DE69132079T2 - Einrichtung zur Bildung einer Dünnschicht aus Oxydverbundsupraleiter - Google Patents

Einrichtung zur Bildung einer Dünnschicht aus Oxydverbundsupraleiter

Info

Publication number
DE69132079T2
DE69132079T2 DE69132079T DE69132079T DE69132079T2 DE 69132079 T2 DE69132079 T2 DE 69132079T2 DE 69132079 T DE69132079 T DE 69132079T DE 69132079 T DE69132079 T DE 69132079T DE 69132079 T2 DE69132079 T2 DE 69132079T2
Authority
DE
Germany
Prior art keywords
forming
thin layer
oxide superconductor
superconductor
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69132079T
Other languages
English (en)
Other versions
DE69132079D1 (de
Inventor
Hidenori Nakanishi
Saburo Tanaka
Hideo Itozaki
Shuji Yazu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69132079D1 publication Critical patent/DE69132079D1/de
Application granted granted Critical
Publication of DE69132079T2 publication Critical patent/DE69132079T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0521—Processes for depositing or forming copper oxide superconductor layers by pulsed laser deposition, e.g. laser sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69132079T 1990-08-01 1991-08-01 Einrichtung zur Bildung einer Dünnschicht aus Oxydverbundsupraleiter Expired - Fee Related DE69132079T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20475890 1990-08-01
JP3205526A JPH05804A (ja) 1990-08-01 1991-07-22 大面積複合酸化物超電導薄膜の成膜装置

Publications (2)

Publication Number Publication Date
DE69132079D1 DE69132079D1 (de) 2000-05-04
DE69132079T2 true DE69132079T2 (de) 2000-09-14

Family

ID=26514629

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69132079T Expired - Fee Related DE69132079T2 (de) 1990-08-01 1991-08-01 Einrichtung zur Bildung einer Dünnschicht aus Oxydverbundsupraleiter

Country Status (4)

Country Link
US (2) US5478398A (de)
EP (1) EP0469603B1 (de)
JP (1) JPH05804A (de)
DE (1) DE69132079T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0532492A (ja) * 1991-07-29 1993-02-09 Sumitomo Electric Ind Ltd 複合酸化物超電導薄膜の成膜方法
JP3255469B2 (ja) * 1992-11-30 2002-02-12 三菱電機株式会社 レーザ薄膜形成装置
DE4405598C1 (de) * 1994-02-22 1995-09-21 Deutsche Forsch Luft Raumfahrt Verfahren zum Beschichten und Beschichtungsvorrichtung
CN1134555C (zh) * 1995-10-09 2004-01-14 社团法人高等技术研究院研究组合 大面积金钢石薄膜的制造装置及制造方法
EP0902962B1 (de) * 1996-05-31 2001-09-26 IPEC Precision, Inc. Anlage zum behandeln von substraten mit einem plasmastrahl
US5849371A (en) * 1996-07-22 1998-12-15 Beesley; Dwayne Laser and laser-assisted free electron beam deposition apparatus and method
KR100218690B1 (ko) * 1996-11-07 1999-09-01 정선종 대면적 산화물 박막용 레이저 증착 장치
US5964769A (en) 1997-08-26 1999-10-12 Spinal Concepts, Inc. Surgical cable system and method
US6082296A (en) * 1999-09-22 2000-07-04 Xerox Corporation Thin film deposition chamber
ATE354868T1 (de) * 1999-11-26 2007-03-15 Europ High Temperature Superco Verfahren zur erzeugung einer supraleitfähigen schicht
JP3977038B2 (ja) * 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
EP1910013A2 (de) * 2005-07-13 2008-04-16 Picodeon Ltd OY Strahlungsanordnung
FI20060178L (fi) * 2006-02-23 2007-08-24 Picodeon Ltd Oy Pinnoitusmenetelmä
FI20060177L (fi) * 2006-02-23 2007-08-24 Picodeon Ltd Oy Menetelmä tuottaa hyvälaatuisia pintoja ja hyvälaatuisen pinnan omaava tuote
US20090017318A1 (en) * 2006-02-23 2009-01-15 Picodeon Ltd Oy Coating on a metal substrate and a coated metal product
FI20060181L (fi) * 2006-02-23 2007-08-24 Picodeon Ltd Oy Menetelmä tuottaa pintoja ja materiaalia laserablaation avulla
EP1991388A2 (de) * 2006-02-23 2008-11-19 Picodeon Ltd OY Mit ablationstechnologie verbundene oberflächenbehandlungstechnik und oberflächenbehandlungsvorrichtung
US7954627B2 (en) * 2007-03-23 2011-06-07 Btsystems, Llc Bin transporter system
RU2561975C1 (ru) * 2014-03-31 2015-09-10 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Устройство и способ для нанесения покрытий оболочек тепловыделяющих элементов

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE272737C (de) *
LU52106A1 (de) * 1966-10-05 1968-05-07
US4701592A (en) * 1980-11-17 1987-10-20 Rockwell International Corporation Laser assisted deposition and annealing
US4423701A (en) * 1982-03-29 1984-01-03 Energy Conversion Devices, Inc. Glow discharge deposition apparatus including a non-horizontally disposed cathode
US4518078A (en) * 1982-05-24 1985-05-21 Varian Associates, Inc. Wafer transport system
FR2544752B1 (fr) * 1983-04-25 1985-07-05 Commissariat Energie Atomique Procede de croissance amorphe d'un corps avec cristallisation sous rayonnement
JPS62174370A (ja) * 1986-01-28 1987-07-31 Mitsubishi Electric Corp セラミツクスコ−テイング装置
JPH01177367A (ja) * 1988-01-06 1989-07-13 Semiconductor Energy Lab Co Ltd レーザ光または強光を用いた成膜装置
JP2714833B2 (ja) * 1988-12-18 1998-02-16 日本真空技術株式会社 仕込・取出室
JP2822447B2 (ja) * 1989-05-19 1998-11-11 住友電気工業株式会社 酸化物超電導線材の製造方法および装置
CA2016354C (en) * 1989-05-19 1998-12-08 Noriki Hayashi Method of fabricating oxide superconducting film
DE3938267C2 (de) * 1989-11-17 1997-03-27 Leybold Ag Vorrichtung zum Heizen von Substraten
JPH03174307A (ja) * 1989-11-30 1991-07-29 Chiyoudendou Hatsuden Kanren Kiki Zairyo Gijutsu Kenkyu Kumiai 酸化物超電導体の製造方法
US5124310A (en) * 1990-08-20 1992-06-23 Energy Conversion Devices, Inc. Laser ablation method for depositing fluorinated y-ba-cu-o superconducting film having basal plane alignment of the unit cells deposited on non-lattice-matched substrates

Also Published As

Publication number Publication date
US5478398A (en) 1995-12-26
EP0469603A2 (de) 1992-02-05
EP0469603A3 (en) 1992-06-03
JPH05804A (ja) 1993-01-08
EP0469603B1 (de) 2000-03-29
DE69132079D1 (de) 2000-05-04
US5693146A (en) 1997-12-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee