DE69022308D1 - Bipolare Halbleitervorrichtung und Verfahren zu deren Herstellung. - Google Patents
Bipolare Halbleitervorrichtung und Verfahren zu deren Herstellung.Info
- Publication number
- DE69022308D1 DE69022308D1 DE69022308T DE69022308T DE69022308D1 DE 69022308 D1 DE69022308 D1 DE 69022308D1 DE 69022308 T DE69022308 T DE 69022308T DE 69022308 T DE69022308 T DE 69022308T DE 69022308 D1 DE69022308 D1 DE 69022308D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- same
- semiconductor device
- bipolar semiconductor
- bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6625—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
- H01L21/28531—Making of side-wall contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1176236A JPH0812866B2 (ja) | 1989-07-07 | 1989-07-07 | バイポーラ型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69022308D1 true DE69022308D1 (de) | 1995-10-19 |
DE69022308T2 DE69022308T2 (de) | 1996-03-14 |
Family
ID=16010020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69022308T Expired - Fee Related DE69022308T2 (de) | 1989-07-07 | 1990-07-06 | Bipolare Halbleitervorrichtung und Verfahren zu deren Herstellung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5065210A (de) |
EP (1) | EP0406883B1 (de) |
JP (1) | JPH0812866B2 (de) |
KR (1) | KR940004452B1 (de) |
DE (1) | DE69022308T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5194926A (en) * | 1991-10-03 | 1993-03-16 | Motorola Inc. | Semiconductor device having an inverse-T bipolar transistor |
US5341023A (en) * | 1992-06-18 | 1994-08-23 | International Business Machines Corporation | Novel vertical-gate CMOS compatible lateral bipolar transistor |
JP3258123B2 (ja) * | 1993-03-15 | 2002-02-18 | 株式会社東芝 | 半導体装置 |
US5607865A (en) * | 1995-01-27 | 1997-03-04 | Goldstar Electron Co., Ltd. | Structure and fabrication method for a thin film transistor |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4688073A (en) * | 1981-03-30 | 1987-08-18 | Goth George R | Lateral device structures using self-aligned fabrication techniques |
US4764799A (en) * | 1985-05-28 | 1988-08-16 | International Business Machines Corporation | Stud-defined integrated circuit structure |
US4738624A (en) * | 1987-04-13 | 1988-04-19 | International Business Machines Corporation | Bipolar transistor structure with self-aligned device and isolation and fabrication process therefor |
JP2565162B2 (ja) * | 1987-05-21 | 1996-12-18 | ソニー株式会社 | バイポ−ラトランジスタおよびその製造方法 |
JPS63292673A (ja) * | 1987-05-25 | 1988-11-29 | Nec Corp | 横型バイポ−ラトランジスタ |
JPH0626216B2 (ja) * | 1987-06-02 | 1994-04-06 | 日本電気株式会社 | 半導体装置の製造方法 |
EP0306213A3 (de) * | 1987-09-02 | 1990-05-30 | AT&T Corp. | Submikron-Bipolartransistor mit seitlichen Kontakten |
US4860077A (en) * | 1987-09-28 | 1989-08-22 | Motorola, Inc. | Vertical semiconductor device having a sidewall emitter |
JPH01241167A (ja) * | 1988-03-23 | 1989-09-26 | Hitachi Ltd | 半導体装置とその製造方法 |
-
1989
- 1989-07-07 JP JP1176236A patent/JPH0812866B2/ja not_active Expired - Fee Related
-
1990
- 1990-07-05 KR KR1019900010152A patent/KR940004452B1/ko not_active IP Right Cessation
- 1990-07-05 US US07/548,609 patent/US5065210A/en not_active Expired - Lifetime
- 1990-07-06 DE DE69022308T patent/DE69022308T2/de not_active Expired - Fee Related
- 1990-07-06 EP EP90112934A patent/EP0406883B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0340436A (ja) | 1991-02-21 |
US5065210A (en) | 1991-11-12 |
KR940004452B1 (ko) | 1994-05-25 |
DE69022308T2 (de) | 1996-03-14 |
EP0406883A3 (en) | 1992-01-22 |
EP0406883B1 (de) | 1995-09-13 |
KR910003806A (ko) | 1991-02-28 |
EP0406883A2 (de) | 1991-01-09 |
JPH0812866B2 (ja) | 1996-02-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |