DE68926143D1 - Struktur zur Aufbringung eines Metallisationsmusters darauf und Verfahren zur Bildung einer solchen Struktur - Google Patents

Struktur zur Aufbringung eines Metallisationsmusters darauf und Verfahren zur Bildung einer solchen Struktur

Info

Publication number
DE68926143D1
DE68926143D1 DE68926143T DE68926143T DE68926143D1 DE 68926143 D1 DE68926143 D1 DE 68926143D1 DE 68926143 T DE68926143 T DE 68926143T DE 68926143 T DE68926143 T DE 68926143T DE 68926143 D1 DE68926143 D1 DE 68926143D1
Authority
DE
Germany
Prior art keywords
applying
forming
metallization pattern
metallization
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68926143T
Other languages
English (en)
Other versions
DE68926143T2 (de
Inventor
James Allen Bruce
Michael Lynn Kerbaugh
Ranee Wai-Ling Kwong
Tanya Nina Lee
Harold George Linde
Harbans Singh Sachdev
Krishna Gandhi Sachdev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE68926143D1 publication Critical patent/DE68926143D1/de
Application granted granted Critical
Publication of DE68926143T2 publication Critical patent/DE68926143T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE68926143T 1988-10-17 1989-09-16 Struktur zur Aufbringung eines Metallisationsmusters darauf und Verfahren zur Bildung einer solchen Struktur Expired - Fee Related DE68926143T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/258,530 US4978594A (en) 1988-10-17 1988-10-17 Fluorine-containing base layer for multi-layer resist processes

Publications (2)

Publication Number Publication Date
DE68926143D1 true DE68926143D1 (de) 1996-05-09
DE68926143T2 DE68926143T2 (de) 1996-10-24

Family

ID=22980966

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68926143T Expired - Fee Related DE68926143T2 (de) 1988-10-17 1989-09-16 Struktur zur Aufbringung eines Metallisationsmusters darauf und Verfahren zur Bildung einer solchen Struktur

Country Status (4)

Country Link
US (1) US4978594A (de)
EP (1) EP0364740B1 (de)
JP (1) JPH0642471B2 (de)
DE (1) DE68926143T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8822145D0 (en) * 1988-09-21 1988-10-26 Ciba Geigy Ag Method
JP2859288B2 (ja) * 1989-03-20 1999-02-17 株式会社日立製作所 半導体集積回路装置及びその製造方法
US5137751A (en) * 1990-03-09 1992-08-11 Amoco Corporation Process for making thick multilayers of polyimide
US5202411A (en) * 1990-04-06 1993-04-13 W. R. Grace & Co.-Conn. Tri-component polyimide composition and preparation thereof
JP2811124B2 (ja) * 1991-03-15 1998-10-15 三菱電機株式会社 パターン形成方法およびフォトマスクの製造方法
KR970002427B1 (en) * 1994-01-14 1997-03-05 Lg Semicon Co Ltd Fine patterning method of photoresist film
US5460693A (en) * 1994-05-31 1995-10-24 Texas Instruments Incorporated Dry microlithography process
KR100524811B1 (ko) * 1996-06-27 2006-01-27 주식회사 하이닉스반도체 반도체장치의미세패턴형성방법
US6165856A (en) 1998-08-12 2000-12-26 Micron Technology, Inc. Using an organic layer as an ion implantation mask when forming shallow source/drain region
US6350706B1 (en) * 1998-09-03 2002-02-26 Micron Technology, Inc. Process for using photo-definable layers in the manufacture of semiconductor devices and resulting structures of same
US6379869B1 (en) * 1999-03-31 2002-04-30 Infineon Technologies Ag Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterning
EP1112590A1 (de) * 1999-07-01 2001-07-04 Lam Research Corporation Verfahren zum strukturieren einer schicht mit niedriger dielektrizitätskonstante
US6465156B1 (en) 1999-10-21 2002-10-15 Advanced Micro Devices, Inc. Method for mitigating formation of silicon grass
US6444408B1 (en) * 2000-02-28 2002-09-03 International Business Machines Corporation High silicon content monomers and polymers suitable for 193 nm bilayer resists
US6605519B2 (en) 2001-05-02 2003-08-12 Unaxis Usa, Inc. Method for thin film lift-off processes using lateral extended etching masks and device
US7125645B2 (en) * 2002-04-10 2006-10-24 United Microelectronics Corp. Composite photoresist for pattern transferring
US7555828B2 (en) * 2002-12-02 2009-07-07 Hitachi Global Storage Technologies Netherlands B.V. Method for manufacturing a read sensor for a magnetoresistive head
US20040197710A1 (en) * 2003-04-01 2004-10-07 Ching-Yu Chang Method for defining ring pattern
US20060231930A1 (en) * 2005-04-19 2006-10-19 Hitachi Global Storage Technologies Netherlands B.V. Heat resistant photomask for high temperature fabrication processes
JP2010109148A (ja) * 2008-10-30 2010-05-13 Toshiba Corp レジストパターンの形成方法
JP5663160B2 (ja) * 2009-09-28 2015-02-04 東京応化工業株式会社 表面処理剤及び表面処理方法
WO2011050048A2 (en) * 2009-10-20 2011-04-28 Cornell Research Foundation, Inc. Methods of making patterned structures of fluorine-containing polymeric materials and fluorine-containing polymers
JP5528244B2 (ja) * 2010-07-26 2014-06-25 東京エレクトロン株式会社 プラズマ処理方法および記憶媒体

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4243476A (en) * 1979-06-29 1981-01-06 International Business Machines Corporation Modification of etch rates by solid masking materials
US4337132A (en) * 1980-11-14 1982-06-29 Rockwell International Corporation Ion etching process with minimized redeposition
US4357203A (en) * 1981-12-30 1982-11-02 Rca Corporation Plasma etching of polyimide
US4599243A (en) * 1982-12-23 1986-07-08 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
JPS59142839A (ja) * 1983-02-01 1984-08-16 Canon Inc 気相法装置のクリ−ニング方法
US4501061A (en) * 1983-05-31 1985-02-26 Advanced Micro Devices, Inc. Fluorine plasma oxidation of residual sulfur species
US4456501A (en) * 1983-12-22 1984-06-26 Advanced Micro Devices, Inc. Process for dislocation-free slot isolations in device fabrication
GB8403698D0 (en) * 1984-02-13 1984-03-14 British Telecomm Semiconductor device fabrication
US4552833A (en) * 1984-05-14 1985-11-12 International Business Machines Corporation Radiation sensitive and oxygen plasma developable resist
US4547261A (en) * 1984-09-28 1985-10-15 Rca Corporation Anisotropic etching of aluminum
CA1282273C (en) * 1985-03-19 1991-04-02 International Business Machines Corporation Method of creating patterned multilayer films for use in production of semiconductor circuits and systems
US4613400A (en) * 1985-05-20 1986-09-23 Applied Materials, Inc. In-situ photoresist capping process for plasma etching
CA1286424C (en) * 1987-01-12 1991-07-16 William C. Mccolgin Bilayer lithographic process

Also Published As

Publication number Publication date
JPH0642471B2 (ja) 1994-06-01
EP0364740A3 (de) 1991-05-02
US4978594A (en) 1990-12-18
JPH02151030A (ja) 1990-06-11
EP0364740A2 (de) 1990-04-25
EP0364740B1 (de) 1996-04-03
DE68926143T2 (de) 1996-10-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee