CN100487899C - 位于透明基片上的彩色图像传感器及其制造方法 - Google Patents

位于透明基片上的彩色图像传感器及其制造方法 Download PDF

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Publication number
CN100487899C
CN100487899C CNB028170423A CN02817042A CN100487899C CN 100487899 C CN100487899 C CN 100487899C CN B028170423 A CNB028170423 A CN B028170423A CN 02817042 A CN02817042 A CN 02817042A CN 100487899 C CN100487899 C CN 100487899C
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CN
China
Prior art keywords
substrate
layer
interim
transparent substrate
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028170423A
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English (en)
Chinese (zh)
Other versions
CN1550041A (zh
Inventor
路易·布里索
埃里克·普尔基耶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
E2v Semiconductor Co
Teledyne e2v Semiconductors SAS
Original Assignee
E2v Semiconductor Co
Atmel Grenoble SA
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Publication date
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Publication of CN1550041A publication Critical patent/CN1550041A/zh
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Publication of CN100487899C publication Critical patent/CN100487899C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CNB028170423A 2001-08-31 2002-08-30 位于透明基片上的彩色图像传感器及其制造方法 Expired - Fee Related CN100487899C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0111335A FR2829290B1 (fr) 2001-08-31 2001-08-31 Capteur d'image couleur sur substrat transparent et procede de fabrication
FR01/11335 2001-08-31

Publications (2)

Publication Number Publication Date
CN1550041A CN1550041A (zh) 2004-11-24
CN100487899C true CN100487899C (zh) 2009-05-13

Family

ID=8866878

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028170423A Expired - Fee Related CN100487899C (zh) 2001-08-31 2002-08-30 位于透明基片上的彩色图像传感器及其制造方法

Country Status (10)

Country Link
US (1) US6933585B2 (enExample)
EP (1) EP1421622B1 (enExample)
JP (1) JP4147187B2 (enExample)
KR (1) KR100919964B1 (enExample)
CN (1) CN100487899C (enExample)
CA (1) CA2457899C (enExample)
DE (1) DE60223263T2 (enExample)
FR (1) FR2829290B1 (enExample)
IL (2) IL160113A0 (enExample)
WO (1) WO2003019667A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2863773B1 (fr) * 2003-12-12 2006-05-19 Atmel Grenoble Sa Procede de fabrication de puces electroniques en silicium aminci
JP4486043B2 (ja) * 2004-12-30 2010-06-23 東部エレクトロニクス株式会社 Ｃｍｏｓイメージセンサー及びその製造方法
KR100741920B1 (ko) * 2004-12-30 2007-07-24 동부일렉트로닉스 주식회사 씨모스(ｃｍｏｓ) 이미지 센서의 제조 방법
US8409970B2 (en) * 2005-10-29 2013-04-02 Stats Chippac, Ltd. Semiconductor device and method of making integrated passive devices
US8158510B2 (en) 2009-11-19 2012-04-17 Stats Chippac, Ltd. Semiconductor device and method of forming IPD on molded substrate
US8791006B2 (en) 2005-10-29 2014-07-29 Stats Chippac, Ltd. Semiconductor device and method of forming an inductor on polymer matrix composite substrate
DE102006014247B4 (de) * 2006-03-28 2019-10-24 Robert Bosch Gmbh Bildaufnahmesystem und Verfahren zu dessen Herstellung
US20090174018A1 (en) * 2008-01-09 2009-07-09 Micron Technology, Inc. Construction methods for backside illuminated image sensors
JP5347520B2 (ja) 2009-01-20 2013-11-20 ソニー株式会社 固体撮像装置の製造方法
US8310021B2 (en) * 2010-07-13 2012-11-13 Honeywell International Inc. Neutron detector with wafer-to-wafer bonding
KR20180114927A (ko) * 2016-02-16 2018-10-19 쥐-레이 스위츨란드 에스에이 접합된 경계면들에 걸친 전하 운반을 위한 구조물, 시스템 및 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5244817A (en) * 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors
US5274250A (en) * 1991-07-12 1993-12-28 Fuji Xerox Co., Ltd. Color image sensor with light-shielding layer
US6257491B1 (en) * 1993-10-25 2001-07-10 Symbol Technologies, Inc. Packaged mirror including mirror travel stops

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758734A (en) * 1984-03-13 1988-07-19 Nec Corporation High resolution image sensor array using amorphous photo-diodes
US4976802A (en) * 1989-10-16 1990-12-11 Xerox Corporation Process for assembling smaller scanning or printing arrays together to form a longer array
JPH0945886A (ja) * 1995-08-01 1997-02-14 Sharp Corp 増幅型半導体撮像装置
US6204087B1 (en) * 1997-02-07 2001-03-20 University Of Hawai'i Fabrication of three-dimensional architecture for solid state radiation detectors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274250A (en) * 1991-07-12 1993-12-28 Fuji Xerox Co., Ltd. Color image sensor with light-shielding layer
US5244817A (en) * 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors
US6257491B1 (en) * 1993-10-25 2001-07-10 Symbol Technologies, Inc. Packaged mirror including mirror travel stops

Also Published As

Publication number Publication date
US20040188792A1 (en) 2004-09-30
CA2457899C (fr) 2012-07-03
DE60223263T2 (de) 2008-08-14
EP1421622B1 (fr) 2007-10-31
FR2829290B1 (fr) 2004-09-17
DE60223263D1 (de) 2007-12-13
CA2457899A1 (fr) 2003-03-06
KR100919964B1 (ko) 2009-10-01
IL160113A0 (en) 2004-06-20
WO2003019667A1 (fr) 2003-03-06
FR2829290A1 (fr) 2003-03-07
IL160113A (en) 2009-07-20
JP4147187B2 (ja) 2008-09-10
CN1550041A (zh) 2004-11-24
US6933585B2 (en) 2005-08-23
JP2005501420A (ja) 2005-01-13
KR20040047783A (ko) 2004-06-05
EP1421622A1 (fr) 2004-05-26

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SE01 Entry into force of request for substantive examination
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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090513

Termination date: 20120830