DE60033913D1 - Bildsensor mit reduzierter fet photoempfindlichkeit und durchkontaktierung mit hoher strukturintegrität - Google Patents

Bildsensor mit reduzierter fet photoempfindlichkeit und durchkontaktierung mit hoher strukturintegrität

Info

Publication number
DE60033913D1
DE60033913D1 DE60033913T DE60033913T DE60033913D1 DE 60033913 D1 DE60033913 D1 DE 60033913D1 DE 60033913 T DE60033913 T DE 60033913T DE 60033913 T DE60033913 T DE 60033913T DE 60033913 D1 DE60033913 D1 DE 60033913D1
Authority
DE
Germany
Prior art keywords
contact
image sensor
structural integrity
high structural
photo sensitivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60033913T
Other languages
English (en)
Other versions
DE60033913T2 (de
Inventor
George Edward Possin
Robert Forrest Kwasnick
Ching-Yeu Wei
Douglas Albagli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of DE60033913D1 publication Critical patent/DE60033913D1/de
Publication of DE60033913T2 publication Critical patent/DE60033913T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding

Landscapes

  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE60033913T 1999-11-02 2000-10-19 Bildsensor mit reduzierter fet photoempfindlichkeit und durchkontaktierung mit hoher strukturintegrität Expired - Fee Related DE60033913T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US16304399P 1999-11-02 1999-11-02
US163043P 1999-11-02
US09/643,228 US6396046B1 (en) 1999-11-02 2000-08-22 Imager with reduced FET photoresponse and high integrity contact via
US643228 2000-08-22
PCT/US2000/028905 WO2001033634A1 (en) 1999-11-02 2000-10-19 Imager with reduced fet photoresponse and high integrity contact via

Publications (2)

Publication Number Publication Date
DE60033913D1 true DE60033913D1 (de) 2007-04-26
DE60033913T2 DE60033913T2 (de) 2007-12-06

Family

ID=26859290

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60033913T Expired - Fee Related DE60033913T2 (de) 1999-11-02 2000-10-19 Bildsensor mit reduzierter fet photoempfindlichkeit und durchkontaktierung mit hoher strukturintegrität

Country Status (5)

Country Link
US (1) US6396046B1 (de)
EP (1) EP1145322B1 (de)
JP (1) JP4753516B2 (de)
DE (1) DE60033913T2 (de)
WO (1) WO2001033634A1 (de)

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US7006598B2 (en) * 2002-08-09 2006-02-28 Canon Kabushiki Kaisha Imaging method and apparatus with exposure control
US7148487B2 (en) * 2002-08-27 2006-12-12 Canon Kabushiki Kaisha Image sensing apparatus and method using radiation
KR100956338B1 (ko) * 2002-12-11 2010-05-06 삼성전자주식회사 Ｘ-ｒａｙ 검출기용 박막 트랜지스터 어레이 기판
US7307301B2 (en) * 2002-12-17 2007-12-11 General Electric Company Imaging array
EP1746638A3 (de) * 2002-12-18 2011-03-23 Noble Peak Vision Corp. Halbleiterbauelement mit reduzierten Defekten in einer aktiven Region und Kontaktschema
US7453129B2 (en) * 2002-12-18 2008-11-18 Noble Peak Vision Corp. Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry
US7012314B2 (en) * 2002-12-18 2006-03-14 Agere Systems Inc. Semiconductor devices with reduced active region defects and unique contacting schemes
US20040146138A1 (en) * 2003-01-23 2004-07-29 Motorola, Inc. Large flat panel gallium arsenide arrays on silicon substrate for low dose X-ray digital imaging
US7473903B2 (en) 2003-02-12 2009-01-06 General Electric Company Method and apparatus for deposited hermetic cover for digital X-ray panel
FR2854497B1 (fr) * 2003-04-29 2005-09-02 Commissariat Energie Atomique Procede de realisation d'un dispositif semi-conducteur a metallisations auto-alignees
US7081628B2 (en) * 2003-11-10 2006-07-25 Ge Medical Systems Global Technology Company, Llc Spatially patterned light-blocking layers for radiation imaging detectors
US8053777B2 (en) * 2005-03-31 2011-11-08 General Electric Company Thin film transistors for imaging system and method of making the same
WO2007025485A1 (fr) * 2005-09-01 2007-03-08 Dezheng Tang Detecteur de rayons x et procede de fabrication du detecteur
US7907679B2 (en) 2007-01-12 2011-03-15 General Dynamics C4 Systems, Inc. Methods and systems for acquiring signals using coherent match filtering
US8139680B2 (en) 2007-01-12 2012-03-20 General Dynamics C4 Systems, Inc. Signal acquisition methods and apparatus in wireless communication systems
GB0701076D0 (en) * 2007-01-19 2007-02-28 E2V Tech Uk Ltd Imaging apparatus
TWI347680B (en) * 2007-09-28 2011-08-21 Prime View Int Co Ltd A photo sensor and a method for manufacturing thereof
TWI347682B (en) * 2007-09-28 2011-08-21 Prime View Int Co Ltd A photo sensor and a method for manufacturing thereof
TWI415283B (zh) * 2009-02-18 2013-11-11 Au Optronics Corp Ｘ射線感測器及其製作方法
JP2010245080A (ja) * 2009-04-01 2010-10-28 Epson Imaging Devices Corp 光電変換装置、エックス線撮像装置
JP2010245079A (ja) * 2009-04-01 2010-10-28 Epson Imaging Devices Corp 光電変換装置、エックス線撮像装置
JP2012079820A (ja) * 2010-09-30 2012-04-19 Canon Inc 検出装置及び放射線検出システム
JP5730062B2 (ja) * 2011-02-21 2015-06-03 株式会社ジャパンディスプレイ 表示装置
US9018588B2 (en) 2011-12-30 2015-04-28 Saint-Gobain Ceramics & Plastics, Inc. Radiation detection apparatuses including optical coupling material, and processes of forming the same
KR101965259B1 (ko) * 2012-07-27 2019-08-08 삼성디스플레이 주식회사 엑스선 검출기
TWI505476B (zh) 2012-12-27 2015-10-21 E Ink Holdings Inc 薄膜電晶體結構
US20160013243A1 (en) * 2014-03-10 2016-01-14 Dpix, Llc Photosensor arrays for detection of radiation and process for the preparation thereof
US9786856B2 (en) 2015-08-20 2017-10-10 Dpix, Llc Method of manufacturing an image sensor device
US10261310B2 (en) * 2016-06-27 2019-04-16 Amazon Technologies, Inc. Amorphous silicon layer as optical filter for thin film transistor channel
US9929215B2 (en) 2016-07-12 2018-03-27 Dpix, Llc Method of optimizing an interface for processing of an organic semiconductor
JP7048588B2 (ja) 2016-11-30 2022-04-05 ザ・リサーチ・ファウンデーション・フォー・ザ・ステイト・ユニヴァーシティ・オブ・ニューヨーク ハイブリッド・アクティブマトリクス・フラットパネル検出器システムおよび方法
US10162462B2 (en) 2017-05-01 2018-12-25 Synaptics Incorporated Integrating capacitive sensing with an optical sensor
KR102302593B1 (ko) * 2017-07-13 2021-09-15 삼성전자주식회사 발광 소자, 이를 포함하는 패키지, 및 이의 제조 방법
CN112542486A (zh) * 2019-09-20 2021-03-23 创王光电股份有限公司 显示设备

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US4904056A (en) 1985-07-19 1990-02-27 General Electric Company Light blocking and cell spacing for liquid crystal matrix displays
US4751513A (en) * 1986-05-02 1988-06-14 Rca Corporation Light controlled antennas
US5233181A (en) 1992-06-01 1993-08-03 General Electric Company Photosensitive element with two layer passivation coating
JPH0786632A (ja) * 1993-09-17 1995-03-31 Fuji Xerox Co Ltd 薄膜素子及び薄膜素子の製造方法
US5389775A (en) 1993-12-03 1995-02-14 General Electric Company Imager assembly with multiple common electrode contacts
US5517031A (en) 1994-06-21 1996-05-14 General Electric Company Solid state imager with opaque layer
US5430298A (en) 1994-06-21 1995-07-04 General Electric Company CT array with improved photosensor linearity and reduced crosstalk
US5610403A (en) 1995-09-05 1997-03-11 General Electric Company Solid state radiation imager with gate electrode plane shield wires
JPH0990048A (ja) 1995-09-28 1997-04-04 Canon Inc 放射線検出装置
JPH09275202A (ja) 1996-04-05 1997-10-21 Canon Inc 光検出装置
JPH1093062A (ja) * 1996-09-11 1998-04-10 Toshiba Corp 光検出器
JP3719786B2 (ja) 1996-09-11 2005-11-24 株式会社東芝 光検出器の製造方法
US5838054A (en) * 1996-12-23 1998-11-17 General Electric Company Contact pads for radiation imagers
DE69832761T2 (de) 1997-01-17 2006-11-02 General Electric Co. Korrosionsbeständige bildaufnahmevorrichtung

Also Published As

Publication number Publication date
JP4753516B2 (ja) 2011-08-24
EP1145322B1 (de) 2007-03-14
WO2001033634A1 (en) 2001-05-10
JP2003513472A (ja) 2003-04-08
US6396046B1 (en) 2002-05-28
DE60033913T2 (de) 2007-12-06
EP1145322A1 (de) 2001-10-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee