FR2829290B1 - Capteur d'image couleur sur substrat transparent et procede de fabrication - Google Patents

Capteur d'image couleur sur substrat transparent et procede de fabrication

Info

Publication number
FR2829290B1
FR2829290B1 FR0111335A FR0111335A FR2829290B1 FR 2829290 B1 FR2829290 B1 FR 2829290B1 FR 0111335 A FR0111335 A FR 0111335A FR 0111335 A FR0111335 A FR 0111335A FR 2829290 B1 FR2829290 B1 FR 2829290B1
Authority
FR
France
Prior art keywords
manufacturing
image sensor
color image
transparent substrate
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0111335A
Other languages
English (en)
French (fr)
Other versions
FR2829290A1 (fr
Inventor
Louis Brissot
Eric Pourquier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teledyne e2v Semiconductors SAS
Original Assignee
Atmel Grenoble SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0111335A priority Critical patent/FR2829290B1/fr
Application filed by Atmel Grenoble SA filed Critical Atmel Grenoble SA
Priority to PCT/FR2002/002977 priority patent/WO2003019667A1/fr
Priority to DE60223263T priority patent/DE60223263T2/de
Priority to US10/485,694 priority patent/US6933585B2/en
Priority to JP2003523013A priority patent/JP4147187B2/ja
Priority to CNB028170423A priority patent/CN100487899C/zh
Priority to IL16011302A priority patent/IL160113A0/xx
Priority to KR1020047001560A priority patent/KR100919964B1/ko
Priority to CA2457899A priority patent/CA2457899C/fr
Priority to EP02796331A priority patent/EP1421622B1/fr
Publication of FR2829290A1 publication Critical patent/FR2829290A1/fr
Priority to IL160113A priority patent/IL160113A/en
Application granted granted Critical
Publication of FR2829290B1 publication Critical patent/FR2829290B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
FR0111335A 2001-08-31 2001-08-31 Capteur d'image couleur sur substrat transparent et procede de fabrication Expired - Fee Related FR2829290B1 (fr)

Priority Applications (11)

Application Number Priority Date Filing Date Title
FR0111335A FR2829290B1 (fr) 2001-08-31 2001-08-31 Capteur d'image couleur sur substrat transparent et procede de fabrication
CA2457899A CA2457899C (fr) 2001-08-31 2002-08-30 Capteur d'image couleur sur substrat transparent et procede de fabrication
US10/485,694 US6933585B2 (en) 2001-08-31 2002-08-30 Color image sensor on transparent substrate and method for making same
JP2003523013A JP4147187B2 (ja) 2001-08-31 2002-08-30 透過性基板上のカラー画像センサの製造方法
CNB028170423A CN100487899C (zh) 2001-08-31 2002-08-30 位于透明基片上的彩色图像传感器及其制造方法
IL16011302A IL160113A0 (en) 2001-08-31 2002-08-30 Colour image sensor on transparent substrate and method for making same
PCT/FR2002/002977 WO2003019667A1 (fr) 2001-08-31 2002-08-30 Capteur d'image couleur sur substrat transparent et procede de fabrication
DE60223263T DE60223263T2 (de) 2001-08-31 2002-08-30 Farbbildsensor auf einem transparenten substrat und verfahren zu seiner herstellung
EP02796331A EP1421622B1 (fr) 2001-08-31 2002-08-30 Capteur d'image couleur sur substrat transparent et procede de fabrication
KR1020047001560A KR100919964B1 (ko) 2001-08-31 2002-08-30 투명 기판 상의 컬러 이미지 센서 및 그 제조 방법
IL160113A IL160113A (en) 2001-08-31 2004-01-29 Colour image sensor on transparent substrate and method for making same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0111335A FR2829290B1 (fr) 2001-08-31 2001-08-31 Capteur d'image couleur sur substrat transparent et procede de fabrication

Publications (2)

Publication Number Publication Date
FR2829290A1 FR2829290A1 (fr) 2003-03-07
FR2829290B1 true FR2829290B1 (fr) 2004-09-17

Family

ID=8866878

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0111335A Expired - Fee Related FR2829290B1 (fr) 2001-08-31 2001-08-31 Capteur d'image couleur sur substrat transparent et procede de fabrication

Country Status (10)

Country Link
US (1) US6933585B2 (enExample)
EP (1) EP1421622B1 (enExample)
JP (1) JP4147187B2 (enExample)
KR (1) KR100919964B1 (enExample)
CN (1) CN100487899C (enExample)
CA (1) CA2457899C (enExample)
DE (1) DE60223263T2 (enExample)
FR (1) FR2829290B1 (enExample)
IL (2) IL160113A0 (enExample)
WO (1) WO2003019667A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2863773B1 (fr) * 2003-12-12 2006-05-19 Atmel Grenoble Sa Procede de fabrication de puces electroniques en silicium aminci
JP4486043B2 (ja) * 2004-12-30 2010-06-23 東部エレクトロニクス株式会社 Ｃｍｏｓイメージセンサー及びその製造方法
KR100741920B1 (ko) * 2004-12-30 2007-07-24 동부일렉트로닉스 주식회사 씨모스(ｃｍｏｓ) 이미지 센서의 제조 방법
US8409970B2 (en) * 2005-10-29 2013-04-02 Stats Chippac, Ltd. Semiconductor device and method of making integrated passive devices
US8158510B2 (en) 2009-11-19 2012-04-17 Stats Chippac, Ltd. Semiconductor device and method of forming IPD on molded substrate
US8791006B2 (en) 2005-10-29 2014-07-29 Stats Chippac, Ltd. Semiconductor device and method of forming an inductor on polymer matrix composite substrate
DE102006014247B4 (de) * 2006-03-28 2019-10-24 Robert Bosch Gmbh Bildaufnahmesystem und Verfahren zu dessen Herstellung
US20090174018A1 (en) * 2008-01-09 2009-07-09 Micron Technology, Inc. Construction methods for backside illuminated image sensors
JP5347520B2 (ja) 2009-01-20 2013-11-20 ソニー株式会社 固体撮像装置の製造方法
US8310021B2 (en) * 2010-07-13 2012-11-13 Honeywell International Inc. Neutron detector with wafer-to-wafer bonding
KR20180114927A (ko) * 2016-02-16 2018-10-19 쥐-레이 스위츨란드 에스에이 접합된 경계면들에 걸친 전하 운반을 위한 구조물, 시스템 및 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758734A (en) * 1984-03-13 1988-07-19 Nec Corporation High resolution image sensor array using amorphous photo-diodes
US4976802A (en) * 1989-10-16 1990-12-11 Xerox Corporation Process for assembling smaller scanning or printing arrays together to form a longer array
JPH05183141A (ja) * 1991-07-12 1993-07-23 Fuji Xerox Co Ltd カラーイメージセンサ
US5244817A (en) * 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors
US6059188A (en) * 1993-10-25 2000-05-09 Symbol Technologies Packaged mirror including mirror travel stops
JPH0945886A (ja) * 1995-08-01 1997-02-14 Sharp Corp 増幅型半導体撮像装置
US6204087B1 (en) * 1997-02-07 2001-03-20 University Of Hawai'i Fabrication of three-dimensional architecture for solid state radiation detectors

Also Published As

Publication number Publication date
US20040188792A1 (en) 2004-09-30
CA2457899C (fr) 2012-07-03
DE60223263T2 (de) 2008-08-14
EP1421622B1 (fr) 2007-10-31
DE60223263D1 (de) 2007-12-13
CA2457899A1 (fr) 2003-03-06
KR100919964B1 (ko) 2009-10-01
IL160113A0 (en) 2004-06-20
WO2003019667A1 (fr) 2003-03-06
FR2829290A1 (fr) 2003-03-07
IL160113A (en) 2009-07-20
CN100487899C (zh) 2009-05-13
JP4147187B2 (ja) 2008-09-10
CN1550041A (zh) 2004-11-24
US6933585B2 (en) 2005-08-23
JP2005501420A (ja) 2005-01-13
KR20040047783A (ko) 2004-06-05
EP1421622A1 (fr) 2004-05-26

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Year of fee payment: 15

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Effective date: 20170428