DE69010444D1 - Anlage zur Herstellung von Schichten. - Google Patents

Anlage zur Herstellung von Schichten.

Info

Publication number
DE69010444D1
DE69010444D1 DE69010444T DE69010444T DE69010444D1 DE 69010444 D1 DE69010444 D1 DE 69010444D1 DE 69010444 T DE69010444 T DE 69010444T DE 69010444 T DE69010444 T DE 69010444T DE 69010444 D1 DE69010444 D1 DE 69010444D1
Authority
DE
Germany
Prior art keywords
plant
layers
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69010444T
Other languages
English (en)
Other versions
DE69010444T2 (de
Inventor
Hitoshi Tamura
Tamotsu Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69010444D1 publication Critical patent/DE69010444D1/de
Application granted granted Critical
Publication of DE69010444T2 publication Critical patent/DE69010444T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
DE69010444T 1989-10-06 1990-10-02 Anlage zur Herstellung von Schichten. Expired - Fee Related DE69010444T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1260297A JPH03122273A (ja) 1989-10-06 1989-10-06 マイクロ波を用いた成膜装置

Publications (2)

Publication Number Publication Date
DE69010444D1 true DE69010444D1 (de) 1994-08-11
DE69010444T2 DE69010444T2 (de) 1994-10-27

Family

ID=17346087

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69010444T Expired - Fee Related DE69010444T2 (de) 1989-10-06 1990-10-02 Anlage zur Herstellung von Schichten.

Country Status (5)

Country Link
US (1) US5074985A (de)
EP (1) EP0421348B1 (de)
JP (1) JPH03122273A (de)
KR (1) KR940000874B1 (de)
DE (1) DE69010444T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2824808B2 (ja) * 1990-11-16 1998-11-18 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する装置
JPH05109655A (ja) * 1991-10-15 1993-04-30 Applied Materials Japan Kk Ｃｖｄ−スパツタ装置
DE69306007T2 (de) * 1992-01-30 1997-05-22 Hitachi Ltd Verfahren und Vorrichtung zur Plasmaerzeugung und Verfahren zur Halbleiter-Bearbeitung
US5700326A (en) * 1992-02-27 1997-12-23 Canon Kabushiki Kaisha Microwave plasma processing apparatus
EP0578047B1 (de) * 1992-06-23 1998-05-13 Nippon Telegraph And Telephone Corporation Plasmabearbeitungsgerät
FR2693620B1 (fr) * 1992-07-09 1994-10-07 Valeo Vision Appareil pour le dépôt d'un polymère par l'intermédiaire d'un plasma excité par micro-ondes.
CH686254A5 (de) * 1992-07-27 1996-02-15 Balzers Hochvakuum Verfahren zur Einstellung der Bearbeitungsratenverteilung sowie Aetz- oder Plasma-CVD-Anlage zu dessen Ausfuehrung.
DE9313120U1 (de) * 1993-09-01 1993-11-25 Leybold Ag Blende zur Vermeidung der Beschichtung von Vorrichtungsteilen und/oder Substratpartien während des Beschichtungsprozesses in der Vakuumkammer einer Sputteranlage
JPH07169740A (ja) * 1993-12-14 1995-07-04 Nec Corp マイクロ波プラズマ処理装置
DE69529775T2 (de) * 1994-08-05 2003-10-16 Ibm Verfahren zur Herstellung einer Damaszenstruktur mit einer WGe Polierstoppschicht
JP3164200B2 (ja) * 1995-06-15 2001-05-08 住友金属工業株式会社 マイクロ波プラズマ処理装置
JPH1081973A (ja) * 1996-03-18 1998-03-31 Hyundai Electron Ind Co Ltd 誘導結合形プラズマｃｖｄ装置
US5961851A (en) * 1996-04-02 1999-10-05 Fusion Systems Corporation Microwave plasma discharge device
WO1999010913A1 (en) 1997-08-26 1999-03-04 Applied Materials, Inc. An apparatus and method for allowing a stable power transmission into a plasma processing chamber
US6051100A (en) * 1997-10-24 2000-04-18 International Business Machines Corporation High conductance plasma containment structure
JPH11319545A (ja) * 1997-12-15 1999-11-24 Canon Inc プラズマ処理方法及び基体の処理方法
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
JP2003523072A (ja) * 1998-07-29 2003-07-29 アプライド マテリアルズ インコーポレイテッド プラズマ処理チャンバ内への安定な電力伝達を可能にする方法
JP3496560B2 (ja) * 1999-03-12 2004-02-16 東京エレクトロン株式会社 プラズマ処理装置
US6221202B1 (en) 1999-04-01 2001-04-24 International Business Machines Corporation Efficient plasma containment structure
US6831742B1 (en) 2000-10-23 2004-12-14 Applied Materials, Inc Monitoring substrate processing using reflected radiation
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
JP3870909B2 (ja) * 2003-01-31 2007-01-24 株式会社島津製作所 プラズマ処理装置
DE102004045046B4 (de) * 2004-09-15 2007-01-04 Schott Ag Verfahren und Vorrichtung zum Aufbringen einer elektrisch leitfähigen transparenten Beschichtung auf ein Substrat
CN106987827B (zh) * 2017-04-14 2019-03-29 太原理工大学 等离子体化学气相沉积微波谐振腔及装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0616384B2 (ja) * 1984-06-11 1994-03-02 日本電信電話株式会社 マイクロ波イオン源
DE3566194D1 (en) * 1984-08-31 1988-12-15 Hitachi Ltd Microwave assisting sputtering
JPS62131511A (ja) * 1985-12-04 1987-06-13 Canon Inc 微粒子の吹き付け装置
US4776918A (en) * 1986-10-20 1988-10-11 Hitachi, Ltd. Plasma processing apparatus
JP2569019B2 (ja) * 1986-10-20 1997-01-08 株式会社日立製作所 エッチング方法及びその装置
US4970435A (en) * 1987-12-09 1990-11-13 Tel Sagami Limited Plasma processing apparatus
US4952273A (en) * 1988-09-21 1990-08-28 Microscience, Inc. Plasma generation in electron cyclotron resonance

Also Published As

Publication number Publication date
US5074985A (en) 1991-12-24
JPH03122273A (ja) 1991-05-24
KR910008871A (ko) 1991-05-31
EP0421348B1 (de) 1994-07-06
DE69010444T2 (de) 1994-10-27
KR940000874B1 (ko) 1994-02-03
EP0421348A1 (de) 1991-04-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee