DE3689387D1 - Verfahren zur Herstellung einer Dünnschicht aus GaAs. - Google Patents

Verfahren zur Herstellung einer Dünnschicht aus GaAs.

Info

Publication number
DE3689387D1
DE3689387D1 DE86106679T DE3689387T DE3689387D1 DE 3689387 D1 DE3689387 D1 DE 3689387D1 DE 86106679 T DE86106679 T DE 86106679T DE 3689387 T DE3689387 T DE 3689387T DE 3689387 D1 DE3689387 D1 DE 3689387D1
Authority
DE
Germany
Prior art keywords
gaas
production
thin layer
thin
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE86106679T
Other languages
English (en)
Other versions
DE3689387T2 (de
Inventor
Seiji Kojima
Masakiyo Ikeda
Hiroshi Kikuchi
Yuzo Kashiwayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Application granted granted Critical
Publication of DE3689387D1 publication Critical patent/DE3689387D1/de
Publication of DE3689387T2 publication Critical patent/DE3689387T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
DE3689387T 1985-05-16 1986-05-15 Verfahren zur Herstellung einer Dünnschicht aus GaAs. Expired - Fee Related DE3689387T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10462685 1985-05-16

Publications (2)

Publication Number Publication Date
DE3689387D1 true DE3689387D1 (de) 1994-01-27
DE3689387T2 DE3689387T2 (de) 1994-06-30

Family

ID=14385648

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3689387T Expired - Fee Related DE3689387T2 (de) 1985-05-16 1986-05-15 Verfahren zur Herstellung einer Dünnschicht aus GaAs.

Country Status (5)

Country Link
US (1) US4798743A (de)
EP (1) EP0201933B1 (de)
JP (1) JPH0754802B2 (de)
CA (1) CA1274429A (de)
DE (1) DE3689387T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61275191A (ja) * 1985-05-29 1986-12-05 Furukawa Electric Co Ltd:The ＧａＡｓ薄膜の気相成長法
DE3707672A1 (de) * 1987-03-10 1988-09-22 Sitesa Sa Epitaxieanlage
US5304820A (en) * 1987-03-27 1994-04-19 Canon Kabushiki Kaisha Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same
DE3726971A1 (de) * 1987-08-13 1989-02-23 Standard Elektrik Lorenz Ag Methode zur herstellung planarer epitaxieschichten mittels selektiver metallorganischer gasphasenepitaxie (movpe)
CN101372760B (zh) * 2008-09-10 2011-08-24 太原理工大学 一种发红光的掺氧砷化镓多晶薄膜的制备方法
CN103147038B (zh) * 2012-12-19 2014-10-29 常州星海电子有限公司 一种制备GaAs薄膜材料的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4188244A (en) * 1975-04-10 1980-02-12 Matsushita Electric Industrial Co., Ltd. Method of making a semiconductor light-emitting device utilizing low-temperature vapor-phase deposition
US4142924A (en) * 1976-12-16 1979-03-06 Massachusetts Institute Of Technology Fast-sweep growth method for growing layers using liquid phase epitaxy
US4168998A (en) * 1978-12-06 1979-09-25 Mitsubishi Monsanto Chemical Co. Process for manufacturing a vapor phase epitaxial wafer of compound semiconductor without causing breaking of wafer by utilizing a pre-coating of carbonaceous powder
JPS56133819A (en) * 1980-03-25 1981-10-20 Toshiba Corp Manufacture of epitaxial wafer for field effect transistor
JPS582294A (ja) * 1981-06-29 1983-01-07 Fujitsu Ltd 気相成長方法
JPS6012724A (ja) * 1983-07-01 1985-01-23 Agency Of Ind Science & Technol 化合物半導体の成長方法
US4550031A (en) * 1984-11-26 1985-10-29 Honeywell Inc. Control of Si doping in GaAs, (Al,Ga)As and other compound semiconductors during MBE growth

Also Published As

Publication number Publication date
JPH0754802B2 (ja) 1995-06-07
DE3689387T2 (de) 1994-06-30
EP0201933B1 (de) 1993-12-15
EP0201933A3 (en) 1988-12-14
EP0201933A2 (de) 1986-11-20
CA1274429A (en) 1990-09-25
US4798743A (en) 1989-01-17
JPS6254424A (ja) 1987-03-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee