DE3875015D1 - Einrichtung zur einstellung der ausgangsposition einer schmelzenoberflaeche. - Google Patents
Einrichtung zur einstellung der ausgangsposition einer schmelzenoberflaeche.Info
- Publication number
- DE3875015D1 DE3875015D1 DE8888710019T DE3875015T DE3875015D1 DE 3875015 D1 DE3875015 D1 DE 3875015D1 DE 8888710019 T DE8888710019 T DE 8888710019T DE 3875015 T DE3875015 T DE 3875015T DE 3875015 D1 DE3875015 D1 DE 3875015D1
- Authority
- DE
- Germany
- Prior art keywords
- adjusting
- starting position
- melt surface
- melt
- starting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62181722A JPS6424089A (en) | 1987-07-21 | 1987-07-21 | Device for adjusting initial position of melt surface |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3875015D1 true DE3875015D1 (de) | 1992-11-05 |
DE3875015T2 DE3875015T2 (de) | 1993-03-04 |
Family
ID=16105731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888710019T Expired - Fee Related DE3875015T2 (de) | 1987-07-21 | 1988-07-21 | Einrichtung zur einstellung der ausgangsposition einer schmelzenoberflaeche. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4915775A (de) |
EP (1) | EP0301998B1 (de) |
JP (1) | JPS6424089A (de) |
DE (1) | DE3875015T2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0776144B2 (ja) * | 1988-11-21 | 1995-08-16 | 信越半導体株式会社 | 結晶引上ワイヤの偏芯量測定装置 |
JP2678383B2 (ja) * | 1989-05-30 | 1997-11-17 | 信越半導体 株式会社 | 単結晶上装置 |
JPH0726817B2 (ja) * | 1990-07-28 | 1995-03-29 | 信越半導体株式会社 | 結晶径測定装置 |
JPH0785489B2 (ja) * | 1991-02-08 | 1995-09-13 | 信越半導体株式会社 | 単結晶の直径計測方法 |
US5408952A (en) * | 1991-04-26 | 1995-04-25 | Mitsubishi Materials Corporation | Single crystal growth method |
DE4123336A1 (de) * | 1991-07-15 | 1993-01-21 | Leybold Ag | Kristallziehverfahren und vorrichtung zu seiner durchfuehrung |
US5286461A (en) * | 1991-09-20 | 1994-02-15 | Ferrofluidics Corporation | Method and apparatus for melt level detection in czochralski crystal growth systems |
DE4231162C2 (de) * | 1992-09-17 | 1996-03-14 | Wacker Siltronic Halbleitermat | Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen |
JP2823035B2 (ja) * | 1993-02-10 | 1998-11-11 | 信越半導体株式会社 | 半導体単結晶の引上装置及び引上方法 |
US5582642A (en) * | 1995-06-20 | 1996-12-10 | Memc Electronic Materials, Inc. | Apparatus and method for adjusting the position of a pull wire of a crystal pulling machine |
US5888299A (en) * | 1995-12-27 | 1999-03-30 | Shin-Etsu Handotai Co., Ltd. | Apparatus for adjusting initial position of melt surface |
US6071340A (en) * | 1996-02-28 | 2000-06-06 | General Signal Technology Corporation | Apparatus for melt-level detection in Czochralski crystal growth systems |
JP3758743B2 (ja) * | 1996-04-22 | 2006-03-22 | コマツ電子金属株式会社 | 半導体単結晶製造装置 |
DE19652543A1 (de) * | 1996-12-17 | 1998-06-18 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung eines Silicium-Einkristalls und Heizvorrichtung zur Durchführung des Verfahrens |
US5961716A (en) * | 1997-12-15 | 1999-10-05 | Seh America, Inc. | Diameter and melt measurement method used in automatically controlled crystal growth |
US6030451A (en) * | 1998-01-12 | 2000-02-29 | Seh America, Inc. | Two camera diameter control system with diameter tracking for silicon ingot growth |
US6106612A (en) * | 1998-06-04 | 2000-08-22 | Seh America Inc. | Level detector and method for detecting a surface level of a material in a container |
JP4561513B2 (ja) | 2005-07-22 | 2010-10-13 | 株式会社Sumco | 単結晶引き上げ装置の液面位置調整機構及び液面位置調整方法並びに単結晶引き上げ装置の液面位置合わせ機構及び液面位置合わせ方法 |
JP5678635B2 (ja) | 2010-12-13 | 2015-03-04 | 株式会社Sumco | シリコン単結晶の製造装置、シリコン単結晶の製造方法 |
JP5664573B2 (ja) | 2012-02-21 | 2015-02-04 | 信越半導体株式会社 | シリコン融液面の高さ位置の算出方法およびシリコン単結晶の引上げ方法ならびにシリコン単結晶引上げ装置 |
JP6078974B2 (ja) | 2012-04-04 | 2017-02-15 | 株式会社Sumco | シリコン単結晶の製造方法 |
CN106687625B (zh) | 2014-09-12 | 2019-06-21 | 信越半导体株式会社 | 单晶的制造方法 |
JP6536345B2 (ja) | 2015-10-14 | 2019-07-03 | 信越半導体株式会社 | 単結晶製造装置及び融液面位置の制御方法 |
JP6390579B2 (ja) * | 2015-10-19 | 2018-09-19 | 信越半導体株式会社 | 単結晶の製造方法 |
AT526111B1 (de) | 2022-05-05 | 2024-04-15 | Fametec Gmbh | Vorrichtung und Verfahren zur Herstellung eines künstlichen Saphir-Einkristalls |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3998598A (en) * | 1973-11-23 | 1976-12-21 | Semimetals, Inc. | Automatic diameter control for crystal growing facilities |
US4207293A (en) * | 1974-06-14 | 1980-06-10 | Varian Associates, Inc. | Circumferential error signal apparatus for crystal rod pulling |
US3980438A (en) * | 1975-08-28 | 1976-09-14 | Arthur D. Little, Inc. | Apparatus for forming semiconductor crystals of essentially uniform diameter |
DE3049376A1 (de) * | 1980-12-29 | 1982-07-29 | Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen | Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze |
JPS5933554B2 (ja) * | 1982-08-19 | 1984-08-16 | 株式会社東芝 | 結晶成長装置 |
JPS6021893A (ja) * | 1983-07-12 | 1985-02-04 | Toshiba Corp | 単結晶の製造装置 |
JPS6186493A (ja) * | 1984-10-04 | 1986-05-01 | Toshiba Mach Co Ltd | 半導体結晶引上機 |
JPH0649631B2 (ja) * | 1986-10-29 | 1994-06-29 | 信越半導体株式会社 | 結晶径測定装置 |
-
1987
- 1987-07-21 JP JP62181722A patent/JPS6424089A/ja active Granted
-
1988
- 1988-07-21 EP EP88710019A patent/EP0301998B1/de not_active Expired - Lifetime
- 1988-07-21 US US07/222,438 patent/US4915775A/en not_active Expired - Lifetime
- 1988-07-21 DE DE8888710019T patent/DE3875015T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3875015T2 (de) | 1993-03-04 |
EP0301998B1 (de) | 1992-09-30 |
JPH0559876B2 (de) | 1993-09-01 |
JPS6424089A (en) | 1989-01-26 |
EP0301998A1 (de) | 1989-02-01 |
US4915775A (en) | 1990-04-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |