DE68926072D1 - Verfahren zum Ausbilden eines Musters und Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents
Verfahren zum Ausbilden eines Musters und Verfahren zur Herstellung einer HalbleitervorrichtungInfo
- Publication number
- DE68926072D1 DE68926072D1 DE68926072T DE68926072T DE68926072D1 DE 68926072 D1 DE68926072 D1 DE 68926072D1 DE 68926072 T DE68926072 T DE 68926072T DE 68926072 T DE68926072 T DE 68926072T DE 68926072 D1 DE68926072 D1 DE 68926072D1
- Authority
- DE
- Germany
- Prior art keywords
- pattern
- manufacturing
- forming
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/145—Infrared
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/95—Multilayer mask including nonradiation sensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63170953A JP2551632B2 (ja) | 1988-07-11 | 1988-07-11 | パターン形成方法および半導体装置製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68926072D1 true DE68926072D1 (de) | 1996-05-02 |
DE68926072T2 DE68926072T2 (de) | 1996-11-21 |
Family
ID=15914440
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68926072T Expired - Fee Related DE68926072T2 (de) | 1988-07-11 | 1989-07-11 | Verfahren zum Ausbilden eines Musters und Verfahren zur Herstellung einer Halbleitervorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5441849A (de) |
EP (1) | EP0350873B1 (de) |
JP (1) | JP2551632B2 (de) |
DE (1) | DE68926072T2 (de) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05343308A (ja) * | 1992-06-09 | 1993-12-24 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5376227A (en) * | 1992-11-12 | 1994-12-27 | Goldstar Electron Co., Ltd. | Multilevel resist process |
US6476387B1 (en) * | 1998-05-15 | 2002-11-05 | Hitachi, Ltd. | Method and apparatus for observing or processing and analyzing using a charged beam |
DE19907621B4 (de) * | 1999-02-23 | 2005-12-15 | Robert Bosch Gmbh | Ätzmaskierung |
US6277691B1 (en) | 2000-04-04 | 2001-08-21 | Chartered Semiconductor Manufacturing Ltd. | Method to fabricate a robust and reliable memory device |
JP4729803B2 (ja) * | 2001-03-29 | 2011-07-20 | Jsr株式会社 | 多層レジストプロセス用下層膜形成組成物 |
US6613666B2 (en) | 2001-12-07 | 2003-09-02 | Applied Materials Inc. | Method of reducing plasma charging damage during dielectric etch process for dual damascene interconnect structures |
US7125645B2 (en) * | 2002-04-10 | 2006-10-24 | United Microelectronics Corp. | Composite photoresist for pattern transferring |
CN1316564C (zh) * | 2002-04-11 | 2007-05-16 | 联华电子股份有限公司 | 复合光致抗蚀剂层结构 |
US7607227B2 (en) * | 2006-02-08 | 2009-10-27 | Eastman Kodak Company | Method of forming a printhead |
US7897008B2 (en) * | 2006-10-27 | 2011-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for regional plasma control |
US8387674B2 (en) | 2007-11-30 | 2013-03-05 | Taiwan Semiconductor Manufacturing Comany, Ltd. | Chip on wafer bonder |
CN102803324B (zh) | 2009-06-19 | 2015-09-16 | 日产化学工业株式会社 | 咔唑酚醛清漆树脂 |
US8178280B2 (en) * | 2010-02-05 | 2012-05-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-contained proximity effect correction inspiration for advanced lithography (special) |
WO2012077640A1 (ja) | 2010-12-09 | 2012-06-14 | 日産化学工業株式会社 | 水酸基含有カルバゾールノボラック樹脂を含むレジスト下層膜形成組成物 |
JP6066092B2 (ja) | 2011-09-29 | 2017-01-25 | 日産化学工業株式会社 | ジアリールアミンノボラック樹脂 |
JP6137486B2 (ja) | 2012-02-01 | 2017-05-31 | 日産化学工業株式会社 | 複素環を含む共重合樹脂を含むレジスト下層膜形成組成物 |
KR102072490B1 (ko) | 2012-03-27 | 2020-02-03 | 닛산 가가쿠 가부시키가이샤 | 페닐인돌 함유 노볼락 수지를 포함하는 레지스트 하층막 형성 조성물 |
KR102076528B1 (ko) | 2012-08-21 | 2020-02-13 | 닛산 가가쿠 가부시키가이샤 | 다핵 페놀류를 갖는 노볼락 수지를 포함하는 레지스트 하층막 형성 조성물 |
KR102357731B1 (ko) | 2012-12-18 | 2022-02-08 | 닛산 가가쿠 가부시키가이샤 | 다환방향족 비닐화합물을 포함하는 자기조직화막의 하층막 형성조성물 |
JP6332645B2 (ja) | 2013-05-13 | 2018-05-30 | 日産化学工業株式会社 | ビスフェノールアルデヒドを用いたノボラック樹脂含有レジスト下層膜形成組成物 |
US20170097568A1 (en) | 2014-03-31 | 2017-04-06 | Nissan Chemical Industries, Ltd. | Resist underlayer film-forming composition containing novolac resin to which aromatic vinyl compound is added |
CN106662819B (zh) | 2014-08-08 | 2021-06-25 | 日产化学工业株式会社 | 包含芳香族羟甲基化合物反应而得的酚醛清漆树脂的抗蚀剂下层膜形成用组合物 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5315153A (en) * | 1976-07-27 | 1978-02-10 | Canon Inc | Hologram |
JPS5796333A (en) * | 1980-12-09 | 1982-06-15 | Fujitsu Ltd | Production of substrate for exposure of charged beam |
US4463265A (en) * | 1982-06-17 | 1984-07-31 | Hewlett-Packard Company | Electron beam proximity effect correction by reverse field pattern exposure |
JPS59116745A (ja) * | 1982-12-24 | 1984-07-05 | Fujitsu Ltd | パタ−ン形成方法 |
JPS60103342A (ja) * | 1983-11-11 | 1985-06-07 | Toshiba Corp | カラ−フイルタ用レジスト組成物 |
JPS60117241A (ja) * | 1983-11-29 | 1985-06-24 | Fujitsu Ltd | ネガ型レジスト組成物 |
JPS60185037A (ja) * | 1984-03-03 | 1985-09-20 | Matsushita Electric Works Ltd | 熱交換装置 |
JPS60258555A (ja) * | 1984-05-11 | 1985-12-20 | Fuji Xerox Co Ltd | 電子写真用感光体 |
US4702993A (en) * | 1985-11-25 | 1987-10-27 | Rca Corporation | Treatment of planarizing layer in multilayer electron beam resist |
JPS6356655A (ja) * | 1986-08-27 | 1988-03-11 | Fujitsu Ltd | パタ−ン形成方法 |
JPS63113445A (ja) * | 1986-10-30 | 1988-05-18 | Fujitsu Ltd | 二層構造レジストにおける平坦化層の形成方法 |
JPS63160225A (ja) * | 1986-12-23 | 1988-07-04 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS63160224A (ja) * | 1986-12-23 | 1988-07-04 | Fujitsu Ltd | 半導体装置の製造方法 |
JP2555657B2 (ja) * | 1987-12-24 | 1996-11-20 | 富士通株式会社 | 二層構造電子線レジスト用下層レジスト |
-
1988
- 1988-07-11 JP JP63170953A patent/JP2551632B2/ja not_active Expired - Lifetime
-
1989
- 1989-07-11 EP EP89112675A patent/EP0350873B1/de not_active Expired - Lifetime
- 1989-07-11 DE DE68926072T patent/DE68926072T2/de not_active Expired - Fee Related
-
1993
- 1993-09-08 US US08/117,969 patent/US5441849A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0350873A3 (de) | 1991-05-08 |
JP2551632B2 (ja) | 1996-11-06 |
EP0350873B1 (de) | 1996-03-27 |
JPH0222657A (ja) | 1990-01-25 |
EP0350873A2 (de) | 1990-01-17 |
DE68926072T2 (de) | 1996-11-21 |
US5441849A (en) | 1995-08-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |