DE68924048T2 - Belichtungsmaske für ein Halbleiterplättchen und Belichtungsverfahren. - Google Patents
Belichtungsmaske für ein Halbleiterplättchen und Belichtungsverfahren.Info
- Publication number
- DE68924048T2 DE68924048T2 DE68924048T DE68924048T DE68924048T2 DE 68924048 T2 DE68924048 T2 DE 68924048T2 DE 68924048 T DE68924048 T DE 68924048T DE 68924048 T DE68924048 T DE 68924048T DE 68924048 T2 DE68924048 T2 DE 68924048T2
- Authority
- DE
- Germany
- Prior art keywords
- exposure
- semiconductor wafer
- mask
- exposure method
- exposure mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63323293A JPH02170410A (ja) | 1988-12-23 | 1988-12-23 | 放射線露光用マスクおよびこれを用いた放射線露光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68924048D1 DE68924048D1 (de) | 1995-10-05 |
DE68924048T2 true DE68924048T2 (de) | 1996-04-18 |
Family
ID=18153170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68924048T Expired - Fee Related DE68924048T2 (de) | 1988-12-23 | 1989-12-12 | Belichtungsmaske für ein Halbleiterplättchen und Belichtungsverfahren. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5115456A (de) |
EP (1) | EP0374701B1 (de) |
JP (1) | JPH02170410A (de) |
DE (1) | DE68924048T2 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5235626A (en) * | 1991-10-22 | 1993-08-10 | International Business Machines Corporation | Segmented mask and exposure system for x-ray lithography |
SG43954A1 (en) * | 1991-11-15 | 1997-11-14 | Canon Kk | X-ray mask structure and x-ray exposing method and semiconductor device manufactured by use of x-ray mask structure and method for manufacturing x-ray mask structure |
US5263073A (en) * | 1991-12-20 | 1993-11-16 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Scanning systems for high resolution E-beam and X-ray lithography |
JPH07159974A (ja) * | 1993-12-09 | 1995-06-23 | Ryoden Semiconductor Syst Eng Kk | パターン転写マスクおよびその製造方法 |
US5491643A (en) * | 1994-02-04 | 1996-02-13 | Stratasys, Inc. | Method for optimizing parameters characteristic of an object developed in a rapid prototyping system |
JP3287725B2 (ja) * | 1994-06-07 | 2002-06-04 | キヤノン株式会社 | 露光方法とこれを用いたデバイス製造方法 |
US5548625A (en) * | 1995-03-02 | 1996-08-20 | Motorola, Inc. | Method for parallel multiple field processing in X-ray lithography |
JPH10106943A (ja) * | 1996-06-04 | 1998-04-24 | Nikon Corp | マスク用基板の製造方法 |
US5781607A (en) * | 1996-10-16 | 1998-07-14 | Ibm Corporation | Membrane mask structure, fabrication and use |
JPH10135103A (ja) * | 1996-10-25 | 1998-05-22 | Nikon Corp | 荷電粒子線転写用マスクまたはx線転写用マスクの製造方法 |
US6180289B1 (en) | 1997-07-23 | 2001-01-30 | Nikon Corporation | Projection-microlithography mask with separate mask substrates |
US6009143A (en) * | 1997-08-08 | 1999-12-28 | International Business Machines Corporation | Mirror for providing selective exposure in X-ray lithography |
JPH11142121A (ja) | 1997-11-11 | 1999-05-28 | Nikon Corp | レチクルの歪み計測方法および歪み計測装置 |
US6713842B1 (en) * | 1999-08-18 | 2004-03-30 | Advanced Micro Devices, Inc. | Mask for and method of forming a character on a substrate |
JP2002110537A (ja) | 2000-07-19 | 2002-04-12 | Nikon Corp | マスク描画用電子線露光装置 |
US6949638B2 (en) * | 2001-01-29 | 2005-09-27 | Affymetrix, Inc. | Photolithographic method and system for efficient mask usage in manufacturing DNA arrays |
JP3674573B2 (ja) * | 2001-06-08 | 2005-07-20 | ソニー株式会社 | マスクおよびその製造方法と半導体装置の製造方法 |
US7045904B2 (en) * | 2003-12-10 | 2006-05-16 | Texas Instruments Incorporated | Patterned plasma treatment to improve distribution of underfill material |
JP5090780B2 (ja) * | 2007-04-26 | 2012-12-05 | 株式会社オーク製作所 | 露光描画装置 |
JP2010271589A (ja) * | 2009-05-22 | 2010-12-02 | Renesas Electronics Corp | パターン分割方法、パターン分割処理装置及びコンピュータプログラム |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3742230A (en) * | 1972-06-29 | 1973-06-26 | Massachusetts Inst Technology | Soft x-ray mask support substrate |
US3873824A (en) * | 1973-10-01 | 1975-03-25 | Texas Instruments Inc | X-ray lithography mask |
US3974382A (en) * | 1975-01-06 | 1976-08-10 | Massachusetts Institute Of Technology | Lithographic mask attraction system |
US4301237A (en) * | 1979-07-12 | 1981-11-17 | Western Electric Co., Inc. | Method for exposing substrates to X-rays |
US4260670A (en) * | 1979-07-12 | 1981-04-07 | Western Electric Company, Inc. | X-ray mask |
JPS57211732A (en) * | 1981-06-24 | 1982-12-25 | Toshiba Corp | X ray exposing mask and manufacture thereof |
JPS6318353A (ja) * | 1986-07-10 | 1988-01-26 | Toppan Printing Co Ltd | 電子写真感光体 |
JPS6318351A (ja) * | 1986-07-11 | 1988-01-26 | Hitachi Micro Comput Eng Ltd | パタ−ン形成用マスク |
JPS6318352A (ja) * | 1986-07-11 | 1988-01-26 | Agency Of Ind Science & Technol | 分割露光用マスク |
JPH0746681B2 (ja) * | 1986-10-28 | 1995-05-17 | 富士通株式会社 | X線ステッパー用マスクの製造方法 |
DE68924122T2 (de) * | 1988-10-20 | 1996-05-09 | Fujitsu Ltd | Herstellungsverfahren für Halbleitervorrichtungen und durchsichtige Maske für den geladenen Teilchenstrahl. |
-
1988
- 1988-12-23 JP JP63323293A patent/JPH02170410A/ja active Pending
-
1989
- 1989-12-08 US US07/447,865 patent/US5115456A/en not_active Expired - Fee Related
- 1989-12-12 DE DE68924048T patent/DE68924048T2/de not_active Expired - Fee Related
- 1989-12-12 EP EP89122948A patent/EP0374701B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5115456A (en) | 1992-05-19 |
JPH02170410A (ja) | 1990-07-02 |
DE68924048D1 (de) | 1995-10-05 |
EP0374701A2 (de) | 1990-06-27 |
EP0374701A3 (de) | 1991-05-08 |
EP0374701B1 (de) | 1995-08-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |