DE60335179D1 - Leitfähiges glas für photoelektrische umsetzungseinrichtung - Google Patents

Leitfähiges glas für photoelektrische umsetzungseinrichtung

Info

Publication number
DE60335179D1
DE60335179D1 DE60335179T DE60335179T DE60335179D1 DE 60335179 D1 DE60335179 D1 DE 60335179D1 DE 60335179 T DE60335179 T DE 60335179T DE 60335179 T DE60335179 T DE 60335179T DE 60335179 D1 DE60335179 D1 DE 60335179D1
Authority
DE
Germany
Prior art keywords
electrically conductive
grid
conductive film
transparent electrically
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60335179T
Other languages
English (en)
Inventor
Kenichi Okada
Hiroshi Matsui
Nobuo Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Original Assignee
Fujikura Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd filed Critical Fujikura Ltd
Application granted granted Critical
Publication of DE60335179D1 publication Critical patent/DE60335179D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
    • H01M14/005—Photoelectrochemical storage cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Hybrid Cells (AREA)
  • Photovoltaic Devices (AREA)
  • Non-Insulated Conductors (AREA)
  • Glass Compositions (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
  • Medicinal Preparation (AREA)
  • Surface Treatment Of Glass (AREA)
DE60335179T 2002-03-26 2003-03-25 Leitfähiges glas für photoelektrische umsetzungseinrichtung Expired - Lifetime DE60335179D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002086859 2002-03-26
JP2002333598 2002-11-18
PCT/JP2003/003626 WO2003081609A1 (en) 2002-03-26 2003-03-25 Conductive glass and photoelectric conversion device using same

Publications (1)

Publication Number Publication Date
DE60335179D1 true DE60335179D1 (de) 2011-01-13

Family

ID=28456269

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60335179T Expired - Lifetime DE60335179D1 (de) 2002-03-26 2003-03-25 Leitfähiges glas für photoelektrische umsetzungseinrichtung

Country Status (10)

Country Link
US (1) US8546683B2 (de)
EP (1) EP1489628B1 (de)
JP (1) JP4071719B2 (de)
KR (1) KR100612458B1 (de)
CN (1) CN1326158C (de)
AT (1) ATE490542T1 (de)
AU (1) AU2003236063B2 (de)
DE (1) DE60335179D1 (de)
TW (1) TWI234885B (de)
WO (1) WO2003081609A1 (de)

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CN1300894C (zh) * 2002-07-09 2007-02-14 株式会社藤仓 太阳电池
US7825330B2 (en) * 2002-07-09 2010-11-02 Fujikura Ltd. Solar cell
WO2008139479A2 (en) * 2007-05-15 2008-11-20 3Gsolar Ltd. Photovoltaic cell
IL153895A (en) * 2003-01-12 2013-01-31 Orion Solar Systems Ltd Solar cell device
JP4578786B2 (ja) * 2003-07-23 2010-11-10 株式会社フジクラ 色素増感太陽電池の製造方法
JP4797324B2 (ja) * 2004-01-09 2011-10-19 株式会社ブリヂストン 色素増感型太陽電池用電極
JP4892197B2 (ja) * 2005-04-01 2012-03-07 関西パイプ工業株式会社 色素増感型太陽電池用電極基板、色素増感型太陽電池用光電極および対向電極、ならびに色素増感型太陽電池
JP2006294423A (ja) * 2005-04-11 2006-10-26 Ngk Spark Plug Co Ltd 色素増感型太陽電池
JP4966525B2 (ja) * 2005-08-10 2012-07-04 株式会社エンプラス 色素増感型太陽電池、その光電極基板およびその光電極基板の製造方法
FR2895206B1 (fr) * 2005-12-16 2008-03-21 Framatome Anp Sas Canne chauffante pour pressuriseur de circuit primaire d'un reacteur nucleaire a eau sous pression.
WO2008001488A1 (en) * 2006-06-29 2008-01-03 National University Corporation Kyushu Institute Of Technology Dye-sensitized solar cell and process for manufacturing the same
KR100811007B1 (ko) * 2006-08-25 2008-03-11 주식회사 신안에스엔피 Ｉｔｏ 투명 전도성 박막을 이용한 솔라셀의 제조방법 및상기 방법으로 제작된 솔라셀이 내장된 액정표시장치
EP2092573A2 (de) * 2006-11-01 2009-08-26 Bar-Ilan University Nickel-cobalt-legierungen als stromkollektoren und leitfähige verbindungselemente und ihre abscheidung auf transparenten leitfähigen oxiden
WO2008152889A1 (ja) * 2007-06-11 2008-12-18 Konica Minolta Holdings, Inc. 光電変換素子、光電変換素子の製造方法、イメージセンサおよび放射線画像検出器
JP5096064B2 (ja) * 2007-08-01 2012-12-12 シャープ株式会社 色素増感型太陽電池モジュール
JP5252929B2 (ja) * 2008-01-16 2013-07-31 ラピスセミコンダクタ株式会社 色素増感太陽電池及びその製造方法
US7833808B2 (en) * 2008-03-24 2010-11-16 Palo Alto Research Center Incorporated Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
JP5273709B2 (ja) * 2008-07-02 2013-08-28 シャープ株式会社 色素増感太陽電池、その製造方法および色素増感太陽電池モジュール
US8742531B2 (en) * 2008-12-08 2014-06-03 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Electrical devices including dendritic metal electrodes
KR20110129959A (ko) * 2009-03-17 2011-12-02 코나르카 테크놀로지, 인코포레이티드 염료 감응형 전지용 금속 기판
EP2259329A1 (de) * 2009-05-26 2010-12-08 Institut de Ciències Fotòniques, Fundació Privada Transparente Metallleiter mit geringem Schichtwiderstand
US9139465B2 (en) 2009-08-04 2015-09-22 Lehigh University Conductive doped metal-glass compositions and methods
EP2309547B1 (de) * 2009-10-06 2012-12-12 Samsung SDI Co., Ltd. Photoelektrische Umwandlungsvorrichtung
EP2312641A1 (de) * 2009-10-13 2011-04-20 Ecole Polytechnique Fédérale de Lausanne (EPFL) Vorrichtung mit elektrischen Kontakten und deren Herstellungsverfahren
US20110168253A1 (en) * 2009-12-25 2011-07-14 Samsung Sdi Co., Ltd. Electrode substrate and photoelectric transformation device
ES2364309B1 (es) * 2010-02-19 2012-08-13 Institut De Ciencies Fotoniques, Fundacio Privada Electrodo transparente basado en la combinación de óxidos, metales y óxidos conductores transparentes.
US20110214730A1 (en) * 2010-03-04 2011-09-08 Casio Computer Co., Ltd. Dye-sensitized solar cell
CN102194898B (zh) * 2010-03-15 2013-03-27 常州天合光能有限公司 太阳能电池用导电镍浆
EP2602816A1 (de) * 2010-08-06 2013-06-12 Asahi Glass Company, Limited Trägersubstrat
KR101132032B1 (ko) * 2010-08-11 2012-04-02 삼성에스디아이 주식회사 광전 변환 소자용 전극, 이의 제조 방법 및 이를 포함하는 광전 변환 소자
CN103080783B (zh) * 2010-09-01 2016-03-16 东洋纺株式会社 光扩散膜层叠体
TWI407579B (zh) 2010-09-08 2013-09-01 Ind Tech Res Inst 基板電極結構的製造方法
US9356172B2 (en) 2010-09-16 2016-05-31 Lg Innotek Co., Ltd. Solar cell and method for manufacturing same
KR101091375B1 (ko) * 2010-09-16 2011-12-07 엘지이노텍 주식회사 태양 전지 및 이의 제조 방법
CN101964398A (zh) * 2010-10-11 2011-02-02 福建钧石能源有限公司 柔性薄膜太阳能电池及其制造方法
EP2634778B1 (de) * 2010-10-29 2019-04-24 LINTEC Corporation Transparenter leitfähiger film, elektronische vorrichtung und verfahren zur herstellung der elektronischen vorrichtung
KR101628393B1 (ko) * 2010-11-05 2016-06-22 현대자동차주식회사 광전변환 소자용 전도성 기판의 제조방법
US20130008687A1 (en) * 2011-07-08 2013-01-10 Industrial Technology Research Institute Conductive film structure capable of resisting moisture and oxygen and electronic apparatus using the same
US8529747B2 (en) * 2011-07-12 2013-09-10 The Boeing Company Methods for repairing steel components
WO2013073045A1 (ja) * 2011-11-18 2013-05-23 三洋電機株式会社 太陽電池及び太陽電池の製造方法
WO2014008396A1 (en) * 2012-07-03 2014-01-09 Massachusetts Institute Technology Virus film as template for porous inorganic scaffolds
CN102800752A (zh) * 2012-08-16 2012-11-28 青海天普太阳能科技有限公司 一种柔性硅基太阳能电池扩散阻挡层的制备方法
CN103187119B (zh) * 2013-02-06 2014-08-06 南昌欧菲光科技有限公司 导电膜及其制备方法以及包含该导电膜的触摸屏
US10840400B2 (en) * 2013-08-29 2020-11-17 Taiwan Semiconductor Manufacturing Co., Ltd. Photovoltaic device with back reflector
KR20150031917A (ko) * 2013-09-17 2015-03-25 엘지이노텍 주식회사 전극 플레이트와 이를 이용하는 전기변색 플레이트, 전기변색 미러 및 디스플레이 장치
US20150228374A1 (en) * 2014-02-07 2015-08-13 E I Du Pont De Nemours And Company Thermally conductive electronic substrates and methods relating thereto
JP6310312B2 (ja) * 2014-04-18 2018-04-11 キヤノン株式会社 光電変換素子およびその製造方法
JP6832658B2 (ja) * 2016-09-23 2021-02-24 スタンレー電気株式会社 光透過基板、表示装置、信号装置、および、照明装置
WO2019165234A1 (en) * 2018-02-23 2019-08-29 Ohio State Innovation Foundation Passivated conductive films, and electroactuators containing same
CN111129189B (zh) * 2019-12-11 2022-04-12 中国电子科技集团公司第十八研究所 一种空间用ito玻璃盖片及制备方法

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JP2003203681A (ja) 2001-12-28 2003-07-18 Fujikura Ltd 光電変換素子用導電性ガラス

Also Published As

Publication number Publication date
JP4071719B2 (ja) 2008-04-02
WO2003081609A1 (en) 2003-10-02
KR20040095320A (ko) 2004-11-12
EP1489628A1 (de) 2004-12-22
AU2003236063B2 (en) 2006-04-06
CN1643621A (zh) 2005-07-20
US20050034755A1 (en) 2005-02-17
TW200306014A (en) 2003-11-01
US8546683B2 (en) 2013-10-01
CN1326158C (zh) 2007-07-11
JPWO2003081609A1 (ja) 2005-07-28
ATE490542T1 (de) 2010-12-15
AU2003236063A1 (en) 2003-10-08
EP1489628B1 (de) 2010-12-01
EP1489628A4 (de) 2008-01-02
TWI234885B (en) 2005-06-21
KR100612458B1 (ko) 2006-08-16

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