DE60217213D1 - Methode zur Herstellung einer Fotomaske - Google Patents

Methode zur Herstellung einer Fotomaske

Info

Publication number
DE60217213D1
DE60217213D1 DE60217213T DE60217213T DE60217213D1 DE 60217213 D1 DE60217213 D1 DE 60217213D1 DE 60217213 T DE60217213 T DE 60217213T DE 60217213 T DE60217213 T DE 60217213T DE 60217213 D1 DE60217213 D1 DE 60217213D1
Authority
DE
Germany
Prior art keywords
photomask
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60217213T
Other languages
English (en)
Other versions
DE60217213T2 (de
Inventor
Mari Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Dai Nippon Printing Co Ltd
Original Assignee
Toshiba Corp
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Dai Nippon Printing Co Ltd filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE60217213D1 publication Critical patent/DE60217213D1/de
Publication of DE60217213T2 publication Critical patent/DE60217213T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
DE60217213T 2001-03-29 2002-03-28 Methode zur Herstellung einer Fotomaske Expired - Lifetime DE60217213T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001095971A JP2002296754A (ja) 2001-03-29 2001-03-29 マスクの製造方法
JP2001095971 2001-03-29

Publications (2)

Publication Number Publication Date
DE60217213D1 true DE60217213D1 (de) 2007-02-15
DE60217213T2 DE60217213T2 (de) 2007-10-04

Family

ID=18949957

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60217213T Expired - Lifetime DE60217213T2 (de) 2001-03-29 2002-03-28 Methode zur Herstellung einer Fotomaske

Country Status (7)

Country Link
US (2) US6689625B2 (de)
EP (1) EP1246010B1 (de)
JP (1) JP2002296754A (de)
KR (1) KR100472267B1 (de)
CN (1) CN1215531C (de)
DE (1) DE60217213T2 (de)
TW (1) TW578196B (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4190227B2 (ja) * 2002-07-31 2008-12-03 富士通マイクロエレクトロニクス株式会社 フォトマスク、その設計方法及びそれを用いた半導体装置の製造方法
JP4296943B2 (ja) 2003-01-28 2009-07-15 ソニー株式会社 露光用マスクの製造方法および露光方法ならびに３次元形状の製造方法
JP2004279643A (ja) * 2003-03-14 2004-10-07 Renesas Technology Corp フォトマスクの製造方法
JP4543614B2 (ja) * 2003-03-18 2010-09-15 凸版印刷株式会社 フォトマスクの製造方法および半導体集積回路の製造方法
JP2005258387A (ja) 2003-07-29 2005-09-22 Sony Corp 露光用マスクおよびマスクパターンの製造方法
US20060111886A1 (en) * 2004-11-23 2006-05-25 Mahesh Siddappa Method and system for modeling of a differential bus device
JP4682734B2 (ja) * 2005-07-29 2011-05-11 凸版印刷株式会社 フォトマスクのパターン描画方法
JP5133087B2 (ja) * 2007-02-23 2013-01-30 株式会社ニューフレアテクノロジー 半導体装置の製造方法
CN101271267B (zh) * 2007-03-21 2012-09-19 鸿富锦精密工业（深圳）有限公司 曝光光罩及薄膜图案层的制造方法
JP5242963B2 (ja) * 2007-07-27 2013-07-24 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、パターン寸法のリサイズ装置、荷電粒子ビーム描画方法及びパターン寸法のリサイズ方法
JP4683163B2 (ja) * 2010-10-29 2011-05-11 凸版印刷株式会社 フォトマスクのパターン描画方法
KR101703745B1 (ko) 2010-12-17 2017-02-08 삼성전자 주식회사 캘리브레이션 패턴을 이용한 포토마스크 형성 방법 및 캘리브레이션 패턴을 포함하는 포토마스크
JP2012156441A (ja) 2011-01-28 2012-08-16 Toshiba Corp フレア値算出方法、フレア補正方法、フレア値算出プログラムおよび半導体装置の製造方法
JP6008560B2 (ja) * 2012-04-27 2016-10-19 キヤノン株式会社 補正方法、プログラムおよび情報処理装置
JP5883740B2 (ja) 2012-08-01 2016-03-15 日立オートモティブシステムズ株式会社 熱式空気流量センサ
CN104698761B (zh) * 2013-12-05 2017-06-13 中芯国际集成电路制造(上海)有限公司 基于面积的opc模型校准方法
JP2016082131A (ja) 2014-10-20 2016-05-16 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、荷電粒子ビームを用いた描画方法、および荷電粒子ビーム描画でのショット補正方法
KR101661629B1 (ko) 2016-03-11 2016-09-30 주식회사 베프스 Pzt 무결정 합금 도금액 및 이를 사용한 pzt 무결정 합금 도금방법
JP6575455B2 (ja) * 2016-07-29 2019-09-18 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
TWI690768B (zh) * 2019-01-25 2020-04-11 力晶積成電子製造股份有限公司 光罩的設計方法與半導體微影製程

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4499595A (en) * 1981-10-01 1985-02-12 General Electric Co. System and method for pattern recognition
JPH06138643A (ja) * 1992-10-30 1994-05-20 Toshiba Corp 半導体装置用ガラスマスクおよびその製造方法
JP2975843B2 (ja) * 1994-04-26 1999-11-10 三洋電機株式会社 測長用モニター
JP3406506B2 (ja) * 1997-03-24 2003-05-12 シャープ株式会社 フォトマスクのパターン補正方法およびフォトマスクのパターン補正装置
JP2000020564A (ja) * 1998-06-29 2000-01-21 Mitsubishi Electric Corp レイアウトパターンデータ補正装置、レイアウトパターンデータ補正方法、その補正方法を用いた半導体装置の製造方法、および、半導体装置の製造プログラムを記録した記録媒体
JP2000075467A (ja) 1998-08-31 2000-03-14 Matsushita Electronics Industry Corp フォトマスク及びその製造方法、並びにそのフォトマスクを用いた半導体装置の製造方法
JP2000089448A (ja) * 1998-09-11 2000-03-31 Fujitsu Ltd 露光用パターン表示・検査・修正方法
JP3344347B2 (ja) * 1999-01-14 2002-11-11 日本電気株式会社 近接効果補正方法及びｅｂマスク
US6654488B1 (en) * 1999-07-01 2003-11-25 International Business Machines Corporation Fill pattern inspection
JP2002148779A (ja) * 2000-11-07 2002-05-22 Toshiba Corp マスクパターン補正方法、フォトマスク及びマスクパターン補正方法プログラムを格納したコンピュータ読み取り可能な記録媒体

Also Published As

Publication number Publication date
US6689625B2 (en) 2004-02-10
EP1246010A2 (de) 2002-10-02
EP1246010B1 (de) 2007-01-03
DE60217213T2 (de) 2007-10-04
US20040091797A1 (en) 2004-05-13
US20020142233A1 (en) 2002-10-03
KR100472267B1 (ko) 2005-02-21
CN1379443A (zh) 2002-11-13
CN1215531C (zh) 2005-08-17
TW578196B (en) 2004-03-01
EP1246010A3 (de) 2003-10-22
KR20020077185A (ko) 2002-10-11
JP2002296754A (ja) 2002-10-09

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: INOUE, MARI, TOKYO 105-8001, JP

8364 No opposition during term of opposition