DE68916182T2 - Halbleitereinrichtung, z.B. Feldeffekttransistor, und Verfahren zur Herstellung derselben. - Google Patents
Halbleitereinrichtung, z.B. Feldeffekttransistor, und Verfahren zur Herstellung derselben.Info
- Publication number
- DE68916182T2 DE68916182T2 DE68916182T DE68916182T DE68916182T2 DE 68916182 T2 DE68916182 T2 DE 68916182T2 DE 68916182 T DE68916182 T DE 68916182T DE 68916182 T DE68916182 T DE 68916182T DE 68916182 T2 DE68916182 T2 DE 68916182T2
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor device
- same
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63205535A JPH0254537A (ja) | 1988-08-18 | 1988-08-18 | 半導体装置及び半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68916182D1 DE68916182D1 (de) | 1994-07-21 |
DE68916182T2 true DE68916182T2 (de) | 1994-09-22 |
Family
ID=16508499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68916182T Expired - Lifetime DE68916182T2 (de) | 1988-08-18 | 1989-08-10 | Halbleitereinrichtung, z.B. Feldeffekttransistor, und Verfahren zur Herstellung derselben. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5060033A (de) |
EP (1) | EP0368444B1 (de) |
JP (1) | JPH0254537A (de) |
KR (1) | KR0149659B1 (de) |
DE (1) | DE68916182T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0774355A (ja) * | 1993-08-31 | 1995-03-17 | Nec Corp | 半導体装置及びその製造方法 |
US5463237A (en) * | 1993-11-04 | 1995-10-31 | Victor Company Of Japan, Ltd. | MOSFET device having depletion layer |
US5538907A (en) * | 1994-05-11 | 1996-07-23 | Lsi Logic Corporation | Method for forming a CMOS integrated circuit with electrostatic discharge protection |
US5773863A (en) * | 1994-08-18 | 1998-06-30 | Sun Microsystems, Inc. | Low power, high performance junction transistor |
US5622880A (en) * | 1994-08-18 | 1997-04-22 | Sun Microsystems, Inc. | Method of making a low power, high performance junction transistor |
US5516711A (en) * | 1994-12-16 | 1996-05-14 | Mosel Vitelic, Inc. | Method for forming LDD CMOS with oblique implantation |
JPH0955496A (ja) * | 1995-08-17 | 1997-02-25 | Oki Electric Ind Co Ltd | 高耐圧mosトランジスタ及びその製造方法 |
US5827747A (en) * | 1996-03-28 | 1998-10-27 | Mosel Vitelic, Inc. | Method for forming LDD CMOS using double spacers and large-tilt-angle ion implantation |
US5686324A (en) * | 1996-03-28 | 1997-11-11 | Mosel Vitelic, Inc. | Process for forming LDD CMOS using large-tilt-angle ion implantation |
TW326110B (en) * | 1996-12-24 | 1998-02-01 | Nat Science Council | Manufacturing method for inversed T-type well component |
US7391087B2 (en) * | 1999-12-30 | 2008-06-24 | Intel Corporation | MOS transistor structure and method of fabrication |
KR20030013181A (ko) | 2001-08-07 | 2003-02-14 | 삼성전자주식회사 | 취반기능을 갖는 전자렌지 및 그 제어방법 |
TW548850B (en) * | 2002-05-29 | 2003-08-21 | Toppoly Optoelectronics Corp | Low-temperature polysilicon TFT of LDD structure and process for producing same |
US20040121524A1 (en) * | 2002-12-20 | 2004-06-24 | Micron Technology, Inc. | Apparatus and method for controlling diffusion |
US7297617B2 (en) * | 2003-04-22 | 2007-11-20 | Micron Technology, Inc. | Method for controlling diffusion in semiconductor regions |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3921283A (en) * | 1971-06-08 | 1975-11-25 | Philips Corp | Semiconductor device and method of manufacturing the device |
US4016594A (en) * | 1971-06-08 | 1977-04-05 | U.S. Philips Corporation | Semiconductor device and method of manufacturing the device |
JPS53127273A (en) * | 1977-04-13 | 1978-11-07 | Fujitsu Ltd | Mis transistor and its manufacture |
JPS5836510B2 (ja) * | 1977-07-07 | 1983-08-09 | 株式会社東芝 | 光導電タ−ゲット |
US4261761A (en) * | 1979-09-04 | 1981-04-14 | Tektronix, Inc. | Method of manufacturing sub-micron channel width MOS transistor |
JPS5687368A (en) * | 1979-12-19 | 1981-07-15 | Nec Corp | Semiconductor device |
JPS5950562A (ja) * | 1982-09-17 | 1984-03-23 | Toshiba Corp | 半導体装置 |
US4579824A (en) * | 1983-05-18 | 1986-04-01 | Louderback Allan Lee | Hematology control |
JPS60180167A (ja) * | 1984-02-27 | 1985-09-13 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS60235471A (ja) * | 1984-05-08 | 1985-11-22 | Matsushita Electric Ind Co Ltd | Mis電界効果トランジスタ及びその製造方法 |
IT1214615B (it) * | 1985-06-19 | 1990-01-18 | Ates Componenti Elettron | Transistore mos a canale n con limitazione dell'effetto di perforazione (punch-through) erelativo processo di formazione. |
JPS6235666A (ja) * | 1985-08-09 | 1987-02-16 | Nissan Motor Co Ltd | Mosトランジスタ |
US4939558A (en) * | 1985-09-27 | 1990-07-03 | Texas Instruments Incorporated | EEPROM memory cell and driving circuitry |
JPS62217666A (ja) * | 1986-03-18 | 1987-09-25 | Nippon Denso Co Ltd | Misトランジスタ |
GB2190539A (en) * | 1986-05-16 | 1987-11-18 | Philips Electronic Associated | Semiconductor devices |
JPS63263767A (ja) * | 1987-04-22 | 1988-10-31 | Hitachi Ltd | 半導体装置 |
US4928156A (en) * | 1987-07-13 | 1990-05-22 | Motorola, Inc. | N-channel MOS transistors having source/drain regions with germanium |
JPH01120067A (ja) * | 1987-11-02 | 1989-05-12 | Hitachi Ltd | 半導体装置及びその製造方法 |
-
1988
- 1988-08-18 JP JP63205535A patent/JPH0254537A/ja active Pending
-
1989
- 1989-08-10 DE DE68916182T patent/DE68916182T2/de not_active Expired - Lifetime
- 1989-08-10 EP EP89308120A patent/EP0368444B1/de not_active Expired - Lifetime
- 1989-08-14 KR KR1019890011570A patent/KR0149659B1/ko not_active IP Right Cessation
- 1989-08-17 US US07/395,735 patent/US5060033A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0254537A (ja) | 1990-02-23 |
EP0368444B1 (de) | 1994-06-15 |
KR0149659B1 (ko) | 1998-10-01 |
DE68916182D1 (de) | 1994-07-21 |
EP0368444A1 (de) | 1990-05-16 |
KR900003967A (ko) | 1990-03-27 |
US5060033A (en) | 1991-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |