KR890009015A - 화학물 박막 형성장치 - Google Patents

화학물 박막 형성장치 Download PDF

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Publication number
KR890009015A
KR890009015A KR870013039A KR870013039A KR890009015A KR 890009015 A KR890009015 A KR 890009015A KR 870013039 A KR870013039 A KR 870013039A KR 870013039 A KR870013039 A KR 870013039A KR 890009015 A KR890009015 A KR 890009015A
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KR
South Korea
Prior art keywords
electron beam
laser light
substrate
axima
electrode
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KR870013039A
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English (en)
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KR900008156B1 (ko
Inventor
히로기 이도오
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시끼모리야
미쓰비시전기주식회사
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Publication of KR890009015A publication Critical patent/KR890009015A/ko
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Publication of KR900008156B1 publication Critical patent/KR900008156B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/221—Ion beam deposition

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

내용 없음

Description

화학물 박막형성장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예를 표시하는 개략 구성도.
* 도면의 주요 부분에 대한 부호의 설명
1 : 진공조 3 : 도가니
5 : 증착물질 6 : 가열용필라멘트
7 : 클러스터 8, 12 : 열차폐판
9 : 증기발생원 10 : 제1전자비임방출수단
11 : 제1전자비임인출전극 13 : 이온화수단
14 : 클러스터이온 15 : 제1가속전극
16 : 기판 17 : 증착박막
28 : 내부조 28a : 개구부
20 : 가스분사노즐 30 : 제2전자비임방출수단
31 : 제2전자비임인출전극 32 : 전기차폐판
33 : 제2가속전극 34 : 가스이온원
39 : 액시마레이저장치 40 : 액시마레이저광
41 : 집광렌즈 42 : 창
그리고 각 도면중 동일부호는 동일 또는 상당부분을 표시한다.

Claims (2)

  1. 소정의 진공도로 보지된 진공조와, 이 진공조내에 배치된 기판과, 이 기판에 향하여 증착물질의 증기를 분출하며 상기 증착물질의 클러스터를 발생시키기 위한 증기발생원과, 이 증기발생원과 상기 기판간에 배치되고 상기 클러스터의 적어도 일부를 이온화하기 위한 이온화수단과, 이 이온화수단과 상기 기판간에 배치되어 상기 이온화수단에 의하여 이온화된 클러스터, 이온화되어 있지 않은 증착물질의 클러스터 및 증기를 상기 기판을 향하여 충돌시키기 위한 가속전극과, 상기 진공조내에 설치된 내부조와 이 내부조의 내측에 설치되어 반응성가스를 분사하기 위한 가스분사노즐과, 이 가스분사노즐의 반응성가스 분사방향에 설치되어 전자비임을 인출하기 위한 전자비임인출전극과, 이 전자비임인출전극의 반응성가스 분사방향에 설치되어 전자비임을 방출하기 위한 전자비임방출수단과, 상기 내부조내에서 상기 전자비임인출전극 및 상기 전자비임방출수단의 외측에 설치되어 이들 저자비임인출전극 및 전자비임방출수단을 전위적으로 차폐하기 위한 전개차폐판과, 이 전계차폐판과 상기 기판간에 설치되어 상기 전자비임인출전극 그리고 상기 전자비임방출수단을 정(正)의 전위에 바이어스하며 상기 반응성가스를 가속하기 위한 가속전극과, 상기 기판근방을 향하여 액시마레이저(exima laser)광을 조사하기 위한 액시마레이저광 조수사단을 구비한 것을 특징으로 하는 화합물 박막형성장치.
  2. 제1항에 있어서, 액시마레이저광 조사수단은 진공조의 외부에 설치되어 액시마레이저광을 발생시키기위한 액시마레이저장치와, 이 액시마레이저장치에서 조사된 액시마레이저광을 수렴하기 위한 집광렌즈와, 상기 진공조의 벽면에 설치되어 상기 집광렌즈에 의하여 수렴된 액시마레이저광을 투과시키기 위한 창으로 구성된 것을 특징으로 하는 화합물 박막형성장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870013039A 1987-04-27 1987-11-19 화학물 박막형성장치 KR900008156B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-101753 1987-04-27
JP?62-101753 1987-04-27
JP62101753A JPS63270458A (ja) 1987-04-27 1987-04-27 化合物薄膜形成装置

Publications (2)

Publication Number Publication Date
KR890009015A true KR890009015A (ko) 1989-07-13
KR900008156B1 KR900008156B1 (ko) 1990-11-03

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KR1019870013039A KR900008156B1 (ko) 1987-04-27 1987-11-19 화학물 박막형성장치

Country Status (6)

Country Link
US (1) US4799454A (ko)
EP (1) EP0288608B1 (ko)
JP (1) JPS63270458A (ko)
KR (1) KR900008156B1 (ko)
CA (1) CA1321976C (ko)
DE (1) DE3777635D1 (ko)

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US5350607A (en) * 1992-10-02 1994-09-27 United Technologies Corporation Ionized cluster beam deposition of sapphire
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US6113751A (en) * 1998-08-06 2000-09-05 Lockheed Martin Corporation Electromagnetic beam assisted deposition method for depositing a material on an irradiated substrate
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US8043676B2 (en) * 2007-08-17 2011-10-25 High Impact Technology, L.L.C. Sealing-reaction, layer-effective, stealth liner for synthetic fuel container
US20090110848A1 (en) * 2007-10-25 2009-04-30 Los Alamos National Security, Llc Method and apparatus for high-pressure atomic-beam laser induced deposition/etching
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JP5815967B2 (ja) * 2011-03-31 2015-11-17 東京エレクトロン株式会社 基板洗浄装置及び真空処理システム
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Also Published As

Publication number Publication date
EP0288608A1 (en) 1988-11-02
EP0288608B1 (en) 1992-03-18
KR900008156B1 (ko) 1990-11-03
US4799454A (en) 1989-01-24
CA1321976C (en) 1993-09-07
DE3777635D1 (de) 1992-04-23
JPS63270458A (ja) 1988-11-08

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