DE69128566D1 - Zusammengesetzte integrierte Schaltungsanordnung - Google Patents
Zusammengesetzte integrierte SchaltungsanordnungInfo
- Publication number
- DE69128566D1 DE69128566D1 DE69128566T DE69128566T DE69128566D1 DE 69128566 D1 DE69128566 D1 DE 69128566D1 DE 69128566 T DE69128566 T DE 69128566T DE 69128566 T DE69128566 T DE 69128566T DE 69128566 D1 DE69128566 D1 DE 69128566D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- circuit arrangement
- composite integrated
- composite
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002131 composite material Substances 0.000 title 1
Classifications
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
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Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP17270690 | 1990-07-02 | ||
JP7902691A JP3190057B2 (ja) | 1990-07-02 | 1991-04-11 | 複合集積回路装置 |
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DE69128566T2 DE69128566T2 (de) | 1998-05-14 |
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JP (1) | JP3190057B2 (de) |
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US5994739A (en) * | 1990-07-02 | 1999-11-30 | Kabushiki Kaisha Toshiba | Integrated circuit device |
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WO1996013859A1 (de) * | 1994-10-28 | 1996-05-09 | Siemens Aktiengesellschaft | Festkörperschaltelement mit zwei source-elektroden und festkörperschalter mit einem solchen element |
US7195960B2 (en) * | 1996-06-28 | 2007-03-27 | Seiko Epson Corporation | Thin film transistor, manufacturing method thereof, and circuit and liquid crystal display device using the thin film transistor |
US6429120B1 (en) | 2000-01-18 | 2002-08-06 | Micron Technology, Inc. | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals |
US6084248A (en) * | 1996-06-28 | 2000-07-04 | Seiko Epson Corporation | Thin film transistor, manufacturing method thereof, and circuit and liquid crystal display device using the thin film transistor |
JP2000516044A (ja) * | 1996-10-10 | 2000-11-28 | サムソン・エレクトロニクス・カンパニー・リミテッド | マイクロ波ハイブリッド集積回路 |
US6271102B1 (en) | 1998-02-27 | 2001-08-07 | International Business Machines Corporation | Method and system for dicing wafers, and semiconductor structures incorporating the products thereof |
FR2780551B1 (fr) * | 1998-06-29 | 2001-09-07 | Inside Technologies | Micromodule electronique integre et procede de fabrication d'un tel micromodule |
DE10011005B4 (de) * | 1999-07-01 | 2004-03-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Multi-Chip-Modul und Verfahren zum Herstellen eines Multi-Chip-Moduls |
US6242763B1 (en) * | 1999-09-14 | 2001-06-05 | United Microelectronics Corp. | Low triggering voltage SOI silicon-control-rectifier (SCR) structure |
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JP3650008B2 (ja) * | 2000-09-04 | 2005-05-18 | 三洋電機株式会社 | Mosfetを用いた保護回路装置およびその製造方法 |
FR2817399B1 (fr) | 2000-11-30 | 2003-10-31 | St Microelectronics Sa | Puce electronique multifonctions |
JP3724374B2 (ja) * | 2001-01-15 | 2005-12-07 | ソニー株式会社 | 固体撮像装置及びその駆動方法 |
US6670255B2 (en) * | 2001-09-27 | 2003-12-30 | International Business Machines Corporation | Method of fabricating lateral diodes and bipolar transistors |
DE10149195A1 (de) * | 2001-10-05 | 2003-04-24 | Infineon Technologies Ag | Verfahren zum Herstellen einer integrierten Schaltung mit einer auf einem Dielektrikum angeordneten leitfähigen Struktur |
US6861341B2 (en) * | 2002-02-22 | 2005-03-01 | Xerox Corporation | Systems and methods for integration of heterogeneous circuit devices |
AU2003263433A1 (en) * | 2002-09-17 | 2004-04-08 | Axalto Sa | Method of manufacturing a wafer assembly |
CN1501493B (zh) * | 2002-11-13 | 2013-07-17 | 日本冲信息株式会社 | 具有半导体薄膜的组合半导体装置 |
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WO2004112136A1 (en) * | 2003-06-12 | 2004-12-23 | Koninklijke Philips Electronics N.V. | Electronic device |
JP2005311118A (ja) * | 2004-04-22 | 2005-11-04 | Seiko Epson Corp | 半導体装置及びその製造方法、電気光学装置、並びに電子機器 |
CN100385657C (zh) * | 2004-09-09 | 2008-04-30 | 精工爱普生株式会社 | 电子装置及其制造方法 |
JP2006303408A (ja) * | 2004-09-09 | 2006-11-02 | Seiko Epson Corp | 電子装置及びその製造方法 |
JP4801339B2 (ja) * | 2004-10-06 | 2011-10-26 | シチズン電子株式会社 | 光通信モジュール |
US7485968B2 (en) | 2005-08-11 | 2009-02-03 | Ziptronix, Inc. | 3D IC method and device |
US7652339B2 (en) * | 2007-04-06 | 2010-01-26 | Xerox Corporation | Ambipolar transistor design |
KR101721850B1 (ko) * | 2009-11-13 | 2017-03-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8803191B2 (en) | 2011-10-14 | 2014-08-12 | Pakal Technologies Llc | Systems, devices, and methods with integrable FET-controlled lateral thyristors |
US9953941B2 (en) | 2015-08-25 | 2018-04-24 | Invensas Bonding Technologies, Inc. | Conductive barrier direct hybrid bonding |
US9659979B2 (en) * | 2015-10-15 | 2017-05-23 | International Business Machines Corporation | Sensors including complementary lateral bipolar junction transistors |
US10840205B2 (en) | 2017-09-24 | 2020-11-17 | Invensas Bonding Technologies, Inc. | Chemical mechanical polishing for hybrid bonding |
US11056348B2 (en) | 2018-04-05 | 2021-07-06 | Invensas Bonding Technologies, Inc. | Bonding surfaces for microelectronics |
US11393779B2 (en) | 2018-06-13 | 2022-07-19 | Invensas Bonding Technologies, Inc. | Large metal pads over TSV |
CN112585740A (zh) | 2018-06-13 | 2021-03-30 | 伊文萨思粘合技术公司 | 作为焊盘的tsv |
US11011494B2 (en) | 2018-08-31 | 2021-05-18 | Invensas Bonding Technologies, Inc. | Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics |
US11158573B2 (en) | 2018-10-22 | 2021-10-26 | Invensas Bonding Technologies, Inc. | Interconnect structures |
US11264357B1 (en) | 2020-10-20 | 2022-03-01 | Invensas Corporation | Mixed exposure for large die |
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DE1764125A1 (de) * | 1968-04-05 | 1971-05-06 | Philips Nv | Halbleitervorrichtung mit zwei in Gegentakt geschalteten Kapazitaetsdioden |
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JPS5543864A (en) * | 1978-09-25 | 1980-03-27 | Hitachi Ltd | Mis semiconductor device |
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JPS5775464A (en) * | 1980-10-28 | 1982-05-12 | Semiconductor Res Found | Semiconductor device controlled by tunnel injection |
JPS57141962A (en) * | 1981-02-27 | 1982-09-02 | Hitachi Ltd | Semiconductor integrated circuit device |
EP0059264A1 (de) * | 1981-03-02 | 1982-09-08 | Rockwell International Corporation | Lateraler NPN-Transistor mit minimaler Beeinflussung durch das Substrat und Verfahren zu seiner Herstellung |
GB2105106A (en) * | 1981-07-17 | 1983-03-16 | Clarion Co Ltd | Variable capaciter |
JPS58127379A (ja) * | 1982-01-25 | 1983-07-29 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁ゲ−ト形トランジスタ |
EP0137992A3 (de) * | 1983-09-29 | 1987-01-21 | Fujitsu Limited | Lateraler, bipolarer Transistor hergestellt in einem Silizium-auf-Isolator(SOI)-Substrat |
JPS6081864A (ja) * | 1983-10-12 | 1985-05-09 | Fujitsu Ltd | ラテラル型トランジスタ |
JPS60100469A (ja) * | 1983-11-05 | 1985-06-04 | Nissan Motor Co Ltd | 半導体装置 |
GB2150753B (en) * | 1983-11-30 | 1987-04-01 | Toshiba Kk | Semiconductor device |
JPS60196974A (ja) * | 1984-03-19 | 1985-10-05 | Toshiba Corp | 導電変調型mosfet |
US4672407A (en) * | 1984-05-30 | 1987-06-09 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
IT1214806B (it) * | 1984-09-21 | 1990-01-18 | Ates Componenti Elettron | Dispositivo integrato monolitico di potenza e semiconduttore |
DE3587797T2 (de) * | 1984-10-31 | 1994-07-28 | Texas Instruments Inc | Transistor mit horizontaler Struktur und Verfahren zu dessen Herstellung. |
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DE3689680T2 (de) * | 1985-09-30 | 1994-06-23 | Toshiba Kawasaki Kk | Mittels Steuerelektrode abschaltbarer Thyristor mit unabhängigen Zünd-/Lösch-Kontrolltransistoren. |
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JPS63198367A (ja) * | 1987-02-13 | 1988-08-17 | Toshiba Corp | 半導体装置 |
JP2685819B2 (ja) * | 1988-03-31 | 1997-12-03 | 株式会社東芝 | 誘電体分離半導体基板とその製造方法 |
JPH01318266A (ja) * | 1988-06-17 | 1989-12-22 | Sanyo Electric Co Ltd | 可変容量ダイオード |
JPH023238A (ja) * | 1988-06-20 | 1990-01-08 | Nissan Motor Co Ltd | 薄膜バイポーラトランジスタの製造方法 |
JPH02102569A (ja) * | 1988-10-12 | 1990-04-16 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置 |
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1991
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- 1991-07-02 DE DE1991628566 patent/DE69128566T2/de not_active Expired - Fee Related
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-
1994
- 1994-01-24 US US08/191,132 patent/US5477065A/en not_active Expired - Lifetime
-
1996
- 1996-11-08 US US08/745,248 patent/US5714782A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04218953A (ja) | 1992-08-10 |
JP3190057B2 (ja) | 2001-07-16 |
EP0465227A3 (en) | 1992-10-07 |
US5477065A (en) | 1995-12-19 |
EP0740338A2 (de) | 1996-10-30 |
DE69128566T2 (de) | 1998-05-14 |
EP0465227B1 (de) | 1998-01-07 |
EP0740338A3 (de) | 1998-01-07 |
US5714782A (en) | 1998-02-03 |
EP0465227A2 (de) | 1992-01-08 |
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