DE69127040D1 - Integrierte Halbleiterschaltung aus P-Kanal MOS-Transistoren mit verschiedenen Schwellenspannungen - Google Patents

Integrierte Halbleiterschaltung aus P-Kanal MOS-Transistoren mit verschiedenen Schwellenspannungen

Info

Publication number
DE69127040D1
DE69127040D1 DE69127040T DE69127040T DE69127040D1 DE 69127040 D1 DE69127040 D1 DE 69127040D1 DE 69127040 T DE69127040 T DE 69127040T DE 69127040 T DE69127040 T DE 69127040T DE 69127040 D1 DE69127040 D1 DE 69127040D1
Authority
DE
Germany
Prior art keywords
channel mos
mos transistors
threshold voltages
semiconductor circuit
integrated semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69127040T
Other languages
English (en)
Other versions
DE69127040T2 (de
Inventor
Yoshinori Okajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69127040D1 publication Critical patent/DE69127040D1/de
Application granted granted Critical
Publication of DE69127040T2 publication Critical patent/DE69127040T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE69127040T 1990-09-20 1991-09-18 Integrierte Halbleiterschaltung aus P-Kanal MOS-Transistoren mit verschiedenen Schwellenspannungen Expired - Fee Related DE69127040T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2252525A JP2839203B2 (ja) 1990-09-20 1990-09-20 半導体集積回路

Publications (2)

Publication Number Publication Date
DE69127040D1 true DE69127040D1 (de) 1997-09-04
DE69127040T2 DE69127040T2 (de) 1998-01-22

Family

ID=17238584

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69127040T Expired - Fee Related DE69127040T2 (de) 1990-09-20 1991-09-18 Integrierte Halbleiterschaltung aus P-Kanal MOS-Transistoren mit verschiedenen Schwellenspannungen

Country Status (4)

Country Link
EP (1) EP0477758B1 (de)
JP (1) JP2839203B2 (de)
KR (1) KR950002275B1 (de)
DE (1) DE69127040T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3566608B2 (ja) * 1999-12-28 2004-09-15 Ｎｅｃエレクトロニクス株式会社 半導体集積回路
KR100862832B1 (ko) * 2002-08-28 2008-10-13 주식회사 포스코 고로의 미분탄 취입 랜스의 취외 및 교정 장치

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5822423A (ja) * 1981-07-31 1983-02-09 Hitachi Ltd 基準電圧発生回路
JPS59112640A (ja) * 1982-12-18 1984-06-29 Toshiba Corp 半導体集積回路

Also Published As

Publication number Publication date
KR920007176A (ko) 1992-04-28
EP0477758B1 (de) 1997-07-30
KR950002275B1 (ko) 1995-03-15
DE69127040T2 (de) 1998-01-22
JP2839203B2 (ja) 1998-12-16
EP0477758A2 (de) 1992-04-01
EP0477758A3 (en) 1992-06-03
JPH04129419A (ja) 1992-04-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee