DE60223263T2 - Farbbildsensor auf einem transparenten substrat und verfahren zu seiner herstellung - Google Patents
Farbbildsensor auf einem transparenten substrat und verfahren zu seiner herstellung Download PDFInfo
- Publication number
- DE60223263T2 DE60223263T2 DE60223263T DE60223263T DE60223263T2 DE 60223263 T2 DE60223263 T2 DE 60223263T2 DE 60223263 T DE60223263 T DE 60223263T DE 60223263 T DE60223263 T DE 60223263T DE 60223263 T2 DE60223263 T2 DE 60223263T2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- wafer
- preliminary
- image sensor
- transparent substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims description 75
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000012546 transfer Methods 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 8
- 238000010790 dilution Methods 0.000 claims description 7
- 239000012895 dilution Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000002178 crystalline material Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 54
- 229910052710 silicon Inorganic materials 0.000 description 32
- 239000010703 silicon Substances 0.000 description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 31
- 238000002513 implantation Methods 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 238000004026 adhesive bonding Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000012993 chemical processing Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 241001295925 Gegenes Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000010028 chemical finishing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000003113 dilution method Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/182—Colour image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0111335A FR2829290B1 (fr) | 2001-08-31 | 2001-08-31 | Capteur d'image couleur sur substrat transparent et procede de fabrication |
| FR0111335 | 2001-08-31 | ||
| PCT/FR2002/002977 WO2003019667A1 (fr) | 2001-08-31 | 2002-08-30 | Capteur d'image couleur sur substrat transparent et procede de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60223263D1 DE60223263D1 (de) | 2007-12-13 |
| DE60223263T2 true DE60223263T2 (de) | 2008-08-14 |
Family
ID=8866878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60223263T Expired - Lifetime DE60223263T2 (de) | 2001-08-31 | 2002-08-30 | Farbbildsensor auf einem transparenten substrat und verfahren zu seiner herstellung |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6933585B2 (enExample) |
| EP (1) | EP1421622B1 (enExample) |
| JP (1) | JP4147187B2 (enExample) |
| KR (1) | KR100919964B1 (enExample) |
| CN (1) | CN100487899C (enExample) |
| CA (1) | CA2457899C (enExample) |
| DE (1) | DE60223263T2 (enExample) |
| FR (1) | FR2829290B1 (enExample) |
| IL (2) | IL160113A0 (enExample) |
| WO (1) | WO2003019667A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2863773B1 (fr) * | 2003-12-12 | 2006-05-19 | Atmel Grenoble Sa | Procede de fabrication de puces electroniques en silicium aminci |
| JP4486043B2 (ja) * | 2004-12-30 | 2010-06-23 | 東部エレクトロニクス株式会社 | Ｃｍｏｓイメージセンサー及びその製造方法 |
| KR100741920B1 (ko) * | 2004-12-30 | 2007-07-24 | 동부일렉트로닉스 주식회사 | 씨모스(ｃｍｏｓ) 이미지 센서의 제조 방법 |
| US8409970B2 (en) * | 2005-10-29 | 2013-04-02 | Stats Chippac, Ltd. | Semiconductor device and method of making integrated passive devices |
| US8158510B2 (en) | 2009-11-19 | 2012-04-17 | Stats Chippac, Ltd. | Semiconductor device and method of forming IPD on molded substrate |
| US8791006B2 (en) | 2005-10-29 | 2014-07-29 | Stats Chippac, Ltd. | Semiconductor device and method of forming an inductor on polymer matrix composite substrate |
| DE102006014247B4 (de) * | 2006-03-28 | 2019-10-24 | Robert Bosch Gmbh | Bildaufnahmesystem und Verfahren zu dessen Herstellung |
| US20090174018A1 (en) * | 2008-01-09 | 2009-07-09 | Micron Technology, Inc. | Construction methods for backside illuminated image sensors |
| JP5347520B2 (ja) | 2009-01-20 | 2013-11-20 | ソニー株式会社 | 固体撮像装置の製造方法 |
| US8310021B2 (en) * | 2010-07-13 | 2012-11-13 | Honeywell International Inc. | Neutron detector with wafer-to-wafer bonding |
| KR20180114927A (ko) * | 2016-02-16 | 2018-10-19 | 쥐-레이 스위츨란드 에스에이 | 접합된 경계면들에 걸친 전하 운반을 위한 구조물, 시스템 및 방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4758734A (en) * | 1984-03-13 | 1988-07-19 | Nec Corporation | High resolution image sensor array using amorphous photo-diodes |
| US4976802A (en) * | 1989-10-16 | 1990-12-11 | Xerox Corporation | Process for assembling smaller scanning or printing arrays together to form a longer array |
| JPH05183141A (ja) * | 1991-07-12 | 1993-07-23 | Fuji Xerox Co Ltd | カラーイメージセンサ |
| US5244817A (en) * | 1992-08-03 | 1993-09-14 | Eastman Kodak Company | Method of making backside illuminated image sensors |
| US6059188A (en) * | 1993-10-25 | 2000-05-09 | Symbol Technologies | Packaged mirror including mirror travel stops |
| JPH0945886A (ja) * | 1995-08-01 | 1997-02-14 | Sharp Corp | 増幅型半導体撮像装置 |
| US6204087B1 (en) * | 1997-02-07 | 2001-03-20 | University Of Hawai'i | Fabrication of three-dimensional architecture for solid state radiation detectors |
-
2001
- 2001-08-31 FR FR0111335A patent/FR2829290B1/fr not_active Expired - Fee Related
-
2002
- 2002-08-30 EP EP02796331A patent/EP1421622B1/fr not_active Expired - Lifetime
- 2002-08-30 KR KR1020047001560A patent/KR100919964B1/ko not_active Expired - Fee Related
- 2002-08-30 WO PCT/FR2002/002977 patent/WO2003019667A1/fr not_active Ceased
- 2002-08-30 DE DE60223263T patent/DE60223263T2/de not_active Expired - Lifetime
- 2002-08-30 CN CNB028170423A patent/CN100487899C/zh not_active Expired - Fee Related
- 2002-08-30 CA CA2457899A patent/CA2457899C/fr not_active Expired - Fee Related
- 2002-08-30 IL IL16011302A patent/IL160113A0/xx unknown
- 2002-08-30 JP JP2003523013A patent/JP4147187B2/ja not_active Expired - Fee Related
- 2002-08-30 US US10/485,694 patent/US6933585B2/en not_active Expired - Fee Related
-
2004
- 2004-01-29 IL IL160113A patent/IL160113A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US20040188792A1 (en) | 2004-09-30 |
| CA2457899C (fr) | 2012-07-03 |
| EP1421622B1 (fr) | 2007-10-31 |
| FR2829290B1 (fr) | 2004-09-17 |
| DE60223263D1 (de) | 2007-12-13 |
| CA2457899A1 (fr) | 2003-03-06 |
| KR100919964B1 (ko) | 2009-10-01 |
| IL160113A0 (en) | 2004-06-20 |
| WO2003019667A1 (fr) | 2003-03-06 |
| FR2829290A1 (fr) | 2003-03-07 |
| IL160113A (en) | 2009-07-20 |
| CN100487899C (zh) | 2009-05-13 |
| JP4147187B2 (ja) | 2008-09-10 |
| CN1550041A (zh) | 2004-11-24 |
| US6933585B2 (en) | 2005-08-23 |
| JP2005501420A (ja) | 2005-01-13 |
| KR20040047783A (ko) | 2004-06-05 |
| EP1421622A1 (fr) | 2004-05-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8381 | Inventor (new situation) |
Inventor name: BRISSOT, LOUIS, F-94117 ARCUEIL CEDEX, FR Inventor name: POURQUIER, ERIC, F-94117 ARCUEIL CEDEX, FR |
|
| 8364 | No opposition during term of opposition |