DE3777635D1 - Anlage zur bildung einer duennschicht. - Google Patents

Anlage zur bildung einer duennschicht.

Info

Publication number
DE3777635D1
DE3777635D1 DE8787119083T DE3777635T DE3777635D1 DE 3777635 D1 DE3777635 D1 DE 3777635D1 DE 8787119083 T DE8787119083 T DE 8787119083T DE 3777635 T DE3777635 T DE 3777635T DE 3777635 D1 DE3777635 D1 DE 3777635D1
Authority
DE
Germany
Prior art keywords
plant
forming
thin layer
thin
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787119083T
Other languages
English (en)
Inventor
Hiroshi C O Itami Seisakus Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE3777635D1 publication Critical patent/DE3777635D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE8787119083T 1987-04-27 1987-12-23 Anlage zur bildung einer duennschicht. Expired - Fee Related DE3777635D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62101753A JPS63270458A (ja) 1987-04-27 1987-04-27 化合物薄膜形成装置

Publications (1)

Publication Number Publication Date
DE3777635D1 true DE3777635D1 (de) 1992-04-23

Family

ID=14308996

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787119083T Expired - Fee Related DE3777635D1 (de) 1987-04-27 1987-12-23 Anlage zur bildung einer duennschicht.

Country Status (6)

Country Link
US (1) US4799454A (de)
EP (1) EP0288608B1 (de)
JP (1) JPS63270458A (de)
KR (1) KR900008156B1 (de)
CA (1) CA1321976C (de)
DE (1) DE3777635D1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3628443C1 (de) * 1986-08-21 1988-02-11 Dornier System Gmbh Verfahren zur Erzeugung amorpher Schichten
DE3824273A1 (de) * 1988-07-16 1990-01-18 Philips Patentverwaltung Verfahren zur herstellung von festkoerpern
JPH02278203A (ja) * 1989-04-19 1990-11-14 Adachi Shin Sangyo Kk 光学反射板
GB2250751B (en) * 1990-08-24 1995-04-12 Kawasaki Heavy Ind Ltd Process for the production of dielectric thin films
US5234724A (en) * 1991-08-08 1993-08-10 Schmidt Instruments, Inc. Low energy ion doping of growing diamond by cvd
US5174826A (en) * 1991-12-06 1992-12-29 General Electric Company Laser-assisted chemical vapor deposition
US5350607A (en) * 1992-10-02 1994-09-27 United Technologies Corporation Ionized cluster beam deposition of sapphire
US5380683A (en) * 1992-10-02 1995-01-10 United Technologies Corporation Ionized cluster beam deposition of sapphire and silicon layers
US5441569A (en) * 1993-11-29 1995-08-15 The United States Of America As Represented By The United States Department Of Energy Apparatus and method for laser deposition of durable coatings
JP3768547B2 (ja) * 1993-12-17 2006-04-19 キヤノン株式会社 両面成膜方法
US6827824B1 (en) 1996-04-12 2004-12-07 Micron Technology, Inc. Enhanced collimated deposition
US5849371A (en) * 1996-07-22 1998-12-15 Beesley; Dwayne Laser and laser-assisted free electron beam deposition apparatus and method
US6014944A (en) * 1997-09-19 2000-01-18 The United States Of America As Represented By The Secretary Of The Navy Apparatus for improving crystalline thin films with a contoured beam pulsed laser
US6113751A (en) * 1998-08-06 2000-09-05 Lockheed Martin Corporation Electromagnetic beam assisted deposition method for depositing a material on an irradiated substrate
US6265033B1 (en) 1998-09-11 2001-07-24 Donald Bennett Hilliard Method for optically coupled vapor deposition
US6375790B1 (en) 1999-07-19 2002-04-23 Epion Corporation Adaptive GCIB for smoothing surfaces
US6498107B1 (en) 2000-05-01 2002-12-24 Epion Corporation Interface control for film deposition by gas-cluster ion-beam processing
US20060257665A1 (en) * 2005-05-03 2006-11-16 Bennett Ronald G Barrier-coating layer application method
US20060269680A1 (en) * 2005-05-24 2006-11-30 Bennett Ronald G Method for creating and applying liquid-container barrier coating
JP4356113B2 (ja) * 2005-08-08 2009-11-04 セイコーエプソン株式会社 製膜方法、パターニング方法、光学装置の製造方法、および電子装置の製造方法
US8043676B2 (en) * 2007-08-17 2011-10-25 High Impact Technology, L.L.C. Sealing-reaction, layer-effective, stealth liner for synthetic fuel container
US20090110848A1 (en) * 2007-10-25 2009-04-30 Los Alamos National Security, Llc Method and apparatus for high-pressure atomic-beam laser induced deposition/etching
US8387548B2 (en) * 2008-03-12 2013-03-05 High Impact Technology, Inc. Marine-vessel, anti-puncture, self-sealing, water-leak protection
US20100285247A1 (en) * 2008-07-22 2010-11-11 High Impact Technology, L.L.C. Combined self-sealing, and chemical and visual camouflage coating
JP5815967B2 (ja) * 2011-03-31 2015-11-17 東京エレクトロン株式会社 基板洗浄装置及び真空処理システム
EP2771425A1 (de) 2011-10-24 2014-09-03 The Regents of The University of California Verfahren zur herstellung von autogenem gesteinsmineral zur änderung der gesteinshydrologie
US9370674B2 (en) 2011-12-05 2016-06-21 High Impact Technology, Llc Plural layer, plural-action protective coating for liquid fuel container
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
US10865477B2 (en) * 2016-02-08 2020-12-15 Illinois Tool Works Inc. Method and system for the localized deposit of metal on a surface
CN112439582A (zh) * 2019-08-30 2021-03-05 长鑫存储技术有限公司 喷淋装置、半导体处理设备以及喷淋反应物的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941510B2 (ja) * 1979-07-24 1984-10-08 双葉電子工業株式会社 酸化ベリリウム膜とその形成方法
US4664769A (en) * 1985-10-28 1987-05-12 International Business Machines Corporation Photoelectric enhanced plasma glow discharge system and method including radiation means

Also Published As

Publication number Publication date
KR900008156B1 (ko) 1990-11-03
CA1321976C (en) 1993-09-07
US4799454A (en) 1989-01-24
KR890009015A (ko) 1989-07-13
EP0288608A1 (de) 1988-11-02
JPS63270458A (ja) 1988-11-08
EP0288608B1 (de) 1992-03-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee