DE3875015D1 - Einrichtung zur einstellung der ausgangsposition einer schmelzenoberflaeche. - Google Patents

Einrichtung zur einstellung der ausgangsposition einer schmelzenoberflaeche.

Info

Publication number
DE3875015D1
DE3875015D1 DE8888710019T DE3875015T DE3875015D1 DE 3875015 D1 DE3875015 D1 DE 3875015D1 DE 8888710019 T DE8888710019 T DE 8888710019T DE 3875015 T DE3875015 T DE 3875015T DE 3875015 D1 DE3875015 D1 DE 3875015D1
Authority
DE
Germany
Prior art keywords
adjusting
starting position
melt surface
melt
starting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888710019T
Other languages
English (en)
Other versions
DE3875015T2 (de
Inventor
Nobuo Katsuoka
Yoshihiro Hirano
Munenori Tomita
Atsushi Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE3875015D1 publication Critical patent/DE3875015D1/de
Publication of DE3875015T2 publication Critical patent/DE3875015T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8888710019T 1987-07-21 1988-07-21 Einrichtung zur einstellung der ausgangsposition einer schmelzenoberflaeche. Expired - Fee Related DE3875015T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62181722A JPS6424089A (en) 1987-07-21 1987-07-21 Device for adjusting initial position of melt surface

Publications (2)

Publication Number Publication Date
DE3875015D1 true DE3875015D1 (de) 1992-11-05
DE3875015T2 DE3875015T2 (de) 1993-03-04

Family

ID=16105731

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888710019T Expired - Fee Related DE3875015T2 (de) 1987-07-21 1988-07-21 Einrichtung zur einstellung der ausgangsposition einer schmelzenoberflaeche.

Country Status (4)

Country Link
US (1) US4915775A (de)
EP (1) EP0301998B1 (de)
JP (1) JPS6424089A (de)
DE (1) DE3875015T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0776144B2 (ja) * 1988-11-21 1995-08-16 信越半導体株式会社 結晶引上ワイヤの偏芯量測定装置
JP2678383B2 (ja) * 1989-05-30 1997-11-17 信越半導体 株式会社 単結晶上装置
JPH0726817B2 (ja) * 1990-07-28 1995-03-29 信越半導体株式会社 結晶径測定装置
JPH0785489B2 (ja) * 1991-02-08 1995-09-13 信越半導体株式会社 単結晶の直径計測方法
WO1992019797A1 (en) * 1991-04-26 1992-11-12 Mitsubishi Materials Corporation Process for pulling up single crystal
DE4123336A1 (de) * 1991-07-15 1993-01-21 Leybold Ag Kristallziehverfahren und vorrichtung zu seiner durchfuehrung
US5286461A (en) * 1991-09-20 1994-02-15 Ferrofluidics Corporation Method and apparatus for melt level detection in czochralski crystal growth systems
DE4231162C2 (de) * 1992-09-17 1996-03-14 Wacker Siltronic Halbleitermat Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen
JP2823035B2 (ja) * 1993-02-10 1998-11-11 信越半導体株式会社 半導体単結晶の引上装置及び引上方法
US5582642A (en) * 1995-06-20 1996-12-10 Memc Electronic Materials, Inc. Apparatus and method for adjusting the position of a pull wire of a crystal pulling machine
US5888299A (en) * 1995-12-27 1999-03-30 Shin-Etsu Handotai Co., Ltd. Apparatus for adjusting initial position of melt surface
US6071340A (en) * 1996-02-28 2000-06-06 General Signal Technology Corporation Apparatus for melt-level detection in Czochralski crystal growth systems
JP3758743B2 (ja) * 1996-04-22 2006-03-22 コマツ電子金属株式会社 半導体単結晶製造装置
DE19652543A1 (de) * 1996-12-17 1998-06-18 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Silicium-Einkristalls und Heizvorrichtung zur Durchführung des Verfahrens
US5961716A (en) * 1997-12-15 1999-10-05 Seh America, Inc. Diameter and melt measurement method used in automatically controlled crystal growth
US6030451A (en) * 1998-01-12 2000-02-29 Seh America, Inc. Two camera diameter control system with diameter tracking for silicon ingot growth
US6106612A (en) * 1998-06-04 2000-08-22 Seh America Inc. Level detector and method for detecting a surface level of a material in a container
JP4561513B2 (ja) 2005-07-22 2010-10-13 株式会社Ｓｕｍｃｏ 単結晶引き上げ装置の液面位置調整機構及び液面位置調整方法並びに単結晶引き上げ装置の液面位置合わせ機構及び液面位置合わせ方法
JP5678635B2 (ja) 2010-12-13 2015-03-04 株式会社Sumco シリコン単結晶の製造装置、シリコン単結晶の製造方法
JP5664573B2 (ja) 2012-02-21 2015-02-04 信越半導体株式会社 シリコン融液面の高さ位置の算出方法およびシリコン単結晶の引上げ方法ならびにシリコン単結晶引上げ装置
JP6078974B2 (ja) 2012-04-04 2017-02-15 株式会社Sumco シリコン単結晶の製造方法
WO2016038817A1 (ja) 2014-09-12 2016-03-17 信越半導体株式会社 単結晶の製造方法
JP6536345B2 (ja) 2015-10-14 2019-07-03 信越半導体株式会社 単結晶製造装置及び融液面位置の制御方法
JP6390579B2 (ja) * 2015-10-19 2018-09-19 信越半導体株式会社 単結晶の製造方法
AT526111B1 (de) 2022-05-05 2024-04-15 Fametec Gmbh Vorrichtung und Verfahren zur Herstellung eines künstlichen Saphir-Einkristalls

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3998598A (en) * 1973-11-23 1976-12-21 Semimetals, Inc. Automatic diameter control for crystal growing facilities
US4207293A (en) * 1974-06-14 1980-06-10 Varian Associates, Inc. Circumferential error signal apparatus for crystal rod pulling
US3980438A (en) * 1975-08-28 1976-09-14 Arthur D. Little, Inc. Apparatus for forming semiconductor crystals of essentially uniform diameter
DE3049376A1 (de) * 1980-12-29 1982-07-29 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze
JPS5933554B2 (ja) * 1982-08-19 1984-08-16 株式会社東芝 結晶成長装置
JPS6021893A (ja) * 1983-07-12 1985-02-04 Toshiba Corp 単結晶の製造装置
JPS6186493A (ja) * 1984-10-04 1986-05-01 Toshiba Mach Co Ltd 半導体結晶引上機
JPH0649631B2 (ja) * 1986-10-29 1994-06-29 信越半導体株式会社 結晶径測定装置

Also Published As

Publication number Publication date
US4915775A (en) 1990-04-10
JPH0559876B2 (de) 1993-09-01
DE3875015T2 (de) 1993-03-04
JPS6424089A (en) 1989-01-26
EP0301998A1 (de) 1989-02-01
EP0301998B1 (de) 1992-09-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee