DE60234409D1 - Säuregenerator, Sulfonsäure, Sulfonsäurederivate und strahlungsempfindliche Zusammensetzung - Google Patents
Säuregenerator, Sulfonsäure, Sulfonsäurederivate und strahlungsempfindliche ZusammensetzungInfo
- Publication number
- DE60234409D1 DE60234409D1 DE60234409T DE60234409T DE60234409D1 DE 60234409 D1 DE60234409 D1 DE 60234409D1 DE 60234409 T DE60234409 T DE 60234409T DE 60234409 T DE60234409 T DE 60234409T DE 60234409 D1 DE60234409 D1 DE 60234409D1
- Authority
- DE
- Germany
- Prior art keywords
- sulfonic acid
- radiation
- sensitive composition
- acid
- generator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 title 1
- 239000002253 acid Substances 0.000 title 1
- 230000005855 radiation Effects 0.000 title 1
- 150000003458 sulfonic acid derivatives Chemical class 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/23—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an unsaturated carbon skeleton containing rings other than six-membered aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
- C07C309/17—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing carboxyl groups bound to the carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
- C07C309/01—Sulfonic acids
- C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
- C07C309/19—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton containing rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
- C07C381/12—Sulfonium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
- C07D333/46—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings substituted on the ring sulfur atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/78—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems condensed with rings other than six-membered or with ring systems containing such rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D335/00—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
- C07D335/02—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D347/00—Heterocyclic compounds containing rings having halogen atoms as ring hetero atoms
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2602/00—Systems containing two condensed rings
- C07C2602/36—Systems containing two condensed rings the rings having more than two atoms in common
- C07C2602/42—Systems containing two condensed rings the rings having more than two atoms in common the bicyclo ring system containing seven carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/56—Ring systems containing bridged rings
- C07C2603/86—Ring systems containing bridged rings containing four rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001200154 | 2001-06-29 | ||
JP2001371311A JP3826777B2 (ja) | 2001-12-05 | 2001-12-05 | 感放射線性樹脂組成物 |
JP2002081235 | 2002-03-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60234409D1 true DE60234409D1 (de) | 2009-12-31 |
Family
ID=27347065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60234409T Expired - Lifetime DE60234409D1 (de) | 2001-06-29 | 2002-06-28 | Säuregenerator, Sulfonsäure, Sulfonsäurederivate und strahlungsempfindliche Zusammensetzung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6908722B2 (fr) |
EP (1) | EP1270553B1 (fr) |
KR (1) | KR100863119B1 (fr) |
CN (2) | CN1276303C (fr) |
DE (1) | DE60234409D1 (fr) |
SG (1) | SG120873A1 (fr) |
Families Citing this family (140)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19840943A1 (de) * | 1998-09-08 | 2000-03-09 | Aventis Res & Tech Gmbh & Co | Verfahren zur Herstellung von Derivaten des 4-Alkylsulfinylmethylarylenmethanols |
JP4838437B2 (ja) * | 2000-06-16 | 2011-12-14 | Jsr株式会社 | 感放射線性樹脂組成物 |
US6749987B2 (en) * | 2000-10-20 | 2004-06-15 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
JP3826777B2 (ja) * | 2001-12-05 | 2006-09-27 | Jsr株式会社 | 感放射線性樹脂組成物 |
KR100944140B1 (ko) * | 2002-03-20 | 2010-02-24 | 스미또모 가가꾸 가부시끼가이샤 | 포지티브형 레지스트 조성물 |
TWI314943B (en) * | 2002-08-29 | 2009-09-21 | Radiation-sensitive resin composition | |
JP3937996B2 (ja) * | 2002-10-08 | 2007-06-27 | Jsr株式会社 | 感放射性樹脂組成物 |
US6841333B2 (en) * | 2002-11-01 | 2005-01-11 | 3M Innovative Properties Company | Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions |
EP1586570A4 (fr) * | 2003-01-22 | 2007-06-20 | Jsr Corp | Sels de sulfonium, generateurs d'acides sensibles au rayonnement, et compositions de resine sensibles au rayonnement positif |
KR20050107599A (ko) * | 2003-03-05 | 2005-11-14 | 제이에스알 가부시끼가이샤 | 산 발생제, 술폰산, 술포닐할라이드 화합물 및 감방사선성수지 조성물 |
JP4083053B2 (ja) * | 2003-03-31 | 2008-04-30 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
US7122294B2 (en) | 2003-05-22 | 2006-10-17 | 3M Innovative Properties Company | Photoacid generators with perfluorinated multifunctional anions |
CN1802603A (zh) | 2003-07-17 | 2006-07-12 | 霍尼韦尔国际公司 | 用于高级微电子应用的平面化薄膜及其生产装置和方法 |
KR101036793B1 (ko) * | 2003-07-18 | 2011-05-25 | 오지 세이시 가부시키가이샤 | 시트상 발포체 및 그 제조 방법 |
JP4192068B2 (ja) * | 2003-10-07 | 2008-12-03 | 信越化学工業株式会社 | 感放射線性樹脂組成物並びにこれを用いたパターン形成方法 |
US6939664B2 (en) * | 2003-10-24 | 2005-09-06 | International Business Machines Corporation | Low-activation energy silicon-containing resist system |
JP4355917B2 (ja) * | 2003-10-29 | 2009-11-04 | 信越化学工業株式会社 | 含窒素有機化合物、レジスト材料及びパターン形成方法 |
JP4443898B2 (ja) * | 2003-11-13 | 2010-03-31 | 富士フイルム株式会社 | 感光性組成物及びそれを用いたパターン形成方法 |
US8053159B2 (en) | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
US20050106494A1 (en) * | 2003-11-19 | 2005-05-19 | International Business Machines Corporation | Silicon-containing resist systems with cyclic ketal protecting groups |
JP2005215112A (ja) * | 2004-01-28 | 2005-08-11 | Tokyo Ohka Kogyo Co Ltd | ネガ型レジスト組成物、および、レジストパターン形成方法 |
JP4448705B2 (ja) * | 2004-02-05 | 2010-04-14 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
US7449573B2 (en) | 2004-02-16 | 2008-11-11 | Fujifilm Corporation | Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition |
WO2005089355A2 (fr) * | 2004-03-16 | 2005-09-29 | Cornell Research Foundation, Inc. | Generateurs photoacides (pag) ecologiques depourvus de perfluorooctyl sulfonates (pfos) |
WO2005101129A1 (fr) * | 2004-04-16 | 2005-10-27 | Jsr Corporation | Composition en résine sensible à la radiation |
JP4488215B2 (ja) * | 2004-08-19 | 2010-06-23 | 信越化学工業株式会社 | レジスト組成物並びにこれを用いたパターン形成方法 |
US20060046183A1 (en) * | 2004-08-26 | 2006-03-02 | Wang Yueh | Photoresist formulation with surfactant additive |
JP2006106311A (ja) * | 2004-10-05 | 2006-04-20 | Shin Etsu Chem Co Ltd | ケイ素含有レジスト組成物並びにこれを用いたパターン形成方法 |
JP4452632B2 (ja) * | 2005-01-24 | 2010-04-21 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
TWI394004B (zh) * | 2005-03-30 | 2013-04-21 | Sumitomo Chemical Co | 適合作為酸產生劑之鹽及含有該鹽之化學放大型光阻組成物 |
TWI378325B (en) * | 2005-03-30 | 2012-12-01 | Sumitomo Chemical Co | Salt suitable for an acid generator and a chemically amplified resist composition containing the same |
TWI332122B (en) * | 2005-04-06 | 2010-10-21 | Shinetsu Chemical Co | Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process |
JP4626758B2 (ja) * | 2005-07-07 | 2011-02-09 | 信越化学工業株式会社 | 含フッ素環状構造を有するケイ素化合物及びシリコーン樹脂、それを用いたレジスト組成物、及びパターン形成方法 |
US7521170B2 (en) * | 2005-07-12 | 2009-04-21 | Az Electronic Materials Usa Corp. | Photoactive compounds |
CN1955845B (zh) * | 2005-10-28 | 2012-06-13 | 住友化学株式会社 | 适合于酸生成剂的盐和含有该盐的化学放大型抗蚀剂组合物 |
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EP1780199B1 (fr) * | 2005-10-31 | 2012-02-01 | Shin-Etsu Chemical Co., Ltd. | Sels de sulfonate fluorohydroxyalkylé et dérivés, générateurs de photoacide, compositions de résist, ainsi que procédé de formation de motifs |
US7678528B2 (en) * | 2005-11-16 | 2010-03-16 | Az Electronic Materials Usa Corp. | Photoactive compounds |
TWI395062B (zh) * | 2005-11-21 | 2013-05-01 | Sumitomo Chemical Co | 適合酸產生劑之鹽及含有該鹽之化學增幅阻劑組成物 |
JP4421566B2 (ja) * | 2005-12-26 | 2010-02-24 | チェイル インダストリーズ インコーポレイテッド | フォトレジスト下層膜用ハードマスク組成物及びこれを利用した半導体集積回路デバイスの製造方法 |
US7932334B2 (en) * | 2005-12-27 | 2011-04-26 | Sumitomo Chemical Company, Limited | Resin suitable for an acid generator |
TWI381246B (zh) * | 2005-12-27 | 2013-01-01 | Sumitomo Chemical Co | 適用於酸產生劑的鹽及含有該鹽之化學增幅型阻劑組成物 |
JP4687898B2 (ja) * | 2006-03-14 | 2011-05-25 | 信越化学工業株式会社 | 含フッ素ケイ素化合物、シリコーン樹脂、それを用いたレジスト組成物、及びパターン形成方法 |
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JP4844761B2 (ja) * | 2008-01-18 | 2011-12-28 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
JP4513990B2 (ja) * | 2008-01-18 | 2010-07-28 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
JP4513989B2 (ja) | 2008-01-18 | 2010-07-28 | 信越化学工業株式会社 | ポジ型レジスト材料及びパターン形成方法 |
US8163461B2 (en) * | 2008-04-09 | 2012-04-24 | Cornell Research Foundation, Inc. | Photoacid generator compounds and compositions |
TWI528106B (zh) * | 2008-07-14 | 2016-04-01 | Jsr股份有限公司 | 敏輻射線性樹脂組成物 |
TWI490199B (zh) * | 2009-03-11 | 2015-07-01 | Sumitomo Chemical Co | 化合物及化學放大型正光阻組成物 |
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-
2002
- 2002-06-28 SG SG200203901A patent/SG120873A1/en unknown
- 2002-06-28 US US10/183,441 patent/US6908722B2/en not_active Expired - Lifetime
- 2002-06-28 EP EP02014416A patent/EP1270553B1/fr not_active Expired - Lifetime
- 2002-06-28 CN CNB021606439A patent/CN1276303C/zh not_active Expired - Fee Related
- 2002-06-28 KR KR1020020036602A patent/KR100863119B1/ko active IP Right Grant
- 2002-06-28 DE DE60234409T patent/DE60234409D1/de not_active Expired - Lifetime
- 2002-06-28 CN CN2006101267015A patent/CN1916760B/zh not_active Expired - Fee Related
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EP1270553A3 (fr) | 2004-04-21 |
EP1270553B1 (fr) | 2009-11-18 |
EP1270553A2 (fr) | 2003-01-02 |
KR20030023462A (ko) | 2003-03-19 |
CN1916760A (zh) | 2007-02-21 |
CN1432873A (zh) | 2003-07-30 |
CN1276303C (zh) | 2006-09-20 |
KR100863119B1 (ko) | 2008-10-14 |
CN1916760B (zh) | 2010-10-13 |
US6908722B2 (en) | 2005-06-21 |
US20030113658A1 (en) | 2003-06-19 |
SG120873A1 (en) | 2006-04-26 |
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