atlantic Richfield Company Manufacturing semiconductor wafer devices by simultaneous slicing and etching
US4714101A (en) * 1981-04-02 1987-12-22 United Technologies Corporation Method and apparatus for epitaxial solidification
JPS6221786A (ja) * 1985-07-18 1987-01-30 Hitachi Cable Ltd 横型ボ−ト法による３−ｖ族化合物半導体単結晶製造装置のボ−ト及びこれに収容される種結晶
JPS63182288A (ja) * 1987-01-22 1988-07-27 Mitsubishi Metal Corp ３−５族化合物単結晶の製造方法
JP2723249B2 (ja) * 1988-04-28 1998-03-09 日本電信電話株式会社 結晶育成方法および結晶育成用るつぼ
US4946542A (en) * 1988-12-05 1990-08-07 At&T Bell Laboratories Crystal growth method in crucible with step portion
US4966645A (en) * 1989-12-04 1990-10-30 At&T Bell Laboratories Crystal growth method and apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101198163B1 (ko) 2011-01-26 2012-11-12 디케이아즈텍 주식회사 타원형 도가니를 이용한 카이로플러스법에 의한 사파이어 단결정 제조 장치

Also Published As

Publication number Publication date
EP0497482A1 (en) 1992-08-05
HK78196A (en) 1996-05-10
DE69203737D1 (de) 1995-09-07
DE69203737T2 (de) 1996-04-04
JPH04362084A (ja) 1992-12-15
TW288155B (enExample) 1996-10-11
KR920014956A (ko) 1992-08-26
US5123996A (en) 1992-06-23
EP0497482B1 (en) 1995-08-02

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