DE60128544D1 - Verfahren zur herstellung einer siliziumschmelze - Google Patents
Verfahren zur herstellung einer siliziumschmelzeInfo
- Publication number
- DE60128544D1 DE60128544D1 DE60128544T DE60128544T DE60128544D1 DE 60128544 D1 DE60128544 D1 DE 60128544D1 DE 60128544 T DE60128544 T DE 60128544T DE 60128544 T DE60128544 T DE 60128544T DE 60128544 D1 DE60128544 D1 DE 60128544D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- silicone melt
- silicone
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US503566 | 2000-02-14 | ||
US09/503,566 US6344083B1 (en) | 2000-02-14 | 2000-02-14 | Process for producing a silicon melt |
PCT/US2001/003460 WO2001061081A1 (en) | 2000-02-14 | 2001-01-31 | Process for producing a silicon melt |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60128544D1 true DE60128544D1 (de) | 2007-07-05 |
DE60128544T2 DE60128544T2 (de) | 2008-01-31 |
Family
ID=24002600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60128544T Expired - Lifetime DE60128544T2 (de) | 2000-02-14 | 2001-01-31 | Verfahren zur herstellung einer siliziumschmelze |
Country Status (7)
Country | Link |
---|---|
US (2) | US6344083B1 (de) |
EP (1) | EP1257697B1 (de) |
JP (1) | JP4335489B2 (de) |
KR (1) | KR100705526B1 (de) |
DE (1) | DE60128544T2 (de) |
TW (1) | TWI228552B (de) |
WO (1) | WO2001061081A1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6749683B2 (en) * | 2000-02-14 | 2004-06-15 | Memc Electronic Materials, Inc. | Process for producing a silicon melt |
US6344083B1 (en) * | 2000-02-14 | 2002-02-05 | Memc Electronic Materials, Inc. | Process for producing a silicon melt |
US6730580B2 (en) * | 2001-07-03 | 2004-05-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Silicon substrate wafer fabrication method employing halogen gettering material and/or plasma annealing |
JPWO2005073439A1 (ja) * | 2004-02-02 | 2007-09-13 | 信越半導体株式会社 | シリコン単結晶及びシリコンウェーハ及びそれらの製造装置並びに製造方法 |
US7465351B2 (en) * | 2004-06-18 | 2008-12-16 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US7691199B2 (en) * | 2004-06-18 | 2010-04-06 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
US7344594B2 (en) * | 2004-06-18 | 2008-03-18 | Memc Electronic Materials, Inc. | Melter assembly and method for charging a crystal forming apparatus with molten source material |
JP5237091B2 (ja) * | 2005-06-02 | 2013-07-17 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 光学結像装置 |
JP4753308B2 (ja) * | 2006-07-13 | 2011-08-24 | Sumco Techxiv株式会社 | 半導体ウェーハ素材の溶解方法及び半導体ウェーハの結晶育成方法 |
US20090120353A1 (en) * | 2007-11-13 | 2009-05-14 | Memc Electronic Materials, Inc. | Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt |
US9945048B2 (en) * | 2012-06-15 | 2018-04-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and method |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615261A (en) | 1969-04-02 | 1971-10-26 | Motorola Inc | Method of producing single semiconductor crystals |
US4249988A (en) * | 1978-03-15 | 1981-02-10 | Western Electric Company, Inc. | Growing crystals from a melt by controlling additions of material thereto |
US4415401A (en) * | 1980-03-10 | 1983-11-15 | Mobil Solar Energy Corporation | Control of atmosphere surrounding crystal growth zone |
US4591409A (en) | 1984-05-03 | 1986-05-27 | Texas Instruments Incorporated | Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth |
JPS61127697A (ja) | 1984-11-20 | 1986-06-14 | Nec Corp | シリコン単結晶の製造方法 |
EP0191111B1 (de) * | 1984-12-28 | 1991-09-18 | International Business Machines Corporation | Züchtungsverfahren und Vorrichtung zur Herstellung von Siliciumkristallen mit hohem und kontrolliertem Kohlenstoffgehalt |
US5373805A (en) * | 1991-10-17 | 1994-12-20 | Shin-Etsu Handotai Co., Ltd. | Single crystal pulling apparatus |
JP2785585B2 (ja) | 1992-04-21 | 1998-08-13 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
US5980629A (en) | 1995-06-14 | 1999-11-09 | Memc Electronic Materials, Inc. | Methods for improving zero dislocation yield of single crystals |
US5976247A (en) | 1995-06-14 | 1999-11-02 | Memc Electronic Materials, Inc. | Surface-treated crucibles for improved zero dislocation performance |
JPH0930889A (ja) * | 1995-07-18 | 1997-02-04 | Komatsu Electron Metals Co Ltd | 半導体単結晶の引上装置 |
US5588993A (en) | 1995-07-25 | 1996-12-31 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
US5676751A (en) * | 1996-01-22 | 1997-10-14 | Memc Electronic Materials, Inc. | Rapid cooling of CZ silicon crystal growth system |
US5814148A (en) * | 1996-02-01 | 1998-09-29 | Memc Electronic Materials, Inc. | Method for preparing molten silicon melt from polycrystalline silicon charge |
US5919303A (en) | 1997-10-16 | 1999-07-06 | Memc Electronic Materials, Inc. | Process for preparing a silicon melt from a polysilicon charge |
US5913975A (en) | 1998-02-03 | 1999-06-22 | Memc Electronic Materials, Inc. | Crucible and method of preparation thereof |
TW508378B (en) | 1998-03-09 | 2002-11-01 | Shinetsu Handotai Kk | A method for producing a silicon single crystal wafer and a silicon single crystal wafer |
US6344083B1 (en) * | 2000-02-14 | 2002-02-05 | Memc Electronic Materials, Inc. | Process for producing a silicon melt |
-
2000
- 2000-02-14 US US09/503,566 patent/US6344083B1/en not_active Expired - Lifetime
-
2001
- 2001-01-31 EP EP01905374A patent/EP1257697B1/de not_active Expired - Lifetime
- 2001-01-31 WO PCT/US2001/003460 patent/WO2001061081A1/en active IP Right Grant
- 2001-01-31 DE DE60128544T patent/DE60128544T2/de not_active Expired - Lifetime
- 2001-01-31 JP JP2001559914A patent/JP4335489B2/ja not_active Expired - Fee Related
- 2001-01-31 KR KR1020027010470A patent/KR100705526B1/ko not_active IP Right Cessation
- 2001-02-27 TW TW090103244A patent/TWI228552B/zh not_active IP Right Cessation
- 2001-08-30 US US09/943,600 patent/US6652645B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE60128544T2 (de) | 2008-01-31 |
US20020020339A1 (en) | 2002-02-21 |
WO2001061081A1 (en) | 2001-08-23 |
JP2003522718A (ja) | 2003-07-29 |
US6652645B2 (en) | 2003-11-25 |
TWI228552B (en) | 2005-03-01 |
KR20020081324A (ko) | 2002-10-26 |
EP1257697B1 (de) | 2007-05-23 |
EP1257697A1 (de) | 2002-11-20 |
JP4335489B2 (ja) | 2009-09-30 |
WO2001061081A9 (en) | 2002-11-07 |
US6344083B1 (en) | 2002-02-05 |
KR100705526B1 (ko) | 2007-04-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |