DE68925308T2 - Integrierte Grabentransistorstruktur und Herstellungsverfahren - Google Patents
Integrierte Grabentransistorstruktur und HerstellungsverfahrenInfo
- Publication number
- DE68925308T2 DE68925308T2 DE68925308T DE68925308T DE68925308T2 DE 68925308 T2 DE68925308 T2 DE 68925308T2 DE 68925308 T DE68925308 T DE 68925308T DE 68925308 T DE68925308 T DE 68925308T DE 68925308 T2 DE68925308 T2 DE 68925308T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- transistor structure
- trench transistor
- integrated trench
- integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823885—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0925—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising an N-well only in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/206,148 US4881105A (en) | 1988-06-13 | 1988-06-13 | Integrated trench-transistor structure and fabrication process |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68925308D1 DE68925308D1 (de) | 1996-02-15 |
DE68925308T2 true DE68925308T2 (de) | 1996-06-13 |
Family
ID=22765182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68925308T Expired - Fee Related DE68925308T2 (de) | 1988-06-13 | 1989-05-17 | Integrierte Grabentransistorstruktur und Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (1) | US4881105A (de) |
EP (1) | EP0346632B1 (de) |
JP (1) | JPH0226063A (de) |
DE (1) | DE68925308T2 (de) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01194437A (ja) * | 1988-01-29 | 1989-08-04 | Mitsubishi Electric Corp | 半導体装置 |
JPH07109873B2 (ja) * | 1988-07-05 | 1995-11-22 | 株式会社東芝 | 半導体記憶装置 |
JPH02206175A (ja) * | 1989-02-06 | 1990-08-15 | Fuji Electric Co Ltd | Mos型半導体装置 |
US5021355A (en) * | 1989-05-22 | 1991-06-04 | International Business Machines Corporation | Method of fabricating cross-point lightly-doped drain-source trench transistor |
US5055903A (en) * | 1989-06-22 | 1991-10-08 | Siemens Aktiengesellschaft | Circuit for reducing the latch-up sensitivity of a cmos circuit |
JPH0513714A (ja) * | 1990-01-25 | 1993-01-22 | Texas Instr Inc <Ti> | 溝型トランジスタ使用の双安定論理デバイス |
US5206187A (en) * | 1991-08-30 | 1993-04-27 | Micron Technology, Inc. | Method of processing semiconductor wafers using a contact etch stop |
EP0617468A1 (de) * | 1993-03-22 | 1994-09-28 | Siemens Aktiengesellschaft | Kurzkanal-MOS-Transistor und Verfahren zu dessen Herstellung |
US5324973A (en) * | 1993-05-03 | 1994-06-28 | Motorola Inc. | Semiconductor SRAM with trench transistors |
US5389559A (en) * | 1993-12-02 | 1995-02-14 | International Business Machines Corporation | Method of forming integrated interconnect for very high density DRAMs |
US5698468A (en) * | 1995-06-07 | 1997-12-16 | Lsi Logic Corporation | Silicidation process with etch stop |
JP3371708B2 (ja) * | 1996-08-22 | 2003-01-27 | ソニー株式会社 | 縦型電界効果トランジスタの製造方法 |
US6429481B1 (en) * | 1997-11-14 | 2002-08-06 | Fairchild Semiconductor Corporation | Field effect transistor and method of its manufacture |
FR2789227B1 (fr) * | 1999-02-03 | 2003-08-15 | France Telecom | DISPOSITIF SEMI-CONDUCTEUR DE PORTES LOGIQUES NON-ET OU NON-OU A n ENTREES, ET PROCEDE DE FABRICATION CORRESPONDANT |
US6891213B1 (en) | 1999-03-16 | 2005-05-10 | Micron Technology, Inc. | Base current reversal SRAM memory cell and method |
US6313490B1 (en) | 1999-03-16 | 2001-11-06 | Micron Technology, Inc. | Base current reversal SRAM memory cell and method |
US6190971B1 (en) | 1999-05-13 | 2001-02-20 | International Business Machines Corporation | Formation of 5F2 cell with partially vertical transistor and gate conductor aligned buried strap with raised shallow trench isolation region |
US6274905B1 (en) | 1999-06-30 | 2001-08-14 | Fairchild Semiconductor Corporation | Trench structure substantially filled with high-conductivity material |
US6437381B1 (en) | 2000-04-27 | 2002-08-20 | International Business Machines Corporation | Semiconductor memory device with reduced orientation-dependent oxidation in trench structures |
US6653708B2 (en) | 2000-08-08 | 2003-11-25 | Intersil Americas Inc. | Complementary metal oxide semiconductor with improved single event performance |
JP4759821B2 (ja) * | 2001-03-08 | 2011-08-31 | ソニー株式会社 | 半導体装置の製造方法 |
KR100525331B1 (ko) * | 2001-04-26 | 2005-11-02 | 가부시끼가이샤 도시바 | 반도체 장치 |
US6599813B2 (en) | 2001-06-29 | 2003-07-29 | International Business Machines Corporation | Method of forming shallow trench isolation for thin silicon-on-insulator substrates |
US6746933B1 (en) | 2001-10-26 | 2004-06-08 | International Business Machines Corporation | Pitcher-shaped active area for field effect transistor and method of forming same |
US6635535B2 (en) * | 2001-11-20 | 2003-10-21 | Fairchild Semiconductor Corporation | Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing |
US7078296B2 (en) | 2002-01-16 | 2006-07-18 | Fairchild Semiconductor Corporation | Self-aligned trench MOSFETs and methods for making the same |
US6838722B2 (en) | 2002-03-22 | 2005-01-04 | Siliconix Incorporated | Structures of and methods of fabricating trench-gated MIS devices |
US7045844B2 (en) * | 2002-06-21 | 2006-05-16 | Micron Technology, Inc. | Memory cell and method for forming the same |
US6756625B2 (en) * | 2002-06-21 | 2004-06-29 | Micron Technology, Inc. | Memory cell and method for forming the same |
JP2004055803A (ja) * | 2002-07-19 | 2004-02-19 | Renesas Technology Corp | 半導体装置 |
JP2004068792A (ja) | 2002-08-09 | 2004-03-04 | Kokusan Denki Co Ltd | 内燃機関用燃料噴射・点火装置 |
US6828211B2 (en) * | 2002-10-01 | 2004-12-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Shallow trench filled with two or more dielectrics for isolation and coupling or for stress control |
US7037794B2 (en) * | 2004-06-09 | 2006-05-02 | International Business Machines Corporation | Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain |
US7241655B2 (en) * | 2004-08-30 | 2007-07-10 | Micron Technology, Inc. | Method of fabricating a vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array |
US6956266B1 (en) * | 2004-09-09 | 2005-10-18 | International Business Machines Corporation | Structure and method for latchup suppression utilizing trench and masked sub-collector implantation |
US7095094B2 (en) * | 2004-09-29 | 2006-08-22 | Agere Systems Inc. | Multiple doping level bipolar junctions transistors and method for forming |
US8350318B2 (en) * | 2006-03-06 | 2013-01-08 | Semiconductor Components Industries, Llc | Method of forming an MOS transistor and structure therefor |
US7883965B2 (en) * | 2006-07-31 | 2011-02-08 | Hynix Semiconductor Inc. | Semiconductor device and method for fabricating the same |
US7902057B2 (en) * | 2007-07-31 | 2011-03-08 | Micron Technology, Inc. | Methods of fabricating dual fin structures |
US20100013009A1 (en) * | 2007-12-14 | 2010-01-21 | James Pan | Structure and Method for Forming Trench Gate Transistors with Low Gate Resistance |
JP2009224543A (ja) * | 2008-03-17 | 2009-10-01 | Sony Corp | 半導体装置の製造方法 |
US7732891B2 (en) * | 2008-06-03 | 2010-06-08 | Kabushiki Kaisha Toshiba | Semiconductor device |
US8304829B2 (en) | 2008-12-08 | 2012-11-06 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
US8174067B2 (en) | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
US8227855B2 (en) | 2009-02-09 | 2012-07-24 | Fairchild Semiconductor Corporation | Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same |
US8148749B2 (en) | 2009-02-19 | 2012-04-03 | Fairchild Semiconductor Corporation | Trench-shielded semiconductor device |
US8049276B2 (en) | 2009-06-12 | 2011-11-01 | Fairchild Semiconductor Corporation | Reduced process sensitivity of electrode-semiconductor rectifiers |
US8232624B2 (en) * | 2009-09-14 | 2012-07-31 | International Business Machines Corporation | Semiconductor structure having varactor with parallel DC path adjacent thereto |
US9425305B2 (en) | 2009-10-20 | 2016-08-23 | Vishay-Siliconix | Structures of and methods of fabricating split gate MIS devices |
TW201140804A (en) * | 2010-01-15 | 2011-11-16 | Intersil Inc | Monolithic output stage with vertical high-side PMOS and vertical low-side NMOS interconnected using buried metal, structure and method |
WO2011109559A2 (en) | 2010-03-02 | 2011-09-09 | Kyle Terrill | Structures and methods of fabricating dual gate devices |
KR101619580B1 (ko) | 2011-05-18 | 2016-05-10 | 비쉐이-실리코닉스 | 반도체 장치 |
WO2015155862A1 (ja) | 2014-04-10 | 2015-10-15 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置 |
JP6080933B2 (ja) * | 2015-10-28 | 2017-02-15 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 半導体装置 |
US11217541B2 (en) | 2019-05-08 | 2022-01-04 | Vishay-Siliconix, LLC | Transistors with electrically active chip seal ring and methods of manufacture |
TWI707438B (zh) * | 2019-07-19 | 2020-10-11 | 力晶積成電子製造股份有限公司 | 電路架構 |
US11218144B2 (en) | 2019-09-12 | 2022-01-04 | Vishay-Siliconix, LLC | Semiconductor device with multiple independent gates |
CN113892176A (zh) * | 2021-08-31 | 2022-01-04 | 长江存储科技有限责任公司 | 半导体结构、制作方法及三维存储器 |
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JPS5066184A (de) * | 1973-10-12 | 1975-06-04 | ||
JPS52140935A (en) * | 1976-05-20 | 1977-11-24 | Agency Of Ind Science & Technol | Solar heat collector |
US4131907A (en) * | 1977-09-28 | 1978-12-26 | Ouyang Paul H | Short-channel V-groove complementary MOS device |
US4191898A (en) * | 1978-05-01 | 1980-03-04 | Motorola, Inc. | High voltage CMOS circuit |
JPS5537250U (de) * | 1978-08-31 | 1980-03-10 | ||
JPS5681974A (en) * | 1979-12-07 | 1981-07-04 | Toshiba Corp | Manufacture of mos type semiconductor device |
US4319932A (en) * | 1980-03-24 | 1982-03-16 | International Business Machines Corporation | Method of making high performance bipolar transistor with polysilicon base contacts |
JPS583287A (ja) * | 1981-06-30 | 1983-01-10 | Fujitsu Ltd | 縦型シリンドリカルmos電界効果トランジスタ |
US4454647A (en) * | 1981-08-27 | 1984-06-19 | International Business Machines Corporation | Isolation for high density integrated circuits |
JPS58171832A (ja) * | 1982-03-31 | 1983-10-08 | Toshiba Corp | 半導体装置の製造方法 |
US4541001A (en) * | 1982-09-23 | 1985-09-10 | Eaton Corporation | Bidirectional power FET with substrate-referenced shield |
US4517731A (en) * | 1983-09-29 | 1985-05-21 | Fairchild Camera & Instrument Corporation | Double polysilicon process for fabricating CMOS integrated circuits |
US4509991A (en) * | 1983-10-06 | 1985-04-09 | International Business Machines Corporation | Single mask process for fabricating CMOS structure |
US4546535A (en) * | 1983-12-12 | 1985-10-15 | International Business Machines Corporation | Method of making submicron FET structure |
JPS60128654A (ja) * | 1983-12-16 | 1985-07-09 | Hitachi Ltd | 半導体集積回路 |
FR2566179B1 (fr) * | 1984-06-14 | 1986-08-22 | Commissariat Energie Atomique | Procede d'autopositionnement d'un oxyde de champ localise par rapport a une tranchee d'isolement |
US4578128A (en) * | 1984-12-03 | 1986-03-25 | Ncr Corporation | Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants |
US4767722A (en) * | 1986-03-24 | 1988-08-30 | Siliconix Incorporated | Method for making planar vertical channel DMOS structures |
JPS635554A (ja) * | 1986-06-25 | 1988-01-11 | Matsushita Electric Works Ltd | 相補形mos半導体装置 |
-
1988
- 1988-06-13 US US07/206,148 patent/US4881105A/en not_active Expired - Fee Related
-
1989
- 1989-04-14 JP JP1093258A patent/JPH0226063A/ja active Pending
- 1989-05-17 DE DE68925308T patent/DE68925308T2/de not_active Expired - Fee Related
- 1989-05-17 EP EP89108839A patent/EP0346632B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0346632B1 (de) | 1996-01-03 |
JPH0226063A (ja) | 1990-01-29 |
EP0346632A2 (de) | 1989-12-20 |
DE68925308D1 (de) | 1996-02-15 |
EP0346632A3 (de) | 1991-06-05 |
US4881105A (en) | 1989-11-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |