DE68926087D1 - Methode zur Bildung eines Schwach-Kopplungs-Josephson-Übergangs und supraleitende Einrichtung, welche diesen Übergang benutzt - Google Patents
Methode zur Bildung eines Schwach-Kopplungs-Josephson-Übergangs und supraleitende Einrichtung, welche diesen Übergang benutztInfo
- Publication number
- DE68926087D1 DE68926087D1 DE68926087T DE68926087T DE68926087D1 DE 68926087 D1 DE68926087 D1 DE 68926087D1 DE 68926087 T DE68926087 T DE 68926087T DE 68926087 T DE68926087 T DE 68926087T DE 68926087 D1 DE68926087 D1 DE 68926087D1
- Authority
- DE
- Germany
- Prior art keywords
- junction
- forming
- superconducting device
- weak coupling
- coupling josephson
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
- H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
- Y10S505/702—Josephson junction present
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22868688 | 1988-09-14 | ||
JP22868788 | 1988-09-14 | ||
JP26149288 | 1988-10-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68926087D1 true DE68926087D1 (de) | 1996-05-02 |
DE68926087T2 DE68926087T2 (de) | 1996-11-28 |
Family
ID=27331423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68926087T Expired - Fee Related DE68926087T2 (de) | 1988-09-14 | 1989-09-12 | Methode zur Bildung eines Schwach-Kopplungs-Josephson-Übergangs und supraleitende Einrichtung, welche diesen Übergang benutzt |
Country Status (4)
Country | Link |
---|---|
US (1) | US5077266A (de) |
EP (1) | EP0364101B1 (de) |
JP (1) | JP3064306B2 (de) |
DE (1) | DE68926087T2 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5128316A (en) * | 1990-06-04 | 1992-07-07 | Eastman Kodak Company | Articles containing a cubic perovskite crystal structure |
DE69114435T2 (de) * | 1990-09-27 | 1996-06-13 | Sumitomo Electric Industries | Supraleitendes Bauelement und dessen Herstellungsverfahren. |
DE4034644A1 (de) * | 1990-10-31 | 1992-05-14 | Forschungszentrum Juelich Gmbh | Hochohmiges material mit se ba(pfeil abwaerts)2(pfeil abwaerts)cu(pfeil abwaerts)3(pfeil abwaerts)o(pfeil abwaerts)7(pfeil abwaerts) - struktur |
JP2764115B2 (ja) † | 1991-02-26 | 1998-06-11 | セイコーインスツルメンツ株式会社 | 高感度磁場検出器の製造方法 |
US5157466A (en) * | 1991-03-19 | 1992-10-20 | Conductus, Inc. | Grain boundary junctions in high temperature superconductor films |
DE4109765C2 (de) * | 1991-03-25 | 2002-10-10 | Siemens Ag | Korngrenzen-Josephsonkontaktelement und Verfahren zu dessen Herstellung |
DE4109766C2 (de) * | 1991-03-25 | 1999-02-18 | Siemens Ag | Verfahren zur Herstellung eines Korngrenzen-Josephsonkontaktes |
DE4212028C2 (de) * | 1991-05-08 | 1994-06-16 | Siemens Ag | Korngrenzen-Josephsonelement mit metalloxidischem Hochtemperatursupraleiter-Material, Verfahren zu dessen Herstellung sowie Verwendung des Elementes |
JPH05129671A (ja) * | 1991-10-31 | 1993-05-25 | Sharp Corp | 超電導磁気抵抗効果素子およびその製造方法 |
JPH05148095A (ja) * | 1991-11-30 | 1993-06-15 | Sumitomo Electric Ind Ltd | 基板成膜面に段差を形成する方法 |
US5612290A (en) * | 1992-05-29 | 1997-03-18 | Sumitomo Electric Industries, Ltd. | Josephson junction device formed of oxide superconductor |
JP3568547B2 (ja) * | 1992-05-29 | 2004-09-22 | 住友電気工業株式会社 | ジョセフソン接合構造体 |
DE69333799T2 (de) * | 1992-07-28 | 2006-01-19 | Nippon Telegraph And Telephone Corp. | Bauelement mit Gitteranpassung und Verfahren zu seiner Herstellung |
DE4227163C2 (de) * | 1992-08-17 | 1995-08-10 | Siemens Ag | Josephson-Kontakt zwischen zwei Leiterstücken aus Hoch-T¶c¶-Supraleitermaterial und Verfahren zur Herstellung dieses Kontaktes |
US5358928A (en) * | 1992-09-22 | 1994-10-25 | Sandia Corporation | High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O |
JP3149996B2 (ja) * | 1992-11-10 | 2001-03-26 | 財団法人国際超電導産業技術研究センター | ジョセフソン結合の作製法 |
JPH06291374A (ja) * | 1993-03-31 | 1994-10-18 | Sumitomo Electric Ind Ltd | ジョセフソン接合素子 |
DE4317966C2 (de) * | 1993-05-28 | 2002-09-12 | Siemens Ag | Squid-Einrichtung mit einer supraleitenden Detektionsfläche |
JP2994183B2 (ja) * | 1993-09-21 | 1999-12-27 | 財団法人国際超電導産業技術研究センター | 超電導素子およびその作製方法 |
FI111198B (fi) * | 1993-12-27 | 2003-06-13 | Sumitomo Electric Industries | Menetelmä portaan muodostamiseksi substraatin kasvatuspinnalle oksidisuprajohdetta käyttävää suprajohtavaa laitetta varten sekä menetelmä porrastyyppisen Josephson-liitoslaitteen valmistamiseksi |
JP2963614B2 (ja) * | 1994-04-01 | 1999-10-18 | 財団法人国際超電導産業技術研究センター | 酸化物超電導体接合素子の製造方法 |
DE4433331C2 (de) * | 1994-09-19 | 2002-06-20 | Siemens Ag | Magnetfeldempfindliche SQUID-Sensoreinrichtung mit Flußtransformator unter Verwendung von Hoch-T¶c¶-Supraleitermaterial |
US5543630A (en) * | 1995-01-31 | 1996-08-06 | The United States Of America As Represented By The Secretary Of The Air Force | High Tc superconducting devices on bi-crystal substrates |
DE19505060C2 (de) * | 1995-02-15 | 2003-04-10 | Siemens Ag | Magnetfeldempfindliche SQUID-Einrichtung mit Leiterteilen aus Hoch-T¶c¶-Supraleitermaterialien |
DE19509230C2 (de) * | 1995-03-17 | 2003-04-17 | Siemens Ag | Hochsymmetrische Gradiometer-SQUID-Einrichtung mit Leiterbahnen aus Hoch-T¶c¶-Supraleitermaterial |
JPH08316535A (ja) * | 1995-05-19 | 1996-11-29 | Fujitsu Ltd | ジョセフソン素子及びその製造方法 |
JPH09121064A (ja) * | 1995-10-26 | 1997-05-06 | Fujitsu Ltd | 高温超電導ジョセフソン接合素子 |
DE19619585C2 (de) * | 1996-05-15 | 1999-11-11 | Bosch Gmbh Robert | Schaltbarer planarer Hochfrequenzresonator und Filter |
JP2002134803A (ja) * | 1997-09-30 | 2002-05-10 | Sentan Kagaku Gijutsu Incubation Center:Kk | 共プレーナ型ジョセフソン素子の製造方法 |
US7365271B2 (en) * | 2003-12-31 | 2008-04-29 | Superpower, Inc. | Superconducting articles, and methods for forming and using same |
WO2007001383A2 (en) * | 2004-09-22 | 2007-01-04 | Superpower, Inc. | Superconductor components |
US8571614B1 (en) | 2009-10-12 | 2013-10-29 | Hypres, Inc. | Low-power biasing networks for superconducting integrated circuits |
US10222416B1 (en) | 2015-04-14 | 2019-03-05 | Hypres, Inc. | System and method for array diagnostics in superconducting integrated circuit |
US11563162B2 (en) * | 2020-01-09 | 2023-01-24 | International Business Machines Corporation | Epitaxial Josephson junction transmon device |
US11538977B2 (en) | 2020-12-09 | 2022-12-27 | International Business Machines Corporation | Qubits with ion implant Josephson junctions |
CN115332433A (zh) * | 2022-08-26 | 2022-11-11 | 天津大学 | 一种平面约瑟夫森结的制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4316785A (en) * | 1979-11-05 | 1982-02-23 | Nippon Telegraph & Telephone Public Corporation | Oxide superconductor Josephson junction and fabrication method therefor |
US4366494A (en) * | 1980-05-20 | 1982-12-28 | Rikagaku Kenkyusho | Josephson junction and a method of making the same |
JPH01161881A (ja) * | 1987-12-18 | 1989-06-26 | Nec Corp | ジョセフソン素子およびその製造方法 |
JPH01182949A (ja) * | 1988-01-13 | 1989-07-20 | Sharp Corp | 超電導体光磁気記録方法 |
JPH01202876A (ja) * | 1988-02-09 | 1989-08-15 | Canon Inc | ジョセフソン接合素子の作製方法 |
US5162298A (en) * | 1988-02-16 | 1992-11-10 | International Business Machines Corporation | Grain boundary junction devices using high tc superconductors |
US4940693A (en) * | 1988-07-28 | 1990-07-10 | The United States Of America As Represented By The Secretary Of The Army | High temperature superconducting thin film structure and method of making |
US4962316A (en) * | 1989-07-31 | 1990-10-09 | Santa Barbara Research Center | Frequency domain integrating resonant superconducting transmission line detector |
-
1989
- 1989-09-11 US US07/405,737 patent/US5077266A/en not_active Expired - Fee Related
- 1989-09-12 DE DE68926087T patent/DE68926087T2/de not_active Expired - Fee Related
- 1989-09-12 EP EP89309231A patent/EP0364101B1/de not_active Expired - Lifetime
- 1989-09-13 JP JP01235648A patent/JP3064306B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE68926087T2 (de) | 1996-11-28 |
EP0364101A3 (en) | 1990-05-02 |
JPH02186683A (ja) | 1990-07-20 |
JP3064306B2 (ja) | 2000-07-12 |
EP0364101B1 (de) | 1996-03-27 |
US5077266A (en) | 1991-12-31 |
EP0364101A2 (de) | 1990-04-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |