SE9102378L - Metod foer diamantbelaeggning med mikrovaagsplasma - Google Patents

Metod foer diamantbelaeggning med mikrovaagsplasma

Info

Publication number
SE9102378L
SE9102378L SE9102378A SE9102378A SE9102378L SE 9102378 L SE9102378 L SE 9102378L SE 9102378 A SE9102378 A SE 9102378A SE 9102378 A SE9102378 A SE 9102378A SE 9102378 L SE9102378 L SE 9102378L
Authority
SE
Sweden
Prior art keywords
diamond coating
microwave plasma
large number
discrete components
shape
Prior art date
Application number
SE9102378A
Other languages
English (en)
Other versions
SE9102378D0 (sv
SE502094C2 (sv
Inventor
S Soederberg
H Shahani
M Sjoestrand
Original Assignee
Sandvik Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandvik Ab filed Critical Sandvik Ab
Priority to SE9102378A priority Critical patent/SE502094C2/sv
Publication of SE9102378D0 publication Critical patent/SE9102378D0/sv
Priority to AT92850194T priority patent/ATE129528T1/de
Priority to EP92850194A priority patent/EP0528778B1/en
Priority to DE69205647T priority patent/DE69205647T2/de
Priority to JP4216862A priority patent/JPH05195225A/ja
Priority to ZA926149A priority patent/ZA926149B/xx
Publication of SE9102378L publication Critical patent/SE9102378L/sv
Priority to US08/251,661 priority patent/US5482748A/en
Publication of SE502094C2 publication Critical patent/SE502094C2/sv
Priority to US08/538,851 priority patent/US5567242A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2007—Holding mechanisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
SE9102378A 1991-08-16 1991-08-16 Metod för diamantbeläggning med mikrovågsplasma SE502094C2 (sv)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SE9102378A SE502094C2 (sv) 1991-08-16 1991-08-16 Metod för diamantbeläggning med mikrovågsplasma
AT92850194T ATE129528T1 (de) 1991-08-16 1992-08-14 Verfahren zur herstellung von diamantschichten mittels durch mikrowellenplasma unterstützte cvd.
EP92850194A EP0528778B1 (en) 1991-08-16 1992-08-14 Method for microwave plasma assisted CVD diamond coating
DE69205647T DE69205647T2 (de) 1991-08-16 1992-08-14 Verfahren zur Herstellung von Diamantschichten mittels durch Mikrowellenplasma unterstützte CVD.
JP4216862A JPH05195225A (ja) 1991-08-16 1992-08-14 マイクロウェーブプラズマｃｖｄ方式のダイヤモンド沈着被覆方法
ZA926149A ZA926149B (en) 1991-08-16 1992-08-14 Method for microwave plasma assisted CVD diamond coating.
US08/251,661 US5482748A (en) 1991-08-16 1994-05-31 Method for diamond coating by microwave plasma
US08/538,851 US5567242A (en) 1991-08-16 1995-10-04 Apparatus for depositing diamond coating in reactor equipped with a bowl-shaped substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9102378A SE502094C2 (sv) 1991-08-16 1991-08-16 Metod för diamantbeläggning med mikrovågsplasma

Publications (3)

Publication Number Publication Date
SE9102378D0 SE9102378D0 (sv) 1991-08-16
SE9102378L true SE9102378L (sv) 1993-02-17
SE502094C2 SE502094C2 (sv) 1995-08-14

Family

ID=20383487

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9102378A SE502094C2 (sv) 1991-08-16 1991-08-16 Metod för diamantbeläggning med mikrovågsplasma

Country Status (7)

Country Link
US (2) US5482748A (sv)
EP (1) EP0528778B1 (sv)
JP (1) JPH05195225A (sv)
AT (1) ATE129528T1 (sv)
DE (1) DE69205647T2 (sv)
SE (1) SE502094C2 (sv)
ZA (1) ZA926149B (sv)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5643639A (en) * 1994-12-22 1997-07-01 Research Triangle Institute Plasma treatment method for treatment of a large-area work surface apparatus and methods
US6030902A (en) * 1996-02-16 2000-02-29 Micron Technology Inc Apparatus and method for improving uniformity in batch processing of semiconductor wafers
US6344149B1 (en) 1998-11-10 2002-02-05 Kennametal Pc Inc. Polycrystalline diamond member and method of making the same
SE528670C2 (sv) * 2004-12-22 2007-01-16 Sandvik Intellectual Property Skär belagt med ett transparent färgskikt
CN100387753C (zh) * 2005-10-14 2008-05-14 南京航空航天大学 在球面衬底上制造金刚石涂层的方法及其装置
US8493548B2 (en) * 2007-08-06 2013-07-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20120192789A1 (en) * 2010-04-14 2012-08-02 Solexel, Inc. Deposition systems and processes
KR101369282B1 (ko) 2010-06-09 2014-03-04 솔렉셀, 인크. 고생산성 박막 증착 방법 및 시스템
US20130272928A1 (en) * 2012-04-12 2013-10-17 Devi Shanker Misra Apparatus for the deposition of diamonds by microwave plasma chemical vapour deposition process and substrate stage used therein
GB201222395D0 (en) * 2012-12-12 2013-01-23 Element Six Ltd Microwave plasma CVD synthetic diamond growth on non-planar and/or non-refractory substrates
CN205845916U (zh) * 2013-07-09 2016-12-28 应用材料公司 用于处理基板的设备
CN110331381A (zh) * 2019-06-11 2019-10-15 康佳集团股份有限公司 一种外延片生长炉、设备、mocvd方法及外延片
CN110983298A (zh) * 2019-12-24 2020-04-10 中国科学院半导体研究所 一种用于微波等离子体化学气相沉积装置的样品台结构
KR102512743B1 (ko) * 2020-12-18 2023-03-22 주식회사 케이디티다이아몬드 다이아몬드 합성용 마이크로파 플라즈마 cvd 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE442305B (sv) * 1984-06-27 1985-12-16 Santrade Ltd Forfarande for kemisk gasutfellning (cvd) for framstellning av en diamantbelagd sammansatt kropp samt anvendning av kroppen
EP0300047B1 (en) * 1987-01-26 1991-10-23 Shiseido Company Limited Synthetic mica powder, process for its production, and cosmetics containing said synthetic mica powder
US5271971A (en) * 1987-03-30 1993-12-21 Crystallume Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material
JPS6461396A (en) * 1987-09-01 1989-03-08 Idemitsu Petrochemical Co Synthesis of diamond and installation therefor
US4804431A (en) * 1987-11-03 1989-02-14 Aaron Ribner Microwave plasma etching machine and method of etching
DE68908729T3 (de) * 1988-02-01 1998-02-12 Sumitomo Electric Industries Diamant und seine Darstellung durch ein Verfahren mittels Abscheidung aus der Gasphase.
GB8810111D0 (en) * 1988-04-28 1988-06-02 Jones B L Diamond growth
US4943345A (en) * 1989-03-23 1990-07-24 Board Of Trustees Operating Michigan State University Plasma reactor apparatus and method for treating a substrate
DE3941837C2 (de) * 1989-12-19 1994-01-13 Bosch Gmbh Robert Widerstandsmeßfühler zur Erfassung des Sauerstoffgehaltes in Gasgemischen und Verfahren zu seiner Herstellung
US5236511A (en) * 1990-03-16 1993-08-17 Schott Glaswerke Plasma CVD process for coating a dome-shaped substrate
JP2913745B2 (ja) * 1990-04-10 1999-06-28 松下電器産業株式会社 真空蒸着装置
US5169676A (en) * 1991-05-16 1992-12-08 The United States Of America As Represented By The Secretary Of The Navy Control of crystallite size in diamond film chemical vapor deposition
DE4120176C1 (sv) * 1991-06-19 1992-02-27 Schott Glaswerke, 6500 Mainz, De
US5175019A (en) * 1991-09-30 1992-12-29 Texas Instruments Incorporated Method for depositing a thin film
JP3253734B2 (ja) * 1992-06-19 2002-02-04 富士通株式会社 半導体装置製造用の石英製装置
FR2702088B1 (fr) * 1993-02-24 1995-05-24 Sgs Thomson Microelectronics Nacelle pour plaquettes de silicium.

Also Published As

Publication number Publication date
EP0528778A1 (en) 1993-02-24
DE69205647D1 (de) 1995-11-30
US5482748A (en) 1996-01-09
JPH05195225A (ja) 1993-08-03
US5567242A (en) 1996-10-22
ZA926149B (en) 1993-03-01
SE9102378D0 (sv) 1991-08-16
EP0528778B1 (en) 1995-10-25
DE69205647T2 (de) 1996-03-21
ATE129528T1 (de) 1995-11-15
SE502094C2 (sv) 1995-08-14

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