DE69025989D1 - Integrierte Halbleiterschaltung und Verfahren zu deren Herstellung - Google Patents
Integrierte Halbleiterschaltung und Verfahren zu deren HerstellungInfo
- Publication number
- DE69025989D1 DE69025989D1 DE69025989T DE69025989T DE69025989D1 DE 69025989 D1 DE69025989 D1 DE 69025989D1 DE 69025989 T DE69025989 T DE 69025989T DE 69025989 T DE69025989 T DE 69025989T DE 69025989 D1 DE69025989 D1 DE 69025989D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- semiconductor circuit
- integrated semiconductor
- integrated
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1160055A JPH07105456B2 (ja) | 1989-06-22 | 1989-06-22 | 半導体集積回路とその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69025989D1 true DE69025989D1 (de) | 1996-04-25 |
DE69025989T2 DE69025989T2 (de) | 1996-09-05 |
Family
ID=15706933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69025989T Expired - Fee Related DE69025989T2 (de) | 1989-06-22 | 1990-06-22 | Integrierte Halbleiterschaltung und Verfahren zu deren Herstellung |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0404180B1 (de) |
JP (1) | JPH07105456B2 (de) |
KR (1) | KR930005505B1 (de) |
DE (1) | DE69025989T2 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008177620A (ja) * | 2008-04-11 | 2008-07-31 | Fujifilm Corp | 固体撮像装置 |
JP2023122791A (ja) * | 2022-02-24 | 2023-09-05 | 浜松ホトニクス株式会社 | 固体撮像素子、及び固体撮像素子の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4152715A (en) * | 1977-11-28 | 1979-05-01 | The United States Of America As Represented By The Secretary Of The Army | Silicon base CCD-bipolar transistor compatible methods and products |
US4253168A (en) * | 1978-10-23 | 1981-02-24 | Westinghouse Electric Corp. | CCD Signal processor |
JPS57103347A (en) * | 1980-12-18 | 1982-06-26 | Clarion Co Ltd | Manufacture of integrated circuit |
US4492717A (en) * | 1981-07-27 | 1985-01-08 | International Business Machines Corporation | Method for forming a planarized integrated circuit |
JPS60141157U (ja) * | 1984-02-25 | 1985-09-18 | ソニー株式会社 | 電荷結合素子 |
FR2591619B1 (fr) * | 1985-12-16 | 1988-03-25 | Placencia De Las Armas Socieda | Bloc de cames a battant pour la commande du peigne des metiers a tisser |
-
1989
- 1989-06-22 JP JP1160055A patent/JPH07105456B2/ja not_active Expired - Fee Related
-
1990
- 1990-06-22 EP EP90111880A patent/EP0404180B1/de not_active Expired - Lifetime
- 1990-06-22 KR KR1019900009245A patent/KR930005505B1/ko not_active IP Right Cessation
- 1990-06-22 DE DE69025989T patent/DE69025989T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0404180A3 (de) | 1991-09-11 |
KR910001972A (ko) | 1991-01-31 |
JPH07105456B2 (ja) | 1995-11-13 |
KR930005505B1 (ko) | 1993-06-22 |
DE69025989T2 (de) | 1996-09-05 |
EP0404180A2 (de) | 1990-12-27 |
JPH0324759A (ja) | 1991-02-01 |
EP0404180B1 (de) | 1996-03-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |