DE68910378D1 - Anlage zur Erzeugung dünner Schichten. - Google Patents

Anlage zur Erzeugung dünner Schichten.

Info

Publication number
DE68910378D1
DE68910378D1 DE89401277T DE68910378T DE68910378D1 DE 68910378 D1 DE68910378 D1 DE 68910378D1 DE 89401277 T DE89401277 T DE 89401277T DE 68910378 T DE68910378 T DE 68910378T DE 68910378 D1 DE68910378 D1 DE 68910378D1
Authority
DE
Germany
Prior art keywords
plant
production
thin layers
layers
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE89401277T
Other languages
English (en)
Other versions
DE68910378T2 (de
Inventor
Hideki Kamaji
Shin Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27469702&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE68910378(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP63109195A external-priority patent/JP2608456B2/ja
Priority claimed from JP63156220A external-priority patent/JP2590534B2/ja
Priority claimed from JP63280496A external-priority patent/JPH02129376A/ja
Priority claimed from JP63312860A external-priority patent/JPH02159380A/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE68910378D1 publication Critical patent/DE68910378D1/de
Application granted granted Critical
Publication of DE68910378T2 publication Critical patent/DE68910378T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
DE89401277T 1988-05-06 1989-05-05 Anlage zur Erzeugung dünner Schichten. Expired - Lifetime DE68910378T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP63109195A JP2608456B2 (ja) 1988-05-06 1988-05-06 薄膜形成装置
JP63156220A JP2590534B2 (ja) 1988-06-23 1988-06-23 薄膜形成方法
JP63280496A JPH02129376A (ja) 1988-11-08 1988-11-08 薄膜形成装置
JP63312860A JPH02159380A (ja) 1988-12-13 1988-12-13 薄膜形成装置

Publications (2)

Publication Number Publication Date
DE68910378D1 true DE68910378D1 (de) 1993-12-09
DE68910378T2 DE68910378T2 (de) 1994-03-03

Family

ID=27469702

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89401277T Expired - Lifetime DE68910378T2 (de) 1988-05-06 1989-05-05 Anlage zur Erzeugung dünner Schichten.

Country Status (4)

Country Link
US (1) US4979467A (de)
EP (1) EP0342113B1 (de)
KR (1) KR920008122B1 (de)
DE (1) DE68910378T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5236511A (en) * 1990-03-16 1993-08-17 Schott Glaswerke Plasma CVD process for coating a dome-shaped substrate
EP0462730A1 (de) * 1990-06-18 1991-12-27 AT&T Corp. Verfahren und Vorrichtung zur Herstellung planarer Schichten für integrierte Schaltungen
JPH0817171B2 (ja) * 1990-12-31 1996-02-21 株式会社半導体エネルギー研究所 プラズマ発生装置およびそれを用いたエッチング方法
US5549780A (en) * 1990-10-23 1996-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for plasma processing and apparatus for plasma processing
US5578130A (en) * 1990-12-12 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Apparatus and method for depositing a film
US5330578A (en) * 1991-03-12 1994-07-19 Semiconductor Energy Laboratory Co., Ltd. Plasma treatment apparatus
US5292400A (en) * 1992-03-23 1994-03-08 Hughes Aircraft Company Method and apparatus for producing variable spatial frequency control in plasma assisted chemical etching
JP2888026B2 (ja) * 1992-04-30 1999-05-10 松下電器産業株式会社 プラズマｃｖｄ装置
US7264850B1 (en) 1992-12-28 2007-09-04 Semiconductor Energy Laboratory Co., Ltd. Process for treating a substrate with a plasma
JP3513206B2 (ja) * 1994-03-22 2004-03-31 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
JP3387616B2 (ja) * 1994-04-18 2003-03-17 キヤノン株式会社 プラズマ処理装置
US5763020A (en) * 1994-10-17 1998-06-09 United Microelectronics Corporation Process for evenly depositing ions using a tilting and rotating platform
US6435130B1 (en) * 1996-08-22 2002-08-20 Canon Kabushiki Kaisha Plasma CVD apparatus and plasma processing method
DE19645912C1 (de) * 1996-11-07 1997-08-28 Dresden Ev Inst Festkoerper Plasma-CVD-Reaktor
DE10060002B4 (de) * 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
WO2003100817A1 (en) 2002-05-23 2003-12-04 Lam Research Corporation Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a mutli-part electrode
KR100615015B1 (ko) * 2002-10-16 2006-08-25 샤프 가부시키가이샤 전자 디바이스, 그 제조방법 및 플라즈마처리장치
CN1293608C (zh) * 2002-10-16 2007-01-03 夏普株式会社 半导体器件及其制造方法以及等离子加工装置
US20080159925A1 (en) * 2006-12-27 2008-07-03 Ngk Insulators, Ltd. Plasma processing apparatus
KR101415550B1 (ko) * 2007-07-27 2014-07-04 주식회사 미코 접지 구조물, 이를 갖는 기판 지지 유닛 및 박막 형성 장치
US9175391B2 (en) * 2011-05-26 2015-11-03 Intermolecular, Inc. Apparatus and method for combinatorial gas distribution through a multi-zoned showerhead
US9396900B2 (en) * 2011-11-16 2016-07-19 Tokyo Electron Limited Radio frequency (RF) power coupling system utilizing multiple RF power coupling elements for control of plasma properties
JP2017183392A (ja) * 2016-03-29 2017-10-05 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59193265A (ja) * 1983-03-14 1984-11-01 Stanley Electric Co Ltd プラズマｃｖｄ装置
JPS59193266A (ja) * 1983-03-14 1984-11-01 Stanley Electric Co Ltd プラズマｃｖｄ装置
JPS59205470A (ja) * 1983-05-02 1984-11-21 Kowa Eng Kk 硬質被膜の形成装置及びその形成方法
JPS59207620A (ja) * 1983-05-10 1984-11-24 Zenko Hirose アモルフアスシリコン成膜装置
US4496448A (en) * 1983-10-13 1985-01-29 At&T Bell Laboratories Method for fabricating devices with DC bias-controlled reactive ion etching
JPS60116126A (ja) * 1983-11-28 1985-06-22 Ricoh Co Ltd プラズマｃｖｄ装置
JPS60162777A (ja) * 1984-02-06 1985-08-24 Canon Inc プラズマｃｖｄ装置
US4681653A (en) * 1984-06-01 1987-07-21 Texas Instruments Incorporated Planarized dielectric deposited using plasma enhanced chemical vapor deposition
JPS61143579A (ja) * 1984-12-14 1986-07-01 Nachi Fujikoshi Corp プラズマイオン供給方法
JPS6358924A (ja) * 1986-08-29 1988-03-14 Mitsubishi Electric Corp プラズマ気相成長装置

Also Published As

Publication number Publication date
EP0342113B1 (de) 1993-11-03
KR900019133A (ko) 1990-12-24
EP0342113A1 (de) 1989-11-15
US4979467A (en) 1990-12-25
KR920008122B1 (ko) 1992-09-22
DE68910378T2 (de) 1994-03-03

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8365 Fully valid after opposition proceedings
8327 Change in the person/name/address of the patent owner

Owner name: FUJI XEROX CO., LTD., TOKIO/TOKYO, JP