DE60212344T2 - Mittels elektroabsorption modulierter laser mit asymmetrischem wellenleiter - Google Patents

Mittels elektroabsorption modulierter laser mit asymmetrischem wellenleiter Download PDF

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Publication number
DE60212344T2
DE60212344T2 DE60212344T DE60212344T DE60212344T2 DE 60212344 T2 DE60212344 T2 DE 60212344T2 DE 60212344 T DE60212344 T DE 60212344T DE 60212344 T DE60212344 T DE 60212344T DE 60212344 T2 DE60212344 T2 DE 60212344T2
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DE
Germany
Prior art keywords
waveguide
light
mode
laser device
modulated laser
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60212344T
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German (de)
English (en)
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DE60212344D1 (de
Inventor
R. Stephen Princeton FORREST
R. Milind Princeton GOKHALE
V. Pavel Monmouth Junction STUDENKOV
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Princeton University
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Princeton University
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Publication date
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Publication of DE60212344D1 publication Critical patent/DE60212344D1/de
Application granted granted Critical
Publication of DE60212344T2 publication Critical patent/DE60212344T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
DE60212344T 2001-01-19 2002-01-18 Mittels elektroabsorption modulierter laser mit asymmetrischem wellenleiter Expired - Fee Related DE60212344T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US26286301P 2001-01-19 2001-01-19
US262863P 2001-01-19
US891639 2001-06-26
US09/891,639 US6483863B2 (en) 2001-01-19 2001-06-26 Asymmetric waveguide electroabsorption-modulated laser
PCT/US2002/001348 WO2002058251A2 (en) 2001-01-19 2002-01-18 Asymmetric waveguide electroabsorption-modulated laser

Publications (2)

Publication Number Publication Date
DE60212344D1 DE60212344D1 (de) 2006-07-27
DE60212344T2 true DE60212344T2 (de) 2007-05-10

Family

ID=26949512

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60212344T Expired - Fee Related DE60212344T2 (de) 2001-01-19 2002-01-18 Mittels elektroabsorption modulierter laser mit asymmetrischem wellenleiter

Country Status (10)

Country Link
US (1) US6483863B2 (enExample)
EP (1) EP1368870B1 (enExample)
JP (1) JP2004523113A (enExample)
KR (1) KR20030093199A (enExample)
CN (1) CN1547791A (enExample)
AT (1) ATE330346T1 (enExample)
AU (1) AU2002245278A1 (enExample)
CA (1) CA2435330A1 (enExample)
DE (1) DE60212344T2 (enExample)
WO (1) WO2002058251A2 (enExample)

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US7826693B2 (en) 2006-10-26 2010-11-02 The Trustees Of Princeton University Monolithically integrated reconfigurable optical add-drop multiplexer

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US7826693B2 (en) 2006-10-26 2010-11-02 The Trustees Of Princeton University Monolithically integrated reconfigurable optical add-drop multiplexer

Also Published As

Publication number Publication date
DE60212344D1 (de) 2006-07-27
EP1368870B1 (en) 2006-06-14
CN1547791A (zh) 2004-11-17
AU2002245278A1 (en) 2002-07-30
WO2002058251A3 (en) 2002-10-10
EP1368870A2 (en) 2003-12-10
ATE330346T1 (de) 2006-07-15
KR20030093199A (ko) 2003-12-06
JP2004523113A (ja) 2004-07-29
US6483863B2 (en) 2002-11-19
CA2435330A1 (en) 2002-07-25
US20020097941A1 (en) 2002-07-25
EP1368870A4 (en) 2005-10-05
WO2002058251A2 (en) 2002-07-25

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