JP4147187B2 - 透過性基板上のカラー画像センサの製造方法 - Google Patents

透過性基板上のカラー画像センサの製造方法 Download PDF

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Publication number
JP4147187B2
JP4147187B2 JP2003523013A JP2003523013A JP4147187B2 JP 4147187 B2 JP4147187 B2 JP 4147187B2 JP 2003523013 A JP2003523013 A JP 2003523013A JP 2003523013 A JP2003523013 A JP 2003523013A JP 4147187 B2 JP4147187 B2 JP 4147187B2
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Japan
Prior art keywords
substrate
wafer
layer
color filter
image sensor
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Expired - Fee Related
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JP2003523013A
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English (en)
Japanese (ja)
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JP2005501420A5 (enExample
JP2005501420A (ja
Inventor
ルイ ブリソ，
エリック プルキエール，
Original Assignee
イー２ブイ セミコンダクターズ
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2003523013A 2001-08-31 2002-08-30 透過性基板上のカラー画像センサの製造方法 Expired - Fee Related JP4147187B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0111335A FR2829290B1 (fr) 2001-08-31 2001-08-31 Capteur d'image couleur sur substrat transparent et procede de fabrication
PCT/FR2002/002977 WO2003019667A1 (fr) 2001-08-31 2002-08-30 Capteur d'image couleur sur substrat transparent et procede de fabrication

Publications (3)

Publication Number Publication Date
JP2005501420A JP2005501420A (ja) 2005-01-13
JP2005501420A5 JP2005501420A5 (enExample) 2007-12-06
JP4147187B2 true JP4147187B2 (ja) 2008-09-10

Family

ID=8866878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003523013A Expired - Fee Related JP4147187B2 (ja) 2001-08-31 2002-08-30 透過性基板上のカラー画像センサの製造方法

Country Status (10)

Country Link
US (1) US6933585B2 (enExample)
EP (1) EP1421622B1 (enExample)
JP (1) JP4147187B2 (enExample)
KR (1) KR100919964B1 (enExample)
CN (1) CN100487899C (enExample)
CA (1) CA2457899C (enExample)
DE (1) DE60223263T2 (enExample)
FR (1) FR2829290B1 (enExample)
IL (2) IL160113A0 (enExample)
WO (1) WO2003019667A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2863773B1 (fr) * 2003-12-12 2006-05-19 Atmel Grenoble Sa Procede de fabrication de puces electroniques en silicium aminci
JP4486043B2 (ja) * 2004-12-30 2010-06-23 東部エレクトロニクス株式会社 Ｃｍｏｓイメージセンサー及びその製造方法
KR100741920B1 (ko) * 2004-12-30 2007-07-24 동부일렉트로닉스 주식회사 씨모스(ｃｍｏｓ) 이미지 센서의 제조 방법
US8409970B2 (en) * 2005-10-29 2013-04-02 Stats Chippac, Ltd. Semiconductor device and method of making integrated passive devices
US8158510B2 (en) 2009-11-19 2012-04-17 Stats Chippac, Ltd. Semiconductor device and method of forming IPD on molded substrate
US8791006B2 (en) 2005-10-29 2014-07-29 Stats Chippac, Ltd. Semiconductor device and method of forming an inductor on polymer matrix composite substrate
DE102006014247B4 (de) * 2006-03-28 2019-10-24 Robert Bosch Gmbh Bildaufnahmesystem und Verfahren zu dessen Herstellung
US20090174018A1 (en) * 2008-01-09 2009-07-09 Micron Technology, Inc. Construction methods for backside illuminated image sensors
JP5347520B2 (ja) 2009-01-20 2013-11-20 ソニー株式会社 固体撮像装置の製造方法
US8310021B2 (en) * 2010-07-13 2012-11-13 Honeywell International Inc. Neutron detector with wafer-to-wafer bonding
KR20180114927A (ko) * 2016-02-16 2018-10-19 쥐-레이 스위츨란드 에스에이 접합된 경계면들에 걸친 전하 운반을 위한 구조물, 시스템 및 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4758734A (en) * 1984-03-13 1988-07-19 Nec Corporation High resolution image sensor array using amorphous photo-diodes
US4976802A (en) * 1989-10-16 1990-12-11 Xerox Corporation Process for assembling smaller scanning or printing arrays together to form a longer array
JPH05183141A (ja) * 1991-07-12 1993-07-23 Fuji Xerox Co Ltd カラーイメージセンサ
US5244817A (en) * 1992-08-03 1993-09-14 Eastman Kodak Company Method of making backside illuminated image sensors
US6059188A (en) * 1993-10-25 2000-05-09 Symbol Technologies Packaged mirror including mirror travel stops
JPH0945886A (ja) * 1995-08-01 1997-02-14 Sharp Corp 増幅型半導体撮像装置
US6204087B1 (en) * 1997-02-07 2001-03-20 University Of Hawai'i Fabrication of three-dimensional architecture for solid state radiation detectors

Also Published As

Publication number Publication date
US20040188792A1 (en) 2004-09-30
CA2457899C (fr) 2012-07-03
DE60223263T2 (de) 2008-08-14
EP1421622B1 (fr) 2007-10-31
FR2829290B1 (fr) 2004-09-17
DE60223263D1 (de) 2007-12-13
CA2457899A1 (fr) 2003-03-06
KR100919964B1 (ko) 2009-10-01
IL160113A0 (en) 2004-06-20
WO2003019667A1 (fr) 2003-03-06
FR2829290A1 (fr) 2003-03-07
IL160113A (en) 2009-07-20
CN100487899C (zh) 2009-05-13
CN1550041A (zh) 2004-11-24
US6933585B2 (en) 2005-08-23
JP2005501420A (ja) 2005-01-13
KR20040047783A (ko) 2004-06-05
EP1421622A1 (fr) 2004-05-26

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