DE69010020D1 - Verfahren und Vorrichtung zum Transport von Halbleiterplättchen in einem vertikalen Diffusionsapparat mit chemischer Aufdampfung. - Google Patents

Verfahren und Vorrichtung zum Transport von Halbleiterplättchen in einem vertikalen Diffusionsapparat mit chemischer Aufdampfung.

Info

Publication number
DE69010020D1
DE69010020D1 DE69010020T DE69010020T DE69010020D1 DE 69010020 D1 DE69010020 D1 DE 69010020D1 DE 69010020 T DE69010020 T DE 69010020T DE 69010020 T DE69010020 T DE 69010020T DE 69010020 D1 DE69010020 D1 DE 69010020D1
Authority
DE
Germany
Prior art keywords
vapor deposition
chemical vapor
semiconductor wafers
vertical diffusion
diffusion apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69010020T
Other languages
English (en)
Other versions
DE69010020T2 (de
Inventor
Yasuhiro Harada
Toshikazu Karino
Ryoji Saito
Koji Tometsuka
Shoichiro Izumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Application granted granted Critical
Publication of DE69010020D1 publication Critical patent/DE69010020D1/de
Publication of DE69010020T2 publication Critical patent/DE69010020T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer
DE69010020T 1989-01-28 1990-01-18 Verfahren und Vorrichtung zum Transport von Halbleiterplättchen in einem vertikalen Diffusionsapparat mit chemischer Aufdampfung. Expired - Fee Related DE69010020T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1019230A JPH07105357B2 (ja) 1989-01-28 1989-01-28 縦型ｃｖｄ拡散装置に於けるウェーハ移載方法及び装置

Publications (2)

Publication Number Publication Date
DE69010020D1 true DE69010020D1 (de) 1994-07-28
DE69010020T2 DE69010020T2 (de) 1994-12-08

Family

ID=11993581

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69010020T Expired - Fee Related DE69010020T2 (de) 1989-01-28 1990-01-18 Verfahren und Vorrichtung zum Transport von Halbleiterplättchen in einem vertikalen Diffusionsapparat mit chemischer Aufdampfung.

Country Status (5)

Country Link
US (1) US5112641A (de)
EP (1) EP0381338B1 (de)
JP (1) JPH07105357B2 (de)
KR (1) KR930001285B1 (de)
DE (1) DE69010020T2 (de)

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JP2644912B2 (ja) 1990-08-29 1997-08-25 株式会社日立製作所 真空処理装置及びその運転方法
USRE39756E1 (en) 1990-08-29 2007-08-07 Hitachi, Ltd. Vacuum processing operating method with wafers, substrates and/or semiconductors
USRE39824E1 (en) 1990-08-29 2007-09-11 Hitachi, Ltd. Vacuum processing apparatus and operating method with wafers, substrates and/or semiconductors
US7089680B1 (en) 1990-08-29 2006-08-15 Hitachi, Ltd. Vacuum processing apparatus and operating method therefor
CH687987A5 (de) * 1993-05-03 1997-04-15 Balzers Hochvakuum Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer.
US6296735B1 (en) 1993-05-03 2001-10-02 Unaxis Balzers Aktiengesellschaft Plasma treatment apparatus and method for operation same
CH687986A5 (de) * 1993-05-03 1997-04-15 Balzers Hochvakuum Plasmabehandlungsanlage und Verfahren zu deren Betrieb.
JP3654684B2 (ja) * 1995-05-01 2005-06-02 東京エレクトロン株式会社 処理方法及び処理装置
US6481956B1 (en) * 1995-10-27 2002-11-19 Brooks Automation Inc. Method of transferring substrates with two different substrate holding end effectors
US5829969A (en) * 1996-04-19 1998-11-03 Tokyo Electron Ltd. Vertical heat treating apparatus
JP3225431B2 (ja) * 1996-12-25 2001-11-05 住友イートンノバ株式会社 イオン注入装置におけるウエハ搬送装置
US6450755B1 (en) 1998-07-10 2002-09-17 Equipe Technologies Dual arm substrate handling robot with a batch loader
US6119673A (en) * 1998-12-02 2000-09-19 Tokyo Seimitsu Co., Ltd. Wafer retrieval method in multiple slicing wire saw
JP4232307B2 (ja) * 1999-03-23 2009-03-04 東京エレクトロン株式会社 バッチ式熱処理装置の運用方法
US20010048867A1 (en) * 2000-03-29 2001-12-06 Lebar Technology, Inc. Method and apparatus for processing semiconductor wafers
US6303398B1 (en) * 2000-05-04 2001-10-16 Advanced Micro Devices, Inc. Method and system of managing wafers in a semiconductor device production facility
JP3497450B2 (ja) * 2000-07-06 2004-02-16 東京エレクトロン株式会社 バッチ式熱処理装置及びその制御方法
JP2002043229A (ja) * 2000-07-25 2002-02-08 Hitachi Kokusai Electric Inc 半導体製造装置
EP1219397A1 (de) * 2000-12-27 2002-07-03 Optical Technologies Italia S.p.A. Verfahren und Vorrichtung zum Laden, Entladen und Übertragen von Halbleiterstäben
US6828218B2 (en) 2001-05-31 2004-12-07 Samsung Electronics Co., Ltd. Method of forming a thin film using atomic layer deposition
US6975917B2 (en) * 2001-08-08 2005-12-13 Tokyo Electron Limited Heat treatment method and heat treatment device
KR100672634B1 (ko) * 2001-12-19 2007-02-09 엘지.필립스 엘시디 주식회사 액정표시소자의 기판 반송 장치 및 방법
US20040013503A1 (en) * 2002-07-22 2004-01-22 Jaswant Sandhu Robotic hand with multi-wafer end effector
JP2004103990A (ja) * 2002-09-12 2004-04-02 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法
US6849131B2 (en) * 2002-10-05 2005-02-01 Taiwan Semiconductor Manufacturing Co., Ltd Truncated dummy plate for process furnace
KR101229132B1 (ko) * 2003-07-11 2013-02-01 테크-셈 아크티엔게젤샤프트 전자부품들을 제조하는 동안 판형상의 기질들을 저장하고 전달하기 위한 장치
DE10340511B3 (de) * 2003-09-03 2004-11-11 Infineon Technologies Ag Verfahren zur Kontrolle von Batch-Anlagen
US8747052B2 (en) * 2006-11-22 2014-06-10 Beijing Sevenstar Electronics Co., Ltd. Automation for high throughput semiconductor batch-wafer processing equipment
JP5581669B2 (ja) * 2009-03-10 2014-09-03 株式会社日立製作所 水処理方法、水処理部材及び水処理設備
US8759084B2 (en) * 2010-01-22 2014-06-24 Michael J. Nichols Self-sterilizing automated incubator
JP5715904B2 (ja) * 2011-07-29 2015-05-13 東京エレクトロン株式会社 熱処理装置、及びこれに基板を搬送する基板搬送方法
CN103515266B (zh) * 2012-06-18 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 用于整理料盒内晶片的整理装置及具有其的半导体设备
KR20140033911A (ko) 2012-09-11 2014-03-19 에이에스엠 아이피 홀딩 비.브이. 증착 장치 및 증착 방법
US10553471B2 (en) * 2014-01-28 2020-02-04 Kawasaki Jukogyo Kabushiki Kaisha Substrate conveying system and method
CN111033714B (zh) * 2017-09-27 2023-12-29 株式会社国际电气 基板处理装置、半导体器件的制造方法及记录介质
CN112384056A (zh) * 2020-11-23 2021-02-19 桂平悠品智能科技有限公司 一种半导体器件自动夹持安装机构

