DE69013310D1 - Gehäuse für Leistungshalbleiterbauelemente. - Google Patents

Gehäuse für Leistungshalbleiterbauelemente.

Info

Publication number
DE69013310D1
DE69013310D1 DE69013310T DE69013310T DE69013310D1 DE 69013310 D1 DE69013310 D1 DE 69013310D1 DE 69013310 T DE69013310 T DE 69013310T DE 69013310 T DE69013310 T DE 69013310T DE 69013310 D1 DE69013310 D1 DE 69013310D1
Authority
DE
Germany
Prior art keywords
housing
power semiconductor
semiconductor components
components
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69013310T
Other languages
English (en)
Other versions
DE69013310T2 (de
Inventor
John Andrew Costello
Prosenjit Rai-Choudhury
Harry Buhay
Kenneth Joseph Petrosky
Richard Regis Papania
Gene Anthony Madia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of DE69013310D1 publication Critical patent/DE69013310D1/de
Publication of DE69013310T2 publication Critical patent/DE69013310T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
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    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE69013310T 1989-12-22 1990-12-06 Gehäuse für Leistungshalbleiterbauelemente. Expired - Fee Related DE69013310T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US45328789A 1989-12-22 1989-12-22

Publications (2)

Publication Number Publication Date
DE69013310D1 true DE69013310D1 (de) 1994-11-17
DE69013310T2 DE69013310T2 (de) 1995-04-27

Family

ID=23799949

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69013310T Expired - Fee Related DE69013310T2 (de) 1989-12-22 1990-12-06 Gehäuse für Leistungshalbleiterbauelemente.

Country Status (4)

Country Link
US (1) US5814880A (de)
EP (1) EP0434264B1 (de)
JP (1) JPH04144259A (de)
DE (1) DE69013310T2 (de)

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DE4222474A1 (de) * 1992-07-09 1994-01-13 Bosch Gmbh Robert Montageeinheit für Mehrlagenhybrid mit Leistungsbauelementen
US5395679A (en) * 1993-03-29 1995-03-07 Delco Electronics Corp. Ultra-thick thick films for thermal management and current carrying capabilities in hybrid circuits
US5527627A (en) * 1993-03-29 1996-06-18 Delco Electronics Corp. Ink composition for an ultra-thick thick film for thermal management of a hybrid circuit
US5965193A (en) * 1994-04-11 1999-10-12 Dowa Mining Co., Ltd. Process for preparing a ceramic electronic circuit board and process for preparing aluminum or aluminum alloy bonded ceramic material
FR2721437B1 (fr) * 1994-06-17 1996-09-27 Xeram N Boîtier hermétique à dissipation thermique améliorée notamment pour l'encapsulation de composants ou circuits électroniques et procédé de fabrication.
US5726605A (en) * 1996-04-14 1998-03-10 Northrop Grumman Corporation Silicon carbide RF power module
JP3301355B2 (ja) * 1997-07-30 2002-07-15 日立電線株式会社 半導体装置、半導体装置用ｔａｂテープ及びその製造方法、並びに半導体装置の製造方法
US6093960A (en) * 1999-06-11 2000-07-25 Advanced Semiconductor Engineering, Inc. Semiconductor package having a heat spreader capable of preventing being soldered and enhancing adhesion and electrical performance
US6627987B1 (en) * 2001-06-13 2003-09-30 Amkor Technology, Inc. Ceramic semiconductor package and method for fabricating the package
CN1292474C (zh) * 2001-11-12 2006-12-27 株式会社新王材料 电子部件用封装体、其盖体、其盖体用盖材以及其盖材的制法
US6818477B2 (en) * 2001-11-26 2004-11-16 Powerwave Technologies, Inc. Method of mounting a component in an edge-plated hole formed in a printed circuit board
US7377419B1 (en) * 2004-04-01 2008-05-27 The United States Of America As Represented By The United States Department Of Energy Brazing open cell reticulated copper foam to stainless steel tubing with vacuum furnace brazed gold/indium alloy plating
DE102004047659A1 (de) * 2004-09-30 2006-04-13 Infineon Technologies Ag Verfahren zur Herstellung eines Flansches für ein Halbleiterbauelement sowie nach diesem Verfahren hergestellter Flansch
US7521789B1 (en) * 2004-12-18 2009-04-21 Rinehart Motion Systems, Llc Electrical assembly having heat sink protrusions
JP2006334795A (ja) * 2005-05-31 2006-12-14 Victor Co Of Japan Ltd 成形金型
FR2899763B1 (fr) * 2006-04-06 2008-07-04 Valeo Electronique Sys Liaison Support, notamment pour composant electronique de puissance, module de puissance comprenant ce support, ensemble comprenant le module et organe electrique pilote par ce module
US8837164B2 (en) * 2009-01-22 2014-09-16 Kyocera Corporation Substrate for mounting device and package for housing device employing the same
JP2014207388A (ja) * 2013-04-15 2014-10-30 株式会社東芝 半導体パッケージ
FR3007892B1 (fr) * 2013-06-27 2015-07-31 Commissariat Energie Atomique Procede de transfert d'une couche mince avec apport d'energie thermique a une zone fragilisee via une couche inductive
CN103747653B (zh) * 2013-12-19 2016-04-06 西安电子工程研究所 T/r组件的散热结构及结构中热管的设计方法
JP7261545B2 (ja) * 2018-07-03 2023-04-20 新光電気工業株式会社 配線基板、半導体パッケージ及び配線基板の製造方法
JP7233621B1 (ja) * 2020-03-31 2023-03-06 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト 熱性能が向上したパワーモジュールデバイス
CN115286415A (zh) * 2022-06-28 2022-11-04 中国科学院合肥物质科学研究院 氮化铝覆铜陶瓷及其制备方法和应用
CN118073208A (zh) * 2024-04-16 2024-05-24 四川九洲电器集团有限责任公司 一种微波功率放大器小型化制备方法及微波功率放大器

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US5814880A (en) 1998-09-29
DE69013310T2 (de) 1995-04-27
EP0434264B1 (de) 1994-10-12
EP0434264A3 (en) 1991-12-18
JPH04144259A (ja) 1992-05-18
EP0434264A2 (de) 1991-06-26

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