DE60214805D1 - Referenzgeneratorschaltung und -verfahren für nichtflüchtige Speicheranordnungen - Google Patents
Referenzgeneratorschaltung und -verfahren für nichtflüchtige SpeicheranordnungenInfo
- Publication number
- DE60214805D1 DE60214805D1 DE60214805T DE60214805T DE60214805D1 DE 60214805 D1 DE60214805 D1 DE 60214805D1 DE 60214805 T DE60214805 T DE 60214805T DE 60214805 T DE60214805 T DE 60214805T DE 60214805 D1 DE60214805 D1 DE 60214805D1
- Authority
- DE
- Germany
- Prior art keywords
- nonvolatile memory
- memory devices
- generator circuit
- reference generator
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Control Of Electrical Variables (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/922,016 US6707715B2 (en) | 2001-08-02 | 2001-08-02 | Reference generator circuit and method for nonvolatile memory devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60214805D1 true DE60214805D1 (de) | 2006-11-02 |
Family
ID=25446352
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60214805T Expired - Lifetime DE60214805D1 (de) | 2001-08-02 | 2002-07-31 | Referenzgeneratorschaltung und -verfahren für nichtflüchtige Speicheranordnungen |
Country Status (4)
Country | Link |
---|---|
US (1) | US6707715B2 (de) |
EP (1) | EP1282131B1 (de) |
JP (1) | JP2003109392A (de) |
DE (1) | DE60214805D1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6714458B2 (en) * | 2002-02-11 | 2004-03-30 | Micron Technology, Inc. | High voltage positive and negative two-phase discharge system and method for channel erase in flash memory devices |
US6836434B2 (en) * | 2002-11-21 | 2004-12-28 | Micron Technology, Inc. | Mode selection in a flash memory device |
ITRM20030338A1 (it) * | 2003-07-11 | 2005-01-12 | Micron Technology Inc | Circuito di generazione e regolazione di alta tensione |
US7366030B2 (en) * | 2004-01-29 | 2008-04-29 | Micron Technology, Inc. | Simultaneous read circuit for multiple memory cells |
JP4522217B2 (ja) * | 2004-10-15 | 2010-08-11 | パナソニック株式会社 | 不揮発性半導体メモリ |
US7116597B1 (en) * | 2004-12-30 | 2006-10-03 | Intel Corporation | High precision reference devices and methods |
JP4772363B2 (ja) | 2005-04-12 | 2011-09-14 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7595626B1 (en) * | 2005-05-05 | 2009-09-29 | Sequoia Communications | System for matched and isolated references |
JP4801935B2 (ja) * | 2005-06-08 | 2011-10-26 | 株式会社東芝 | 半導体記憶装置 |
TW200705150A (en) * | 2005-07-22 | 2007-02-01 | Elan Microelectronics Corp | Reference current generating circuit |
US20090092967A1 (en) * | 2006-06-26 | 2009-04-09 | Epoch Biosciences, Inc. | Method for generating target nucleic acid sequences |
US7522002B2 (en) * | 2007-01-04 | 2009-04-21 | Atmel Corporation | Biasing current to speed up current mirror settling time |
US7881118B2 (en) * | 2007-05-25 | 2011-02-01 | Cypress Semiconductor Corporation | Sense transistor protection for memory programming |
EP2308049B1 (de) * | 2008-07-28 | 2012-05-09 | Nxp B.V. | Strommessverstärker mit rückkopplungsschleife |
KR20120011642A (ko) * | 2010-07-29 | 2012-02-08 | 삼성전자주식회사 | 기준 셀을 포함하는 불휘발성 메모리 장치 및 그것의 기준 전류 설정 방법 |
CN108074617A (zh) * | 2016-11-18 | 2018-05-25 | 中芯国际集成电路制造(上海)有限公司 | 一种非易失性存储器 |
US10643677B2 (en) | 2018-06-26 | 2020-05-05 | Sandisk Technologies Llc | Negative kick on bit line control transistors for faster bit line settling during sensing |
US10643713B1 (en) | 2019-02-08 | 2020-05-05 | Sandisk Technologies Llc | Toggling power supply for faster bit line settling during sensing |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4388705A (en) * | 1981-10-01 | 1983-06-14 | Mostek Corporation | Semiconductor memory circuit |
JPH0666115B2 (ja) * | 1983-09-26 | 1994-08-24 | 株式会社東芝 | 半導体記憶装置 |
US5197033A (en) | 1986-07-18 | 1993-03-23 | Hitachi, Ltd. | Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions |
JPS63234622A (ja) | 1987-03-23 | 1988-09-29 | Toshiba Corp | デ−タ出力回路 |
JPH0799639B2 (ja) * | 1987-07-31 | 1995-10-25 | 株式会社東芝 | 半導体集積回路 |
JPH01220295A (ja) * | 1988-02-29 | 1989-09-01 | Nec Corp | 半導体記憶装置 |
US4879682A (en) * | 1988-09-15 | 1989-11-07 | Motorola, Inc. | Sense amplifier precharge control |
US5289412A (en) * | 1992-06-19 | 1994-02-22 | Intel Corporation | High-speed bias-stabilized current-mirror referencing circuit for non-volatile memories |
EP0757356B1 (de) * | 1995-07-31 | 2001-06-06 | STMicroelectronics S.r.l. | Flash-EEPROM mit gesteuerter Entladungszeit der Wortleitungs- und Sourcespannungen nach der Löschung |
KR100205530B1 (ko) * | 1996-04-24 | 1999-07-01 | 윤종용 | 감지 증폭기 |
US5818260A (en) * | 1996-04-24 | 1998-10-06 | National Semiconductor Corporation | Transmission line driver having controllable rise and fall times with variable output low and minimal on/off delay |
US5729493A (en) | 1996-08-23 | 1998-03-17 | Motorola Inc. | Memory suitable for operation at low power supply voltages and sense amplifier therefor |
IT1286072B1 (it) | 1996-10-31 | 1998-07-07 | Sgs Thomson Microelectronics | Equalizzatore autoregolato,in particolare per amplificatore di rilevamento,o sense amplifier |
JP3039458B2 (ja) * | 1997-07-07 | 2000-05-08 | 日本電気株式会社 | 不揮発性半導体メモリ |
US6490200B2 (en) | 2000-03-27 | 2002-12-03 | Sandisk Corporation | Non-volatile memory with improved sensing and method therefor |
DE19944037C1 (de) * | 1999-09-14 | 2001-01-25 | Infineon Technologies Ag | Integrierter Speicher mit Speicherzellen und Referenzzellen |
FR2801719B1 (fr) * | 1999-11-30 | 2002-03-01 | St Microelectronics Sa | Dispositif de lecture pour memoire en circuit integre |
US6226213B1 (en) * | 2000-01-31 | 2001-05-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reference cell array to generate the reference current for sense amplifier |
US6310810B1 (en) * | 2000-07-14 | 2001-10-30 | Raj Kumar Jain | High-speed sense amplifier |
US6438032B1 (en) | 2001-03-27 | 2002-08-20 | Micron Telecommunications, Inc. | Non-volatile memory with peak current noise reduction |
-
2001
- 2001-08-02 US US09/922,016 patent/US6707715B2/en not_active Expired - Lifetime
-
2002
- 2002-07-31 EP EP02255341A patent/EP1282131B1/de not_active Expired - Lifetime
- 2002-07-31 DE DE60214805T patent/DE60214805D1/de not_active Expired - Lifetime
- 2002-08-02 JP JP2002226102A patent/JP2003109392A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2003109392A (ja) | 2003-04-11 |
EP1282131A3 (de) | 2004-09-29 |
EP1282131B1 (de) | 2006-09-20 |
US20030026133A1 (en) | 2003-02-06 |
US6707715B2 (en) | 2004-03-16 |
EP1282131A2 (de) | 2003-02-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60214805D1 (de) | Referenzgeneratorschaltung und -verfahren für nichtflüchtige Speicheranordnungen | |
DE60227624D1 (de) | Testverfahren für Halbleiter-Speicherschaltung | |
DE69904320D1 (de) | On-chip schaltung und verfahren zur speicherschaltungs-prüfung | |
DE60105873D1 (de) | Halbleiterspeicherherstellungssystem und -verfahren | |
DE69942640D1 (de) | Halbleiterspeichervorrichtung und Speicherverfahren dafür | |
DE69939717D1 (de) | Speicherschaltung | |
DE60213560D1 (de) | Halbleiterspeicher | |
DE60210416D1 (de) | Speicherkarte | |
DE60221328D1 (de) | Speicherkarte | |
DE60219990D1 (de) | Speichertest-Schaltung | |
DE60212272D1 (de) | Leseverstärkersteuerschaltung und -verfahren für nichtflüchtige Speicheranordnung | |
DE69930586D1 (de) | Integrierte Halbleiterspeicherschaltung | |
DE60317381D1 (de) | Halbleiterspeicher | |
DE60125910D1 (de) | Halbleiterspeicher und Auswahlverfahren für mehrere Wortleitungen | |
DE60336787D1 (de) | Halbleiterspeicher | |
DE60216543D1 (de) | Sektorschutzschaltung und -verfahren für Flash-Speicheranordnungen | |
DE60305752D1 (de) | SpeicherKarte | |
DE60218009D1 (de) | Halbleiterspeichervorrichtung | |
NO20053443L (no) | Innretning og fremgangsmate for fremstilling av isolasjonselementer | |
DE60336614D1 (de) | Redundanz -Schaltung und -Verfahren für Halbleiterspeicher | |
DE60229712D1 (de) | Halbleiterspeicher | |
DE60141200D1 (de) | Halbleiterspeichersystem | |
DE60308076D1 (de) | Einbrennsystem und -verfahren für verbesserte Speicherzuverlässigkeit | |
DE60316647D1 (de) | Halbleiterspeichereinrichtung und Prüfungsverfahren | |
DE60322772D1 (de) | Spannungsdetektionsschaltung und -Verfahren für Halbleiterspeicheranordnungen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8332 | No legal effect for de |