DE60304850D1 - Apparat mit gasbetriebenem planeten-drehteller und verfahren zur herstellung von siliziumkarbidschichten - Google Patents

Apparat mit gasbetriebenem planeten-drehteller und verfahren zur herstellung von siliziumkarbidschichten

Info

Publication number
DE60304850D1
DE60304850D1 DE60304850T DE60304850T DE60304850D1 DE 60304850 D1 DE60304850 D1 DE 60304850D1 DE 60304850 T DE60304850 T DE 60304850T DE 60304850 T DE60304850 T DE 60304850T DE 60304850 D1 DE60304850 D1 DE 60304850D1
Authority
DE
Germany
Prior art keywords
gas
planet
operated
satellite
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60304850T
Other languages
English (en)
Other versions
DE60304850T2 (de
Inventor
James Paisley
John Sumakeris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of DE60304850D1 publication Critical patent/DE60304850D1/de
Application granted granted Critical
Publication of DE60304850T2 publication Critical patent/DE60304850T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B25/00—Annealing glass products
    • C03B25/04—Annealing glass products in a continuous way
    • C03B25/10—Annealing glass products in a continuous way with vertical displacement of the glass products
    • C03B25/12—Annealing glass products in a continuous way with vertical displacement of the glass products of glass sheets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Ceramic Products (AREA)
  • Structures Of Non-Positive Displacement Pumps (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60304850T 2002-04-08 2003-02-04 Apparat mit gasbetriebenem planeten-drehteller und verfahren zur herstellung von siliziumkarbidschichten Expired - Lifetime DE60304850T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/117,858 US6797069B2 (en) 2002-04-08 2002-04-08 Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
US117858 2002-04-08
PCT/US2003/003196 WO2003088325A1 (en) 2002-04-08 2003-02-04 Gas driven planetary rotation apparatus and methods for forming silicon carbide layers

Publications (2)

Publication Number Publication Date
DE60304850D1 true DE60304850D1 (de) 2006-06-01
DE60304850T2 DE60304850T2 (de) 2006-12-28

Family

ID=28674298

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60304850T Expired - Lifetime DE60304850T2 (de) 2002-04-08 2003-02-04 Apparat mit gasbetriebenem planeten-drehteller und verfahren zur herstellung von siliziumkarbidschichten

Country Status (12)

Country Link
US (1) US6797069B2 (de)
EP (3) EP1493175B1 (de)
JP (1) JP4546095B2 (de)
KR (1) KR20040101400A (de)
CN (1) CN100339942C (de)
AT (1) ATE324669T1 (de)
AU (1) AU2003212902A1 (de)
CA (1) CA2478624A1 (de)
DE (1) DE60304850T2 (de)
ES (1) ES2259760T3 (de)
TW (1) TWI275133B (de)
WO (1) WO2003088325A1 (de)

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WO2002097867A1 (de) * 2001-05-29 2002-12-05 Aixtron Ag Aus einem tragkörper und darauf gasgelagerten und drehangetriebenen substrathalter bestehende anordnung
DE10132448A1 (de) * 2001-07-04 2003-01-23 Aixtron Ag CVD-Vorrichtung mit differenziert temperiertem Substrathalter
US20100037827A1 (en) * 2001-07-04 2010-02-18 Johannes Kaeppeler CVD Device with Substrate Holder with Differential Temperature Control
ATE476536T1 (de) * 2002-12-10 2010-08-15 E T C Epitaxial Technology Ct Suszeptorsystem
AU2002368439A1 (en) * 2002-12-10 2004-06-30 Etc Srl Susceptor system
US7112860B2 (en) * 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
US7898047B2 (en) * 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US7109521B2 (en) * 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
US7173285B2 (en) 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
ATE501286T1 (de) * 2004-06-09 2011-03-15 E T C Epitaxial Technology Ct Srl Halterungssystem für behandlungsapparaturen
EP1790757B1 (de) * 2004-07-22 2013-08-14 Toyo Tanso Co., Ltd. Suszeptor
US20080210169A1 (en) * 2005-07-21 2008-09-04 Lpe S.P.A. System for Supporting and Rotating a Susceptor Inside a Treatment Chamber of a Wafer Treating Apparatus
US8052794B2 (en) * 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
US8628622B2 (en) * 2005-09-12 2014-01-14 Cree, Inc. Gas driven rotation apparatus and method for forming crystalline layers
DE102005055252A1 (de) * 2005-11-19 2007-05-24 Aixtron Ag CVD-Reaktor mit gleitgelagerten Suszeptorhalter
KR101292626B1 (ko) * 2006-09-15 2013-08-01 주성엔지니어링(주) 기판 안치 수단 및 이를 구비하는 기판 처리 장치
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
KR100885180B1 (ko) * 2006-12-27 2009-02-23 세메스 주식회사 기판 지지유닛, 그리고 상기 기판 지지유닛을 구비하는기판처리장치 및 방법
KR100854974B1 (ko) * 2007-04-25 2008-08-28 (주)리드 기판 캐리어 및 그것을 사용하는 발광다이오드 제조를 위한장치
DE102007023970A1 (de) * 2007-05-23 2008-12-04 Aixtron Ag Vorrichtung zum Beschichten einer Vielzahl in dichtester Packung auf einem Suszeptor angeordneter Substrate
JP5267262B2 (ja) * 2009-03-25 2013-08-21 豊田合成株式会社 化合物半導体の製造方法、化合物半導体発光素子の製造方法、化合物半導体製造装置
CN102639761B (zh) * 2009-10-09 2015-07-22 克里公司 多旋转外延生长设备和包含该设备的反应器
DE102009044276A1 (de) * 2009-10-16 2011-05-05 Aixtron Ag CVD-Reaktor mit auf einem mehrere Zonen aufweisenden Gaspolster liegenden Substrathalter
JP2011225949A (ja) * 2010-04-21 2011-11-10 Ibiden Co Ltd 炭素部品および炭素部品の製造方法
JP4980461B1 (ja) * 2010-12-24 2012-07-18 三井造船株式会社 誘導加熱装置
WO2012139006A2 (en) * 2011-04-07 2012-10-11 Veeco Instruments Inc. Metal-organic vapor phase epitaxy system and process
KR101395243B1 (ko) * 2011-04-29 2014-05-15 세메스 주식회사 기판처리장치 및 방법
KR101882330B1 (ko) * 2011-06-21 2018-07-27 엘지이노텍 주식회사 증착 장치
DE102012101923B4 (de) * 2012-03-07 2019-11-07 Osram Opto Semiconductors Gmbh Substratträgeranordnung, Beschichtungsanlage mit Substratträgeranordnung und Verfahren zur Durchführung eines Beschichtungsverfahrens
CN103469300A (zh) * 2013-09-24 2013-12-25 瀚天天成电子科技（厦门）有限公司 一种碳化硅外延炉加热基座
JP6058515B2 (ja) * 2013-10-04 2017-01-11 漢民科技股▲分▼有限公司 気相成膜装置
KR101698811B1 (ko) * 2014-10-31 2017-02-01 (주)에스아이 웨이퍼회전장치
US9506147B2 (en) * 2015-02-13 2016-11-29 Eastman Kodak Company Atomic-layer deposition apparatus using compound gas jet
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CN104911701A (zh) * 2015-06-02 2015-09-16 扬州中科半导体照明有限公司 提高mocvd外延片波长均匀性的一种石墨盘组件
CN104911700A (zh) * 2015-06-02 2015-09-16 扬州中科半导体照明有限公司 一种提高mocvd外延片波长良率的卫星盘
JP2017055086A (ja) * 2015-09-11 2017-03-16 昭和電工株式会社 ＳｉＣエピタキシャルウェハの製造方法及びＳｉＣエピタキシャルウェハの製造装置
US10269557B2 (en) 2015-10-20 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus of processing semiconductor substrate
CN105714380A (zh) * 2016-04-26 2016-06-29 北京世纪金光半导体有限公司 一种碳化硅外延生长装置及方法
CN106435719A (zh) * 2016-12-21 2017-02-22 东莞市天域半导体科技有限公司 一种卫星盘自转的SiC外延生长主盘结构
CN108624955B (zh) * 2017-03-16 2019-11-29 北京北方华创微电子装备有限公司 反应腔室及外延生长设备
KR101885026B1 (ko) * 2017-03-22 2018-08-02 오충석 웨이퍼 회전장치
DE102018131751A1 (de) * 2018-12-11 2020-06-18 Aixtron Se Suszeptor eines CVD-Reaktors
IT201900022047A1 (it) * 2019-11-25 2021-05-25 Lpe Spa Dispositivo di supporto substrati per una camera di reazione di un reattore epitassiale con rotazione a flusso di gas, camera di reazione e reattore epitassiale
CN112951739A (zh) * 2019-12-10 2021-06-11 圆益Ips股份有限公司 基板支撑架及基板处理装置
WO2021119900A1 (zh) * 2019-12-16 2021-06-24 东莞市中镓半导体科技有限公司 用于GaN材料生长的气动托盘
CN111607784B (zh) * 2020-06-19 2022-03-15 东莞市中镓半导体科技有限公司 引流旋转式基片承载装置及气相外延设备
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Also Published As

Publication number Publication date
EP1493175A1 (de) 2005-01-05
TW200305203A (en) 2003-10-16
US20030188687A1 (en) 2003-10-09
ES2259760T3 (es) 2006-10-16
JP2005522876A (ja) 2005-07-28
TWI275133B (en) 2007-03-01
EP1562224A1 (de) 2005-08-10
CN1647244A (zh) 2005-07-27
ATE324669T1 (de) 2006-05-15
KR20040101400A (ko) 2004-12-02
WO2003088325A1 (en) 2003-10-23
AU2003212902A1 (en) 2003-10-27
JP4546095B2 (ja) 2010-09-15
CA2478624A1 (en) 2003-10-23
US6797069B2 (en) 2004-09-28
EP1493175B1 (de) 2006-04-26
EP1592044A1 (de) 2005-11-02
CN100339942C (zh) 2007-09-26
DE60304850T2 (de) 2006-12-28

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