JP2004523113A - 非対称導波路電界吸収型変調レーザ - Google Patents

非対称導波路電界吸収型変調レーザ Download PDF

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Publication number
JP2004523113A
JP2004523113A JP2002558622A JP2002558622A JP2004523113A JP 2004523113 A JP2004523113 A JP 2004523113A JP 2002558622 A JP2002558622 A JP 2002558622A JP 2002558622 A JP2002558622 A JP 2002558622A JP 2004523113 A JP2004523113 A JP 2004523113A
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waveguide
laser device
doped region
light
region
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JP2002558622A
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Japanese (ja)
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JP2004523113A5 (enExample
Inventor
フォーレスト，スティーヴン・アール
ゴクヘイル，ミリンド・アール
スチュデンコフ，パヴェル・ブイ
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ザ トラスティーズ オブ プリンストン ユニバーシテイ
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Publication of JP2004523113A publication Critical patent/JP2004523113A/ja
Publication of JP2004523113A5 publication Critical patent/JP2004523113A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
JP2002558622A 2001-01-19 2002-01-18 非対称導波路電界吸収型変調レーザ Pending JP2004523113A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26286301P 2001-01-19 2001-01-19
US09/891,639 US6483863B2 (en) 2001-01-19 2001-06-26 Asymmetric waveguide electroabsorption-modulated laser
PCT/US2002/001348 WO2002058251A2 (en) 2001-01-19 2002-01-18 Asymmetric waveguide electroabsorption-modulated laser

Publications (2)

Publication Number Publication Date
JP2004523113A true JP2004523113A (ja) 2004-07-29
JP2004523113A5 JP2004523113A5 (enExample) 2005-12-22

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JP2002558622A Pending JP2004523113A (ja) 2001-01-19 2002-01-18 非対称導波路電界吸収型変調レーザ

Country Status (10)

Country Link
US (1) US6483863B2 (enExample)
EP (1) EP1368870B1 (enExample)
JP (1) JP2004523113A (enExample)
KR (1) KR20030093199A (enExample)
CN (1) CN1547791A (enExample)
AT (1) ATE330346T1 (enExample)
AU (1) AU2002245278A1 (enExample)
CA (1) CA2435330A1 (enExample)
DE (1) DE60212344T2 (enExample)
WO (1) WO2002058251A2 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012517030A (ja) * 2009-03-31 2012-07-26 インテル コーポレイション 狭小表面波形格子
JP2015122352A (ja) * 2013-12-20 2015-07-02 三菱電機株式会社 波長可変光源、波長可変光源モジュール、および光集積素子
JP2015184528A (ja) * 2014-03-25 2015-10-22 日本電気株式会社 光集積回路とその製造方法
US11262605B2 (en) * 2017-08-31 2022-03-01 Lightwave Logic Inc. Active region-less polymer modulator integrated on a common PIC platform and method
CN114966963A (zh) * 2021-02-26 2022-08-30 效能光子私人有限责任公司 光电系统及其磷化铟基单片光子集成电路
JP2023121105A (ja) * 2022-02-18 2023-08-30 ネクサス・フォトニクス・インコーポレイテッド 誘電体導波路に対する光結合を改善したｇａａｓ集積能動デバイス
JP2024059884A (ja) * 2020-07-01 2024-05-01 オーロラ・オペレイションズ・インコーポレイティッド 半導体レーザーおよび光増幅器フォトニックパッケージ
JP7724159B2 (ja) 2019-05-28 2025-08-15 シエナ コーポレーション モノリシック集積利得素子

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CN104204880A (zh) * 2012-03-30 2014-12-10 富士通株式会社 光元件、光发送元件、光接收元件、混合波导激光器、光发送装置
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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012517030A (ja) * 2009-03-31 2012-07-26 インテル コーポレイション 狭小表面波形格子
JP2015122352A (ja) * 2013-12-20 2015-07-02 三菱電機株式会社 波長可変光源、波長可変光源モジュール、および光集積素子
JP2015184528A (ja) * 2014-03-25 2015-10-22 日本電気株式会社 光集積回路とその製造方法
US11262605B2 (en) * 2017-08-31 2022-03-01 Lightwave Logic Inc. Active region-less polymer modulator integrated on a common PIC platform and method
JP7724159B2 (ja) 2019-05-28 2025-08-15 シエナ コーポレーション モノリシック集積利得素子
JP7705500B2 (ja) 2020-07-01 2025-07-09 オーロラ・オペレイションズ・インコーポレイティッド Ｌｉｄａｒ装置、自律走行車両制御システム、および自律走行車両
JP2024059884A (ja) * 2020-07-01 2024-05-01 オーロラ・オペレイションズ・インコーポレイティッド 半導体レーザーおよび光増幅器フォトニックパッケージ
JP7445359B2 (ja) 2021-02-26 2024-03-07 エフェクト フォトニクス ベーハー モノリシックフォトニック集積回路およびこれを備える光電子システム
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JP2022132174A (ja) * 2021-02-26 2022-09-07 エフェクト フォトニクス ベーハー モノリシックフォトニック集積回路およびこれを備える光電子システム
CN114966963A (zh) * 2021-02-26 2022-08-30 效能光子私人有限责任公司 光电系统及其磷化铟基单片光子集成电路
JP7440567B2 (ja) 2022-02-18 2024-02-28 ネクサス・フォトニクス・インコーポレイテッド 誘電体導波路に対する光結合を改善したｇａａｓ集積能動デバイス
JP2023121105A (ja) * 2022-02-18 2023-08-30 ネクサス・フォトニクス・インコーポレイテッド 誘電体導波路に対する光結合を改善したｇａａｓ集積能動デバイス

Also Published As

Publication number Publication date
DE60212344D1 (de) 2006-07-27
EP1368870B1 (en) 2006-06-14
CN1547791A (zh) 2004-11-17
AU2002245278A1 (en) 2002-07-30
WO2002058251A3 (en) 2002-10-10
EP1368870A2 (en) 2003-12-10
DE60212344T2 (de) 2007-05-10
ATE330346T1 (de) 2006-07-15
KR20030093199A (ko) 2003-12-06
US6483863B2 (en) 2002-11-19
CA2435330A1 (en) 2002-07-25
US20020097941A1 (en) 2002-07-25
EP1368870A4 (en) 2005-10-05
WO2002058251A2 (en) 2002-07-25

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