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JPS4969073A (de) * 1972-11-08 1974-07-04
US4402613A (en) * 1979-03-29 1983-09-06 Advanced Semiconductor Materials America Surface inspection system
JPS58218115A (ja) * 1982-06-14 1983-12-19 Sony Corp 熱処理装置
JPS60182735A (ja) * 1984-02-29 1985-09-18 Tomuko:Kk ウエ−ハの配列ピツチ変更装置
US4645401A (en) * 1984-06-13 1987-02-24 Disc Technology Corporation Magnetic disc handling system
US4759681A (en) * 1985-01-22 1988-07-26 Nissin Electric Co. Ltd. End station for an ion implantation apparatus
JPS61291335A (ja) * 1985-06-19 1986-12-22 Denkoo:Kk 半導体移換え装置
US4966519A (en) * 1985-10-24 1990-10-30 Texas Instruments Incorporated Integrated circuit processing system
JPS62130534A (ja) * 1985-12-02 1987-06-12 Deisuko Saiyaa Japan:Kk 縦型ウエ−ハ処理装置のためのウエ−ハ搬送装置
JPS62130524A (ja) * 1985-12-02 1987-06-12 Hitachi Ltd プラズマ処理装置
US4770590A (en) * 1986-05-16 1988-09-13 Silicon Valley Group, Inc. Method and apparatus for transferring wafers between cassettes and a boat
US4775281A (en) * 1986-12-02 1988-10-04 Teradyne, Inc. Apparatus and method for loading and unloading wafers
JPS63155632A (ja) * 1986-12-18 1988-06-28 Nitto Electric Ind Co Ltd 半導体ウエハの自動貼付け装置
JPH0666376B2 (ja) * 1987-06-17 1994-08-24 国際電気株式会社 縦形半導体製造装置におけるウェ−ハ搬送方法
DE3725358A1 (de) * 1987-07-30 1989-02-09 Telog Systems Gmbh Vorrichtung und verfahren zur oberflaechenbehandlung von materialien
US4955775A (en) * 1987-12-12 1990-09-11 Tel Sagami Limited Semiconductor wafer treating apparatus
US4957406A (en) * 1989-05-08 1990-09-18 Intelmatec Corporation Apparatus for transferring disks from one cassette to another with different pitch

Also Published As

Publication number Publication date
DE69010020T2 (de) 1994-12-08
KR900012329A (ko) 1990-08-03
EP0381338B1 (de) 1994-06-22
EP0381338A2 (de) 1990-08-08
JPH02297925A (ja) 1990-12-10
KR930001285B1 (ko) 1993-02-25
EP0381338A3 (de) 1991-11-13
JPH07105357B2 (ja) 1995-11-13
US5112641A (en) 1992-05-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8339 Ceased/non-payment of the annual fee